APT50M50JVR [ADPOW]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.; 功率MOS V是新一代高压N沟道增强型功率MOSFET 。
| 型号： | APT50M50JVR |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| 文件： | 总4页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT50M50JVR
500V 77A 0.050Ω
POWER MOS V®
S
S
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
D
G
SOT-227
"UL Recognized"
ISOTOP®
D
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Popular SOT-227 Package
G
S
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT50M50JVR
UNIT
VDSS
ID
Drain-Source Voltage
500
77
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
308
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Watts
700
PD
5.6
W/°C
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
-55 to 150
300
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
77
1
EAR
EAS
50
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
3600
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
500
77
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms
0.050
100
500
±100
4
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
IDSS
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
IGSS
nA
VGS(th)
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
EUROPE
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
APT50M50JVR
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
16300 19600
VGS = 0V
VDS = 25V
f = 1 MHz
Output Capacitance
2210
850
675
95
3090
1275
1000
140
480
50
pF
Reverse Transfer Capacitance
3
VGS = 10V
Total Gate Charge
Qgs
Qgd
VDD = 0.5 VDSS
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
ns
ID = ID[Cont.] @ 25°C
320
25
td(on)
tr
td(off)
tf
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 0.6Ω
20
40
Turn-off Delay Time
Fall Time
85
125
24
12
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
77
UNIT
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
VSD
t rr
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
308
1.3
2
(VGS = 0V, IS = -ID[Cont.]
)
Volts
ns
Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
880
31
Q rr
µC
THERMAL/PACKAGE CHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
UNIT
RθJC
RθJA
Junction to Case
0.18
40
°C/W
Junction to Ambient
2500
Volts
lb•in
VIsolation
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Torque Maximum Torque for Device Mounting Screws and Electrical Terminations.
13
1
2
3
Repetitive Rating: Pulse width limited by maximum junction
temperature.
See MIL-STD-750 Method 3471
4
Starting T = +25°C, L = 1.21mH, R = 25Ω, Peak I = 77A
j
G
L
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.2
D=0.5
0.1
0.05
0.2
0.1
0.05
0.01
Note:
0.02
0.01
0.005
t
1
t
SINGLE PULSE
2
t
1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
0.001
0.0005
J
DM
θJC
C
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT50M50JVR
250
200
150
100
50
250
200
150
100
50
V
=7V, 10V & 15V
V
=15V
GS
GS
V
=10V
GS
=7V
6.5V
6.5V
V
GS
6V
6V
5.5V
5.5V
5V
5V
4.5V
200
4.5V
0
0
0
V
50
100
150
250
0
V
2
4
6
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
8
10
12
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
250
200
150
100
50
1.3
T
= -55°C
J
NORMALIZED TO
= 10V 0.5 [Cont.]
V
@
I
D
T
= +125°C
GS
J
1.2
1.1
1.0
0.9
V
> I (ON) x
R
(ON)MAX.
DS
D
DS
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
=10V
GS
V
=20V
GS
T
= +125°C
J
T
= +25°C
T = -55°C
J
J
0
0
V
2
4
6
8
0
50
100
150
200
250
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPERES)
GS
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R (ON) vs DRAIN CURRENT
DS
1.15
1.10
1.05
1.00
0.95
0.90
80
60
40
20
0
25
50
75
100
125
150
-50 -25
0
25 50 75 100 125 150
T , CASE TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
2.5
I
= 0.5 I [Cont.]
D
D
V
= 10V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT50M50JVR
400
50,000
10µS
OPERATION HERE
LIMITED BY R (ON)
DS
100µS
100
50
C
iss
1mS
10,000
5,000
10
5
C
oss
10mS
100mS
DC
C
rss
1
T
T
=+25°C
=+150°C
C
J
.5
1,000
500
SINGLE PULSE
.1
1
V
5
10
50 100
500
.01
V
.1
1
10
50
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
400
20
16
12
8
I
= I [Cont.]
D
D
V
=100V
DS
=250V
T
=+150°C
T =+25°C
J
J
100
50
V
DS
V
=400V
DS
10
5
4
1
0
0
200
g
400
600
800 1000 1200
0
V
0.4
0.8
1.2
1.6
2.0
Q , TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
SD
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030) 12.6 (.496)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Dimensions in Millimeters and (Inches)
Gate
ISOTOP® is a Registered Trademark of SGS Thomson.
"UL Recognized" File No. E145592
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
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