APT50M50JVR [ADPOW]

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.; 功率MOS V是新一代高压N沟道增强型功率MOSFET 。
APT50M50JVR
型号: APT50M50JVR
厂家: ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述:

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
功率MOS V是新一代高压N沟道增强型功率MOSFET 。

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APT50M50JVR  
500V 77A 0.050  
POWER MOS V®  
S
S
Power MOS V® is a new generation of high voltage N-Channel enhancement  
mode power MOSFETs. This new technology minimizes the JFET effect,  
increases packing density and reduces the on-resistance. Power MOS V®  
also achieves faster switching speeds through optimized gate layout.  
D
G
SOT-227  
"UL Recognized"  
ISOTOP®  
D
• Faster Switching  
• Lower Leakage  
• 100% Avalanche Tested  
• Popular SOT-227 Package  
G
S
MAXIMUM RATINGS  
Symbol Parameter  
All Ratings: T = 25°C unless otherwise specified.  
C
APT50M50JVR  
UNIT  
VDSS  
ID  
Drain-Source Voltage  
500  
77  
Volts  
Continuous Drain Current @ TC = 25°C  
Amps  
Volts  
1
IDM  
Pulsed Drain Current  
308  
VGS  
VGSM  
Gate-Source Voltage Continuous  
Gate-Source Voltage Transient  
±30  
±40  
Total Power Dissipation @ TC = 25°C  
Linear Derating Factor  
Watts  
700  
PD  
5.6  
W/°C  
TJ,TSTG  
TL  
Operating and Storage Junction Temperature Range  
-55 to 150  
300  
°C  
Amps  
mJ  
Lead Temperature: 0.063" from Case for 10 Sec.  
1
IAR  
Avalanche Current  
(Repetitive and Non-Repetitive)  
77  
1
EAR  
EAS  
50  
Repetitive Avalanche Energy  
Single Pulse Avalanche Energy  
4
3600  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
TYP  
MAX  
UNIT  
BVDSS  
ID(on)  
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)  
Volts  
500  
77  
2
On State Drain Current  
(VDS > ID(on) x RDS(on) Max, VGS = 10V)  
Amps  
2
RDS(on)  
Drain-Source On-State Resistance  
(VGS = 10V, 0.5 ID[Cont.])  
Ohms  
0.050  
100  
500  
±100  
4
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)  
IDSS  
µA  
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)  
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)  
Gate Threshold Voltage (VDS = VGS, ID = 5mA)  
IGSS  
nA  
VGS(th)  
Volts  
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  
USA  
405 S.W. Columbia Street  
EUROPE  
Bend, Oregon 97702-1035  
F-33700 Merignac - France  
Phone: (541) 382-8028  
Phone: (33) 5 57 92 15 15  
FAX: (541) 388-0364  
FAX: (33) 5 56 47 97 61  
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord  
APT50M50JVR  
DYNAMIC CHARACTERISTICS  
Symbol Characteristic  
Test Conditions  
MIN  
TYP  
MAX  
UNIT  
Ciss  
Coss  
Crss  
Qg  
Input Capacitance  
16300 19600  
VGS = 0V  
VDS = 25V  
f = 1 MHz  
Output Capacitance  
2210  
850  
675  
95  
3090  
1275  
1000  
140  
480  
50  
pF  
Reverse Transfer Capacitance  
3
VGS = 10V  
Total Gate Charge  
Qgs  
Qgd  
VDD = 0.5 VDSS  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time  
Rise Time  
nC  
ns  
ID = ID[Cont.] @ 25°C  
320  
25  
td(on)  
tr  
td(off)  
tf  
VGS = 15V  
VDD = 0.5 VDSS  
ID = ID[Cont.] @ 25°C  
RG = 0.6Ω  
20  
40  
Turn-off Delay Time  
Fall Time  
85  
125  
24  
12  
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
TYP  
MAX  
77  
UNIT  
IS  
Continuous Source Current (Body Diode)  
Amps  
1
ISM  
VSD  
t rr  
Pulsed Source Current  
Diode Forward Voltage  
(Body Diode)  
308  
1.3  
2
(VGS = 0V, IS = -ID[Cont.]  
)
Volts  
ns  
Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)  
Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)  
880  
31  
Q rr  
µC  
THERMAL/PACKAGE CHARACTERISTICS  
Symbol Characteristic  
MIN  
TYP  
MAX  
UNIT  
RθJC  
RθJA  
Junction to Case  
0.18  
40  
°C/W  
Junction to Ambient  
2500  
Volts  
lb•in  
VIsolation  
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)  
Torque Maximum Torque for Device Mounting Screws and Electrical Terminations.  
13  
1
2
3
Repetitive Rating: Pulse width limited by maximum junction  
temperature.  
See MIL-STD-750 Method 3471  
4
Starting T = +25°C, L = 1.21mH, R = 25, Peak I = 77A  
j
G
L
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%  
APT Reserves the right to change, without notice, the specifications and information contained herein.  
0.2  
D=0.5  
0.1  
0.05  
0.2  
0.1  
0.05  
0.01  
Note:  
0.02  
0.01  
0.005  
t
1
t
SINGLE PULSE  
2
t
1
Duty Factor D =  
Peak T = P x Z  
/
t
2
+ T  
0.001  
0.0005  
J
DM  
θJC  
C
10-5  
10-4  
10-3  
10-2  
10-1  
1.0  
10  
RECTANGULAR PULSE DURATION (SECONDS)  
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION  
APT50M50JVR  
250  
200  
150  
100  
50  
250  
200  
150  
100  
50  
V
=7V, 10V & 15V  
V
=15V  
GS  
GS  
V
=10V  
GS  
=7V  
6.5V  
6.5V  
V
GS  
6V  
6V  
5.5V  
5.5V  
5V  
5V  
4.5V  
200  
4.5V  
0
0
0
V
50  
100  
150  
250  
0
V
2
4
6
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  
DS  
8
10  
12  
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  
DS  
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS  
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS  
250  
200  
150  
100  
50  
1.3  
T
= -55°C  
J
NORMALIZED TO  
= 10V 0.5 [Cont.]  
V
@
I
D
T
= +125°C  
GS  
J
1.2  
1.1  
1.0  
0.9  
V
> I (ON) x  
R
(ON)MAX.  
DS  
D
DS  
250µSEC. PULSE TEST  
@ <0.5 % DUTY CYCLE  
V
=10V  
GS  
V
=20V  
GS  
T
= +125°C  
J
T
= +25°C  
T = -55°C  
J
J
0
0
V
2
4
6
8
0
50  
100  
150  
200  
250  
, GATE-TO-SOURCE VOLTAGE (VOLTS)  
I , DRAIN CURRENT (AMPERES)  
GS  
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS  
FIGURE 5, R (ON) vs DRAIN CURRENT  
DS  
1.15  
1.10  
1.05  
1.00  
0.95  
0.90  
80  
60  
40  
20  
0
25  
50  
75  
100  
125  
150  
-50 -25  
0
25 50 75 100 125 150  
T , CASE TEMPERATURE (°C)  
T , JUNCTION TEMPERATURE (°C)  
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE  
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE  
1.2  
2.5  
I
= 0.5 I [Cont.]  
D
D
V
= 10V  
GS  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
2.0  
1.5  
1.0  
0.5  
0.0  
-50 -25  
0
25 50  
75 100 125 150  
-50 -25  
0
25 50 75 100 125 150  
T , JUNCTION TEMPERATURE (°C)  
T , CASE TEMPERATURE (°C)  
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE  
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE  
APT50M50JVR  
400  
50,000  
10µS  
OPERATION HERE  
LIMITED BY R (ON)  
DS  
100µS  
100  
50  
C
iss  
1mS  
10,000  
5,000  
10  
5
C
oss  
10mS  
100mS  
DC  
C
rss  
1
T
T
=+25°C  
=+150°C  
C
J
.5  
1,000  
500  
SINGLE PULSE  
.1  
1
V
5
10  
50 100  
500  
.01  
V
.1  
1
10  
50  
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  
DS  
DS  
FIGURE 10, MAXIMUM SAFE OPERATING AREA  
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE  
400  
20  
16  
12  
8
I
= I [Cont.]  
D
D
V
=100V  
DS  
=250V  
T
=+150°C  
T =+25°C  
J
J
100  
50  
V
DS  
V
=400V  
DS  
10  
5
4
1
0
0
200  
g
400  
600  
800 1000 1200  
0
V
0.4  
0.8  
1.2  
1.6  
2.0  
Q , TOTAL GATE CHARGE (nC)  
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)  
SD  
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE  
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE  
SOT-227 (ISOTOP®) Package Outline  
11.8 (.463)  
12.2 (.480)  
31.5 (1.240)  
31.7 (1.248)  
8.9 (.350)  
9.6 (.378)  
W=4.1 (.161)  
W=4.3 (.169)  
H=4.8 (.187)  
H=4.9 (.193)  
(4 places)  
7.8 (.307)  
8.2 (.322)  
Hex Nut M4  
(4 places)  
25.2 (0.992)  
25.4 (1.000)  
r = 4.0 (.157)  
(2 places)  
4.0 (.157)  
4.2 (.165)  
(2 places)  
0.75 (.030) 12.6 (.496)  
0.85 (.033) 12.8 (.504)  
3.3 (.129)  
3.6 (.143)  
1.95 (.077)  
2.14 (.084)  
14.9 (.587)  
15.1 (.594)  
* Source  
Drain  
30.1 (1.185)  
30.3 (1.193)  
* Source terminals are shorted  
internally. Current handling  
capability is equal for either  
Source terminal.  
38.0 (1.496)  
38.2 (1.504)  
* Source  
Dimensions in Millimeters and (Inches)  
Gate  
ISOTOP® is a Registered Trademark of SGS Thomson.  
"UL Recognized" File No. E145592  
APT's devices are covered by one or more of the following U.S.patents: 4,895,810  
5,256,583  
5,045,903  
4,748,103  
5,089,434  
5,283,202  
5,182,234  
5,231,474  
5,019,522  
5,434,095  
5,262,336  
5,528,058  

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