APT45GR65B2DU30
更新时间：2024-10-29 18:51:17
品牌：MICROSEMI
描述：Insulated Gate Bipolar Transistor, 118A I(C), 650V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, T-MAX, TO-247, 3 PIN
概述
规格参数
数据手册APT45GR65B2DU30 概述
Insulated Gate Bipolar Transistor, 118A I(C), 650V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, T-MAX, TO-247, 3 PIN IGBT
APT45GR65B2DU30 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Obsolete |
| 包装说明： | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code： | compliant |
| ECCN代码： | EAR99 | 风险等级： | 5.84 |
| 最大集电极电流 (IC)： | 118 A | 集电极-发射极最大电压： | 650 V |
| 配置： | SINGLE WITH BUILT-IN DIODE | JEDEC-95代码： | TO-247AD |
| JESD-30 代码： | R-PSFM-T3 | JESD-609代码： | e1 |
| 元件数量： | 1 | 端子数量： | 3 |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | FLANGE MOUNT | 峰值回流温度（摄氏度）： | NOT SPECIFIED |
| 极性/信道类型： | N-CHANNEL | 表面贴装： | NO |
| 端子面层： | TIN SILVER COPPER | 端子形式： | THROUGH-HOLE |
| 端子位置： | SINGLE | 处于峰值回流温度下的最长时间： | NOT SPECIFIED |
| 晶体管应用： | POWER CONTROL | 晶体管元件材料： | SILICON |
| 标称断开时间 (toff)： | 175 ns | 标称接通时间 (ton)： | 47 ns |
| Base Number Matches： | 1 |
APT45GR65B2DU30 数据手册
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PDF下载APT45GR65B2DU30
650V, 45A, VCE(on)= 1.9V Typical
Ultra Fast NPT - IGBT® with Ultra Soft Recovery Diode
The Ultra Fast 650V NPT-IGBT® family of products is the newest generation
of IGBTs optimized for outstanding ruggedness and best trade-off between
conduction and switching losses.
Features
• Low Saturation Voltage
• Short Circuit Withstand Rated
• High Frequency Switching
• Ultra Low Leakage Current
• Snap-free Switching
• Low Tail Current
Combi (IGBT and Diode)
• RoHS Compliant
• Smooth Reverse Recovery
Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for
applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power
supplies (UPS).
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
Ratings
Unit
VCES
Collector Emitter Voltage
650
V
VGE
IC1
Gate-Emitter Voltage
±30
118
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
IC2
56
A
1
ICM
Pulsed Collector Current
224
SCWT
PD
Short Circuit Withstand Time: VCE = 325V, VGE = 15V, TC=125°C
Total Power Dissipation @ TC = 25°C
10
μs
543
W
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
-55 to 150
300
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter
Min
650
3.5
Typ
Max
Unit
V(BR)CES
VGE(TH)
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 350ꢀA)
Gate Threshold Voltage (VCE = VGE, IC = 2.5mA, Tj = 25°C)
5.0
6.5
2.4
Volts
Collector-Emitter On Voltage (VGE = 15V, IC = 45A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 45A, Tj = 125°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 90A, Tj = 25°C)
1.9
2.4
2.6
20
VCE(ON)
2
Collector Cut-off Current (VCE = 650V, VGE = 0V, Tj = 25°C)
350
ICES
IGES
ꢀA
2
Collector Cut-off Current (VCE = 650V, VGE = 0V, Tj = 125°C)
200
Gate-Emitter Leakage Current (VGE = ±20V)
±250
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
APT45GR65B2DU30
Symbol
Cies
Parameter
Test Conditions
Capacitance
Min
Typ
2900
548
268
7.5
Max
Unit
Input Capacitance
Coes
Output Capacitance
Reverse Transfer Capacitance
Gate to Emitter Plateau Voltage
Total Gate Charge
VGE = 0V, VCE = 25V
f = 1MHz
pF
Cres
VGEP
Gate Charge
V
3
Qg
150
18
203
24
V
GE = 15V
Qge
Qgc
td(on)
tr
Gate-Emitter Charge
Gate- Collector Charge
Turn-On Delay Time
Current Rise Time
VCE= 325V
IC = 45A
nC
74
100
Inductive Switching (25°C)
VCC = 433V
15
32
ns
ꢀJ
ns
ꢀJ
td(off)
tf
Turn-Off Delay Time
Current Fall Time
100
50
VGE = 15V
IC = 45A
5
RG = 4.3Ω 4
Eon2
Turn-On Switching Energy
Turn-Off Switching Energy
Turn-On Delay Time
Current Rise Time
1100
540
15
1650
870
6
Eoff
TJ = +25°C
td(on)
tr
td(off)
tf
Inductive Switching (125°C)
VCC = 433V
32
Turn-Off Delay Time
Current Fall Time
123
52
VGE = 15V
IC = 45A
5
RG = 4.3Ω 4
Eon2
Turn-On Switching Energy
Turn-Off Switching Energy
1600
800
2400
1160
6
Eoff
TJ = +125°C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
Min
Typ
Max
0.23
0.80
40
Unit
Junction to Case Thermal Resistance (IGBT)
RθJC
°C/W
Junction to Case Thermal Resistance (Diode)
RθJA
WT
Junction to Ambient Thermal Resistance
0.22
6.2
oz
g
Package Weight
1
2
3
4
5
6
Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
Pulse test: Pulse Width < 380μs, duty cycle < 2%.
See Mil-Std-750 Method 3471.
R
G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
on2 is the energy loss at turn-on and includes the charge stored in the freewheeling diode.
Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
E
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
0.25
D = 0.9
0.20
0.5
0.15
0.3
Note:
0.10
0.1
t
1
t
2
0.05
0.02
0.05
0
t
1
t
/
2
Duty Factor D =
Peak T = P x Z
+ T
C
J
DM
θJC
SINGLE PULSE
10-4
10-5
10-2
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-3
0.1
1
TYPICAL PERFORMANCE CURVES
APT45GR65B2DU30
180
100
90
80
70
60
50
40
30
20
10
0
V
= 15V
GE
160
140
120
100
80
TJ= - 55°C
TJ= 25°C
TJ= 125°C
TJ= 150°C
60
40
20
0
0
10 20 30 40 50 60 70 80 90
0
1
2
3
4
5
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
I (A)
C
CE
FIGURE 3, Saturation Voltage Characteristics
FIGURE 2, Max Frequency vs Current (T
= 75°C)
case
150
4
15V 13V
I
= 90A
C
I
125
100
75
50
25
0
10V
9.0V
3
2
1
0
= 45A
C
8.0V
I
= 22.5A
C
7.5V
7V
6.5V
VGE = 15V.
250ꢀs PULSE TEST
<0.5 % DUTY CYCLE
-50 -25
0
25
50
75
100 125
0
2
4
6
8
10 12 14 16 18 20
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
T , Junction Temperature (°C)
CE
J
FIGURE 4, Output Characteristics (T = 25°C)
FIGURE 5, On State Voltage vs Junction Temperature
J
4
200
150
100
50
TJ = 25°C.
250ꢀs PULSE TEST
250ꢀs PULSE TEST
<0.5 % DUTY CYCLE
<0.5 % DUTY CYCLE
TJ= -55°C
3
I
= 90A
= 45A
C
I
C
2
1
I
= 22.5A
C
TJ= 150°C
TJ= 125°C
TJ= 25°C
0
0
2
4
6
8
10
12
8
10
12
14
16
18
V
, GATE-TO-EMITTER VOLTAGE (V)
V
, GATE-TO-EMITTER VOLTAGE (V)
GE
GE
FIGURE 6, Transfer Characteristics
FIGURE 7, On State Voltage vs Gate-to-Emitter Voltage
160
1.15
1.10
140
120
100
80
1.05
1.00
0.95
60
40
0.90
0.85
20
0
−50 −25
0
25 50 75 100 125 150
-50 -25
0
25
50
75
100 125
T , JUNCTION TEMPERATURE
T , CASE TEMPERATURE (°C)
J
C
FIGURE 8, Breakdown Voltage vs Junction Temperature
FIGURE 9, DC Collector Current vs Case Temperature
TYPICAL PERFORMANCE CURVES
APT45GR65B2DU30
1.0E−8
18
16
14
12
10
I
= 45A
C
T
= 25°C
Cies
J
V
= 130V
CE
1.0E−9
1.0E−10
1.0E−11
V
= 325V
CE
Coes
8
V
= 520V
CE
Cres
6
4
2
0
0
20 40 60 80 100 120 140 160 180
GATE CHARGE (nC)
0
10
20
30
40
50
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
CE
FIGURE 10, Capacitance vs Collector-To-Emitter Voltage
FIGURE 11, Gate charge
1000
80
VCE = 433V, VGE=15V, RG = 4.3ꢁ
TJ = 25°C or 125°C
70
60
50
40
30
20
10
0
T
T
d(off)
r
100
T
T
f
d(on)
VCE = 433V, VGE=15V, RG = 4.3ꢁ
TJ = 25°C
TJ = 125°C
10
0
I
20
40
60
80
100
0
20
40
60
80
100
, COLLECTOR-TO-EMITTER CURRENT (A)
I
, COLLECTOR-TO-EMITTER CURRENT (A)
CE
CE
FIGURE 12, Turn-On Time vs Collector Current
FIGURE 13, Turn-Off Time vs Collector Current
4500
4000
3500
3000
2500
2000
1500
1000
500
2500
2000
1500
1000
500
VCE = 433V, VGE=15V, RG = 4.3ꢁ
TJ = 25°C
TJ = 125°C
E
on2
E
on2
E
off
VCE = 433V, VGE=15V, IC = 45A
TJ = 125°C
E
off
0
0
0
20
40
60
80
100
0
10
20
30
40
50
R , GATE RESISTANCE (Ω)
I
, COLLECTOR-TO-EMITTER CURRENT (A)
G
CE
FIGURE 15, Energy Loss vs Gate Resistance
FIGURE 14, Energy Loss vs Collector Current
2000
1000
100
10
1500
1000
500
0
E
on2
0.01ms
0.1ms
1ms
E
1
off
10ms
VCE = 433V, VGE=15V, RG = 4.3ꢁ
100ms
IC = 45A
0.1
100
, COLLECTOR-TO-EMITTER VOLTAGE
CE
1
10
1000
0
25
50
75
100
125
T , JUNCTION TEMPERATURE (°C)
V
J
FIGURE 16, Swiitching Energy vs Junction Temperature
FIGURE 17, Minimum Switching Safe Operating Area
APT45GR65B2DU30
ULTRA SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Symbol Characteristic / Test Conditions
APT45GR65B2DU30
Unit
IF(AV)
IF(RMS)
IFSM
Maximum Average Forward Current (TC = 82°C, Duty Cycle = 0.5)
30
41
RMS Forward Current (Square wave, 50% duty)
Amps
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
210
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
Min
Typ
3
Max
Unit
IF = 30A
VF
Forward Voltage
IF = 60A
3.9
3.5
Volts
IF = 60A, TJ = 125°C
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
ns
IF = 1.0A, dif/dt= -100 A/ꢀs, VR = 30V, Tj = 25°C
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Energy
Reverse Recovery
28
80
trr
trr
ns
IF = 30 Amps
dif/dt= -200 A/ꢀs
VR = 433 Volts
Tj = 25°C
110
3
nC
Qrr
IRRM
Err
trr
Amps
μJ
2
343
965
7
ns
IF = 30 Amps
dif/dt= -200 A/ꢀs
VR = 433 Volts
Tj = 125°C
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Energy
Reverse Recovery
nC
Qrr
IRRM
Err
trr
Amps
μJ
88
124
1355
24
ns
IF = 30 Amps
dif/dt= -1000 A/ꢀs
VR= 433 Volts
Tj = 125°C
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Energy
Softness Factor (tb/ta)
nC
Qrr
IRRM
Err
S
Amps
μJ
211
2
IF = 15A, dif/dt= -1000 A/ꢀs, VR= 800V, Tj = 125°C
TYPICAL PERFORMANCE CURVES
0.9
0.8
D = 0.9
0.7
0.7
0.6
0.5
0.5
0.4
Note:
t
1
0.3
0.3
0.2
0.1
t
2
t
1
t
0.1
Duty Factor D =
/
2
Peak T = P
x Z
+ T
C
J
DM
θJC
0.05
SINGLE PULSE
0
10-5
10-4
10-2
RECTANGULAR PULSE DURATION (seconds)
10-3
0.1
1
FIGURE 18, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TYPICAL PERFORMANCE CURVES
APT45GR65B2DU30
60
450
400
350
300
250
200
150
100
50
T
= 125°C
= 433V
J
T
= 150°C
V
J
60A
R
50
40
30
20
10
T
= 125°C
J
30A
15A
T
= 25°C
J
T
= -55°C
J
0
0
0
200
400
600 800 1000 1200
0
2
4
6
V , ANODE-TO-CATHODE VOLTAGE (V)
- di /dt, CURRENT RATE OF CHANGE(A/ꢀs)
F
F
FIGURE 19, F Forward Current vs. Forward Voltage
FIGURE 20, Reverse Recovery Time vs. Current Rate of Change
2000
1800
1600
1400
1200
1000
800
35
T
= 125°C
= 433V
T
= 125°C
= 433V
J
J
V
V
R
R
30
25
20
15
10
5
60A
60A
30A
30A
15A
15A
600
400
200
0
0
0
200
400
600
800 1000 1200
0
200
400
600
800 1000 1200
-di /dt, CURRENT RATE OF CHANGE (A/ꢀs)
-di /dt, CURRENT RATE OF CHANGE (A/ꢀs)
F
F
FIGURE 21, Reverse Recovery Charge vs. Current Rate of Change
FIGURE 22, Reverse Recovery Current vs. Current Rate of Change
50
1.4
Duty cycle = 0.5
45
1.2
40
35
30
25
20
15
10
5
1.0
0.7
t
rr
I
RRM
0.6
0.4
0.2
Q
rr
0
0
25
50
CASE TEMPERATURE (°C)
FIGURE 24, Max Average Forward Current vs. Case Temperature
75
100
125
150
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 23, Dynamic Parameters vs. Junction Temperature
140
120
100
80
60
40
20
0
0
10
200 300 400
500 600 700
V , REVERSE VOLTAGE (V)
R
FIGURE 25, Junction Capacitance vs. Reverse Voltage
APT45GR65B2DU30
V
r
diF /dt Adjus t
+18V
0V
D.U.T.
t
Q
/
30μH
rr rr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
FIGURE 26, Diode Test Circuit
1
2
3
4
IF - Forward Conduction Current
6
diF/dt - Rate of Diode Current Change Through Zero Crossing
RRM - Maximum Reverse Recovery Current
ta - Time to reach Maximum Reverse Recovery Current (IRRM
1
4
5
Zero
I
7
)
0.25 I
RRM
3
tb - Time from Maximum Reverse Recovery Current (IRRM) to projected
zero crossing based on a straight line from IRRM through 25% IRRM.
trr - Reverse Recovery Time measured from zero crossing where
diode current goes from positive to negative, to the point at
which the straight line through IRRM and 0.25, IRRM passes through zero
Qrr - Area Under the Curve Defined by IRRM and trr
5
2
6
7
FIGURE 27, Diode Reverse Recovery Waveform Definition
®
T-MAX (B2) Package Outline
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
1.65 (.065)
2.13 (.084)
Gate
0.40 (.016)
1.016(.040)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Collector (Cathode)
Emitter (Anode)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
APT45GR65B2DU30
Disclaimer:
The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND
CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used
without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with
Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by
any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or
otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This
product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or
applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or
use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any
patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customer's final application. User or
customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s re-
sponsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein
is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi
specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is
subject to other terms and conditions which can be located on the web at http://www.microsemi.com/terms-a-conditions.
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