APT45GP120JDQ2 [ADPOW]
POWER MOS 7 IGBT; 功率MOS 7 IGBT
| 型号： | APT45GP120JDQ2 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | POWER MOS 7 IGBT |
| 文件： | 总9页 (文件大小：457K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1200V
APT45GP120JDQ2
®
E
E
®
POWER MOS 7 IGBT
7
2
2
-
C
G
T
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
O
S
"UL Recognized"
file # E145592
ISOTOP®
• Low Conduction Loss
• Low Gate Charge
• 100 kHz operation @ 800V, 16A
• 50 kHz operation @ 800V, 30A
• RBSOA Rated
C
E
• Ultrafast Tail Current shutoff
G
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Parameter
Symbol
UNIT
APT45GP120JDQ2
VCES
VGE
IC1
Collector-Emitter Voltage
1200
Volts
±30
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
75
Continuous Collector Current @ TC = 110°C
IC2
34
Amps
1
Pulsed Collector Current
@ TC = 150°C
ICM
170
Reverse Biad Safe Operating Area @ TJ = 150°C
170A @ 960V
329
RBSOA
PD
Total Power Dissipation
Watts
°C
Operating and Storage Junction Temperature Range
TJ,TSTG
-55 to 150
300
TL
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
Units
V(BR)CES
VGE(TH)
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 750µA)
Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 45A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 45A, Tj = 125°C)
1200
3
4.5
3.3
3.0
6
Volts
3.9
VCE(ON)
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
750
ICES
IGES
µA
nA
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V)
3000
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT45GP120JDQ2
UNIT
Test Conditions
Capacitance
MIN
TYP
MAX
Cies
3995
300
55
Input Capacitance
Coes
pF
V
Output Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Cres
Reverse Transfer Capacitance
VGEP
7.5
185
25
Gate-to-Emitter Plateau Voltage
Gate Charge
VGE = 15V
VCE = 600V
IC = 45A
3
Qg
Total Gate Charge
Qge
nC
Gate-Emitter Charge
Qgc
80
Gate-Collector ("Miller") Charge
TJ = 150°C, RG = 5Ω, VGE
=
Reverse Bias Safe Operating Area
RBSOA
td(on)
A
170
15V, L = 100µH,VCE = 960V
Inductive Switching (25°C)
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
18
29
VCC = 600V
VGE = 15V
IC = 45A
tr
ns
td(off)
100
38
tf
RG = 5Ω
4
Eon1
Eon2
Turn-on Switching Energy
900
1870
905
18
TJ = +25°C
5
µJ
ns
Turn-on Switching Energy (Diode)
6
Eoff
Turn-off Switching Energy
td(on)
Inductive Switching (125°C)
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
tr
VCC = 600V
VGE = 15V
IC = 45A
29
td(off)
tf
150
80
Current Fall Time
RG = 5Ω
4 4
Eon1
Eon2
Eoff
Turn-on Switching Energy
900
3080
2255
TJ = +125°C
55
µJ
Turn-on Switching Energy (Diode)
6
Turn-off Switching Energy
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
UNIT
MIN
TYP
MAX
.38
R
Junction to Case (IGBT)
Junction to Case (DIODE)
θJC
θJC
°C/W
R
1.10
gm
WT
VIsolation
Package Weight
29.2
RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
Volts
2500
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction temperature.
For Combi devices, Ices includes both IGBT and FRED leakages
See MIL-STD-750 Method 3471.
Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5
6
Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
APT45GP120JDQ2
90
90
80
70
60
50
40
30
20
10
0
80
70
60
50
TJ = 25°C
TJ = 25°C
TJ = 125°C
40
TJ = 125°C
30
20
10
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
, COLLECTER-TO-EMITTER VOLTAGE (V)
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
V
CE
CE
FIGURE 1, Output Characteristics(T = 25°C)
FIGURE 2, Output Characteristics (T = 125°C)
J
J
160
16
14
12
250µs PULSE
TEST<0.5 % DUTY
CYCLE
I
T
= 45A
= 25°C
C
J
140
120
100
80
V
= 240V
CE
TJ = -55°C
V
= 600V
CE
10
8
V
= 960V
TJ = 25°C
CE
6
60
4
40
TJ = 125°C
2
20
0
0
0
1
2
3
4
5
6
7
8
9
10
0
20 40 60 80 100 120 140 160 180 200
GATE CHARGE (nC)
V
, GATE-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
5
4
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
= 90A
C
I
= 90A
C
I
= 45A
C
I
= 45A
C
3
2
I
= 22.5A
C
I
= 22.5A
C
1
0
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
.05
0
6
8
10
12
14
16
0
25
50
75
100
125
V
, GATE-TO-EMITTER VOLTAGE (V)
T , Junction Temperature (°C)
GE
J
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
1.20
120
1.15
1.10
1.05
1.00
0.95
0.90
100
80
60
40
20
0
0.85
0.80
-50 -25
0
25
50
75
100 125
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
APT45GP120JDQ2
180
160
140
120
100
80
25
20
15
10
5
V
= 15V
GE
VGE =15V,TJ=125°C
VGE =15V,TJ=25°C
60
40
VCE = 600V
VCE = 600V
RG = 5Ω
L = 100 µH
TJ = 25°C, TJ =125°C
RG = 5Ω
20
L = 100 µH
0
I
0
I
0
20
40
60
80
100
0
20
40
60
80
100
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
80
100
RG = 5Ω, L = 100µH, VCE = 600V
R
G = 5Ω, L = 100 H, VCE = 600V
µ
70
60
50
40
30
20
10
80
60
40
20
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
TJ = 25 or 125°C,VGE = 15V
0
I
0
I
0
20
40
60
80
100
0
20
40
60
80
100
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
8000
7000
6000
5000
4000
3000
2000
6000
5000
4000
3000
2000
V
V
R
=
=
= 5Ω
600V
+15V
V
V
R
=
=
= 5Ω
600V
+15V
CE
GE
CE
GE
G
G
T
J = 125°C, VGE = 15V
T
J = 125°C,VGE =15V
1000
0
1000
0
T
J = 25°C, VGE = 15V
T
J = 25°C,VGE =15V
40 60
0
20
80
100
0
20
40
60
80
100
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
12000
8000
V
V
T
=
=
600V
+15V
V
V
R
=
=
= 5Ω
600V
+15V
CE
GE
CE
GE
E
90A
on2,
= 125°C
7000
6000
5000
4000
3000
2000
1000
0
J
G
10000
8000
6000
4000
2000
0
E
E
90A
45A
E
90A
on2,
off,
E
90A
off,
on2
,
E
45A
off,
E
45A
on2
,
E
45A
off,
E
22.5A
E
22.5A
on2
,
on2
,
E
22.5A
off,
E
22.5A
off,
0
10
20
30
40
50
0
25
50
75
100
125
R , GATE RESISTANCE (OHMS)
T , JUNCTION TEMPERATURE (°C)
G
J
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
APT45GP120JDQ2
10,000
180
160
140
120
100
80
Cies
1,000
100
10
Coes
60
Cres
40
20
0
0
10
20
30
40
50
0
100 200 300 400 500 600 700 800 900 1000
V , COLLECTOR TO EMITTER VOLTAGE
CE
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
CE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18,Minimim Reverse Bias Safe Operating Area
0.40
0.9
0.35
0.30
0.7
0.25
0.5
0.20
Note:
0.15
0.10
0.05
0
0.3
t
1
t
2
0.1
t
SINGLE PULSE
1
t
Duty Factor D =
/
2
0.05
Peak T = P
x Z
+ T
C
J
DM
θJC
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
90
50
RC MODEL
0.0339
Junction
temp. (°C)
0.0004
0.0269
0.608
Fmax = min (fmax, fmax2
)
10
5
0.05
fmax1
=
=
Power
(watts)
0.0806
0.265
td(on) + tr + td(off) + tf
Pdiss - Pcond
Eon2 + Eoff
fmax2
T
T
=
125°C
75°C
J
=
C
D = 50 %
TJ - TC
RθJC
V
R
=
= 5Ω
800V
Pdiss
=
CE
Case temperature. (°C)
G
1
10
20
30
40
50
60
70
I , COLLECTOR CURRENT (A)
C
Figure 20, Operating Frequency vs Collector Current
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
APT45GP120JDQ2
APT30DQ120
10%
TJ = 125 °C
Gate Voltage
Collector Voltage
td(on)
VCE
IC
VCC
tr
90%
10%
5 %
A
5%
Collector Current
D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
VTEST
*DRIVER SAME TYPE AS D.U.T.
90%
Gate Voltage
A
TJ = 125 °C
td(off)
tf
VCE
Collector Voltage
90%
IC
100uH
VCLAMP
B
A
0
10%
Switching
Energy
Collector Current
D.U.T.
DRIVER*
Figure 24, E
Test Circuit
Figure 23, Turn-off Switching Waveforms and Definitions
ON1
TYPICAL PERFORMANCE CURVES
APT45GP120JDQ2
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Symbol
IF(AV)
Characteristic / Test Conditions
APT45GP120JDQ2
UNIT
Maximum Average Forward Current (TC = 100°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
26
37
IF(RMS)
Amps
IFSM
210
STATIC ELECTRICAL CHARACTERISTICS
Symbol
UNIT
Characteristic / Test Conditions
MIN
TYP
MAX
IF = 45A
2.9
Volts
Forward Voltage
IF = 90A
VF
3.56
2.28
IF = 40A, TJ = 125°C
DYNAMIC CHARACTERISTICS
Characteristic
Symbol
MIN
TYP
25
MAX
UNIT
Test Conditions
Reverse Recovery Time
trr
trr
IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
-
ns
Reverse Recovery Time
Reverse Recovery Charge
-
300
IF = 30A, diF/dt = -200A/µs
VR = 800V, TC = 25°C
Qrr
IRRM
trr
-
-
-
-
-
360
4
nC
Amps
ns
Maximum Reverse Recovery Current
Reverse Recovery Time
-
-
380
1700
8
IF = 30A, diF/dt = -200A/µs
VR = 800V, TC = 125°C
Qrr
Reverse Recovery Charge
nC
Amps
ns
IRRM
trr
Maximum Reverse Recovery Current
Reverse Recovery Time
-
-
160
IF = 30A, diF/dt = -1000A/µs
VR = 800V, TC = 125°C
Qrr
Reverse Recovery Charge
2550
nC
IRRM
Maximum Reverse Recovery Current
Amps
-
28
1.20
0.9
0.7
0.5
0.3
1.00
0.80
0.60
0.40
0.20
0
Note:
t
1
t
2
t
1
t
/
2
Duty Factor D =
0.1
SINGLE PULSE
Peak T = P
x Z
+ T
θJC C
J
DM
0.05
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL
Junction
temp(°C)
0.219
0.468
0.341
0.00306
0.0463
0.267
Power
(watts)
Case temperature(°C)
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL
APT45GP120JDQ2
100
90
80
70
60
50
40
30
20
450
400
350
300
250
200
150
100
50
T
V
= 125°C
= 800V
J
60A
R
30A
T
= 175°C
J
15A
T
= 25°C
J
T
= 125°C
J
T
= -55°C
4
J
10
0
0
0
1
2
3
5
0
200
400
600
800
1000 1200
-di /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 27. Reverse Recovery Time vs. Current Rate of Change
V , ANODE-TO-CATHODE VOLTAGE (V)
F
F
Figure 26. Forward Current vs. Forward Voltage
30
4000
3500
3000
2500
2000
1500
1000
T
V
= 125°C
= 800V
T
V
= 125°C
= 800V
J
J
60A
R
R
25
20
15
10
5
60A
30A
30A
15A
15A
500
0
0
0
200
400
600
800 1000 1200
0
200
400
600
800 1000 1200
-di /dt, CURRENT RATE OF CHANGE (A/µs)
-di /dt, CURRENT RATE OF CHANGE (A/µs)
F
F
Figure 28. Reverse Recovery Charge vs. Current Rate of Change
Figure 29. Reverse Recovery Current vs. Current Rate of Change
1.2
45
Q
rr
Duty cycle = 0.5
T
= 175°C
J
40
35
30
25
20
15
10
5
t
rr
1.0
t
rr
0.8
I
RRM
0.6
0.4
Q
rr
0.2
0.0
0
0
25
50
75
100
125
150
25
50
75
Case Temperature (°C)
Figure 31. Maximum Average Forward Current vs. CaseTemperature
100
125
150
175
T , JUNCTION TEMPERATURE (°C)
J
Figure 30. Dynamic Parameters vs. Junction Temperature
200
150
100
50
0
1
10
100 200
V , REVERSE VOLTAGE (V)
R
Figure 32. Junction Capacitance vs. Reverse Voltage
TYPICAL PERFORMANCE CURVES
APT45GP120JDQ2
V
r
diF/dt Adjust
+18V
0V
APT10035LLL
D.U.T.
t
Q
/
30µH
rr rr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 33. Diode Test Circuti
1
2
IF - Forward Conduction Current
1
4
5
diF/dt - Rate of Diode Current Change Through Zero Crossing.
IRRM - Maximum Reverse Recovery Current.
Zero
3
4
0.25 I
RRM
t
- Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
3
rr
2
line through IRRM and 0.25 IRRM passes through zero.
5
Q
- Area Under the Curve Defined by IRRM and t .
rr
rr
Figure 34, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030) 12.6 (.496)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Emitter/Anode
Collector/Cathode
30.1 (1.185)
30.3 (1.193)
* Emitter/Anode terminals are
shorted internally. Current
handling capability is equal
for either Emitter/Anode terminal.
38.0 (1.496)
38.2 (1.504)
* Emitter/Anode
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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