APT30M61BLL [ADPOW]

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.; 功率MOS 7TM是新一代低损耗，高电压，N沟道增强型功率MOSFET 。


型号：	APT30M61BLL
厂家：	ADVANCED POWER TECHNOLOGY
描述：	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 功率MOS 7TM是新一代低损耗，高电压，N沟道增强型功率MOSFET 。晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总2页 (文件大小：73K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

APT30M61BLL

APT30M61SLL

300V 54A 0.061W

BLL

POWER MOS 7

Power MOS 7^TMis a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7^TMby significantly lowering R_DS(ON)

and Q_g. Power MOS 7^TMcombines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

D³PAK

TO-247

SLL

• Lower Input Capacitance

• Lower Miller Capacitance

• Lower Gate Charge, Qg

• IncreasedPowerDissipation

• Easier To Drive

• TO-247 or Surface Mount D³PAK Package

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT30M61

300

UNIT

V_DSS

I_D

Drain-Source Voltage

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

216

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

±30

±40

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

Watts

W/°C

400

P_D

3.20

-55 to 150

300

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

1300

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

300

TYP

MAX

UNIT

BV_DSS

I_D(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

On State Drain Current

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

Amps

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, 0.5 I_D[Cont.])

Ohms

µA

0.061

100

500

±100

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

I_DSS

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 1mA)

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA

405 S.W. Columbia Street

Chemin de Magret

Bend, Oregon 97702-1035

F-33700 Merignac - France

Phone: (541) 382-8028

Phone: (33) 5 57 92 15 15

FAX: (541) 388-0364

FAX: (33) 5 56 47 97 61

EUROPE

DYNAMIC CHARACTERISTICS

Symbol Characteristic

APT30M61 BLL - SLL

MIN

TYP

MAX

UNIT

TestConditions

C_iss

C_oss

C_rss

Q_g

InputCapacitance

3830

910

V_GS= 0V

V_DS= 25V

f = 1 MHz

OutputCapacitance

Reverse Transfer Capacitance

_GS= 10V

Total Gate Charge

V_DD= 0.5 V_DSS

Q_gs

Q_gd

t_d(on)

t_r

Gate-SourceCharge

Gate-Drain("Miller")Charge

Turn-onDelayTime

Rise Time

I_D= I_D[Cont.]@ 25°C

V_GS= 15V

V_DD= 0.5 V_DSS

I_D= I_D[Cont.]@ 25°C

R_G= 0.6W

t_d(off)

t_f

Turn-offDelayTime

FallTime

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I_S

MIN

TYP

MAX

Characteristic / Test Conditions

UNIT

Continuous Source Current (Body Diode)

Amps

I_SM

216

1.3

Pulsed Source Current

(Body Diode)

V_SD

t _rr

Diode Forward Voltage (V_GS= 0V, I_S= -I_D[Cont.])

Volts

Reverse Recovery Time (I_S= -I_D[Cont.], dl_S/dt = 100A/µs)

440

5.8

Q _rr

Reverse Recovery Charge (I_S= -I_D[Cont.], dl_S/dt = 100A/µs)

µC

Peak Diode Recovery ^dv

V/ns

THERMAL CHARACTERISTICS

Symbol Characteristic

MIN

TYP

MAX

0.31

UNIT

R_qJC

R_qJA

Junction to Case

°C/W

JunctiontoAmbient

Repetitive Rating: Pulse width limited by maximum junction

temperature.

SeeMIL-STD-750Method3471

Starting T = +25°C, L = 0.89mH, R = 25W, Peak I = 54A

Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

numbers reflect the limitations of the test circuit rather than the

device itself.

£ -I

£ 700A/µs

V_R£ V

T £ 150°C

D Cont.

[

DSS

]

APT Reserves the right to change, without notice, the specifications and information contained herein.

D³PAKPackageOutline

TO-247 Package Outline

4.98 (.196)

5.08 (.200)

1.47 (.058)

1.57 (.062)

4.69 (.185)

5.31 (.209)

15.95 (.628)

16.05 (.632)

13.41 (.528)

13.51 (.532)

15.49 (.610)

16.26 (.640)

1.04 (.041)

1.15 (.045)

1.49 (.059)

2.49 (.098)

5.38 (.212)

6.20 (.244)

6.15 (.242) BSC

Revised

8/29/97

11.51 (.453)

11.61 (.457)

13.79 (.543)

13.99 (.551)

Revised

4/18/95

20.80 (.819)

21.46 (.845)

3.50 (.138)

3.81 (.150)

0.46 (.018)

0.56 (.022)

{3 Plcs}

1.27 (.050)

1.40 (.055)

0.020 (.001)

0.178 (.007)

2.87 (.113)

3.12 (.123)

3.81 (.150)

4.50 (.177) Max.

1.98 (.078)

2.08 (.082)

4.06 (.160)

2.67 (.105)

2.84 (.112)

(Base of Lead)

1.65 (.065)

2.13 (.084)

1.22 (.048)

1.32 (.052)

0.40 (.016)

0.79 (.031)

19.81 (.780)

20.32 (.800)

Heat Sink (Drain)

and Leads

are Plated

5.45 (.215) BSC

{2 Plcs.}

1.01 (.040)

1.40 (.055)

Gate

Drain

Source

Drain

Gate

Dimensions in Millimeters (Inches)

2.21 (.087)

2.59 (.102)

5.45 (.215) BSC

2-Plcs.

Dimensions in Millimeters and (Inches)

APT'sdevicesarecoveredbyoneormoreofthefollowingU.S.patents:

4,895,810

5,256,583

5,045,903

4,748,103

5,089,434

5,283,202

5,182,234

5,231,474

5,019,522

5,434,095

5,262,336

5,528,058

APT30M61BLL [ADPOW]

相关型号：

APT30M61BLLG

APT30M61BLL_04

APT30M61SFLL

APT30M61SFLLG

APT30M61SLL

APT30M61SLLG

APT30M70BVFR

APT30M70BVFRG

APT30M70BVR

APT30M70BVR

APT30M70BVRG

APT30M70SVR