AP9T18GEJ [A-POWER]
G-S Diode embedded, Capable of 2.5V gate drive; 摹-S嵌入式二极管,有能力2.5V栅极驱动型号: | AP9T18GEJ |
厂家: | ADVANCED POWER ELECTRONICS CORP. |
描述: | G-S Diode embedded, Capable of 2.5V gate drive |
文件: | 总4页 (文件大小:132K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AP9T18GEH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ G-S Diode embedded
BVDSS
RDS(ON)
ID
20V
14mΩ
40A
G
▼ Capable of 2.5V gate drive
▼ Surface mount package
▼ RoHS Compliant
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
D
S
TO-252(H)
G
D
TO-251(J)
S
Absolute Maximum Ratings
Symbol
Parameter
Drain-Source Voltage
Gate-Source Voltage
Rating
20
Units
V
VDS
VGS
±12
V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
40
A
25
A
160
A
PD@TC=25℃
Total Power Dissipation
31
W
Linear Derating Factor
0.25
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
4
Rthj-a
110
Data and specifications subject to change without notice
200523061-1/4
AP9T18GEH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
20
-
-
0.02
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
V/℃
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
GS=2.5V, ID=10A
-
14
V
-
0.4
-
-
-
28
mΩ
V
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=5V, ID=20A
VDS=20V, VGS=0V
VDS=16V ,VGS=0V
VGS=±12V
1.5
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
20
-
-
S
IDSS
uA
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
-
1
-
-
25
IGSS
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
-
±30
Qg
ID=20A
-
16
2
26
-
Qgs
Qgd
td(on)
tr
VDS=16V
-
VGS=4.5V
-
6
-
VDS=10V
-
8
-
ID=20A
-
84
19
14
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=1.0Ω,VGS=5V
RD=0.5Ω
-
-
-
-
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V
-
1080 1730
VDS=20V
-
205
145
3.6
-
-
f=1.0MHz
-
f=1.0MHz
-
5.4
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=20A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.2
V
26
19
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP9T18GEH/J
120
100
80
60
40
20
0
90
80
70
60
50
40
30
20
10
0
T C = 150 o
C
5.0V
4.5V
3.5V
T C =25 o
C
5.0V
4.5V
3.5V
2.5V
2.5V
V G =1.5V
V G =1.5V
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
40
30
20
10
1.6
1.4
1.2
1.0
0.8
0.6
I D =20A
I D = 10 A
T
C =25 o
C
V
G =4.5V
Ω
1
1.5
2
2.5
3
3.5
4
4.5
25
50
75
100
125
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
16
12
8
40.0
30.0
20.0
10.0
0.0
V
GS =2.5V
T j =150 o
C
T j =25 o
C
V GS =4.5V
4
0
0
0.2
0.4
0.6
0.8
1
1.2
0
10
20
30
40
50
60
70
V SD , Source-to-Drain Voltage (V)
I D , Drain Current (A)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. On-Resistance vs.
Drain Current
3/4
AP9T18GEH/J
f=1.0MHz
14
10000
1000
100
12
I D =20A
V DS =10V
10
8
V
V
DS =12V
DS =16V
C iss
6
4
2
C oss
C rss
0
0
10
20
30
40
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
10
1
Duty factor=0.5
0.2
0.1
100us
0.1
0.05
PDM
0.02
t
T
1ms
10ms
100ms
1s
0.01
Duty factor = t/T
Single Pulse
Peak Tj = PDM x Rthjc + TC
DC
0.01
1
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
80
60
40
20
0
V DS =5V
T j =25 o
C
T j =150 o
C
QG
4.5V
QGS
QGD
Q
Charge
0
1
2
3
4
5
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
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