APT50M75JFLL_04 [ADPOW]
POWER MOS 7 R FREDFET; 功率MOS 7 R FREDFET
| 型号： | APT50M75JFLL_04 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | POWER MOS 7 R FREDFET |
| 文件： | 总5页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT50M75JFLL
500V 51A 0.075Ω
R
POWER MOS 7 FREDFET
S
S
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
D
G
SOT-227
"UL Recognized"
ISOTOP®
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
D
S
G
• Popular SOT-227 Package
•
FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT50M75JFLL
UNIT
VDSS
ID
Drain-Source Voltage
500
51
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
204
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
±30
±40
Watts
W/°C
460
PD
3.68
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
51
1
EAR
EAS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
50
4
2500
STATICELECTRICALCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
Volts
Ohms
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
2
Drain-Source On-State Resistance
(VGS = 10V, ID = 25.5A)
0.075
250
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
IDSS
µA
1000
±100
5
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
APT50M75JFLL
DYNAMIC CHARACTERISTICS
Symbol
MIN
TYP
MAX
Characteristic
UNIT
TestConditions
Ciss
V
= 0V
Input Capacitance
5590
1180
85
GS
V
= 25V
Coss
Crss
Qg
pF
Output Capacitance
DS
f = 1 MHz
Reverse Transfer Capacitance
3
V
= 10V
Total Gate Charge
125
33
GS
V
= 300V
Qgs
Qgd
td(on)
tr
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
DD
I
= 51A @ 25°C
D
65
RESISTIVESWITCHING
8
V
= 15V
GS
17
V
= 300V
DD
td(off)
21
Turn-off Delay Time
Fall Time
I
= 51A @ 25°C
D
tf
R
= 0.6Ω
3
G
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
675
650
Turn-on Switching Energy
V
= 333V, V = 15V
GS
DD
I
Turn-off Switching Energy
= 51A, R = 5Ω
D
G
µJ
INDUCTIVESWITCHING@125°C
6
Eon
Eoff
Turn-on Switching Energy
1110
755
V
= 333V V = 15V
GS
DD
Turn-off Switching Energy
I
= 51A, R = 5Ω
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
51
UNIT
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
VSD
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
228
1.3
15
2
(VGS = 0V, IS = -51A)
Volts
V/ns
dv
5
dv
/
Peak Diode Recovery
/
dt
dt
Reverse Recovery Time
(IS = -51A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
280
600
trr
ns
µC
Reverse Recovery Charge
(IS = -51A, di/dt = 100A/µs)
1.9
5.7
15
Qrr
Peak Recovery Current
(IS = -51A, di/dt = 100A/µs)
IRRM
Amps
23
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.27
40
UNIT
Junction to Case
RθJC
RθJA
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 1.92mH, R = 25Ω, Peak I = 51A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤ -I 51A
/
≤ 700A/µs
VR ≤ V
T ≤ 150°C
J
dt
S
D
DSS
6
Eon includes diode reverse recovery. See figures 18, 20.
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
0.30
0.9
0.7
0.5
0.3
0.25
0.20
0.15
0.10
Note:
t
1
t
2
0.05
0
t
1
Duty Factor D =
Peak T = P x Z
/
t
0.1
2
+ T
J
DM θJC
C
0.05
SINGLEPULSE
10-3
10-5
10-4
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
Typical Performance Curves
APT50M75JFLL
120
100
8V
15 &10V
7.5V
RC MODEL
0.0409
Junction
temp. (°C)
7V
0.0246F
0.406F
148F
80
60
40
Power
(watts)
6.5V
0.255
6V
0.00361
20
0
5.5V
Case temperature. (°C)
0
5
10
15
20
25
30
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2,TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGEOUTPUTCHARACTERISTICS
160
1.2
V
> I (ON) x
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
MAX.
DS(ON)
DS
D
NORMALIZED TO
140
120
100
V
= 10V
@
I
= 25.5A
GS
D
1.1
1.0
0.9
0.8
V
=10V
GS
V
=20V
GS
80
60
40
20
0
T
= +125°C
= +25°C
J
T
= -55°C
J
T
J
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4,TRANSFERCHARACTERISTICS
FIGURE5,R
vsDRAINCURRENT
DS(ON)
1.15
1.10
1.05
1.00
0.95
60
50
40
30
20
10
0
0.90
0.85
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
2.5
1.2
I
= 25.5A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8,R
vs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
DS(ON)
APT50M75JFLL
204
100
20,000
10,000
OPERATIONHERE
LIMITEDBYR (ON)
DS
C
iss
100µS
C
oss
1,000
10
1mS
100
10
C
rss
10mS
T
=+25°C
C
J
T =+150°C
SINGLEPULSE
1
1
10
100
500
0
10
20
30
40
50
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
16
12
200
I
= 51A
V
=100V
D
DS
100
V
=250V
DS
T =+150°C
J
V
=400V
DS
T =+25°C
J
8
4
0
10
1
0
40
80
120
160
200
0.3
V
0.6
0.9
1.2
1.5
Q ,TOTALGATECHARGE(nC)
g
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
SD
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
FIGURE13,SOURCE-DRAINDIODEFORWARDVOLTAGE
100
120
V
= 333V
DD
= 5Ω
110
100
90
80
70
60
50
40
30
20
10
R
T
90
G
t
= 125°C
d(off)
J
80
70
L = 100µH
t
V
= 333V
f
DD
= 5Ω
R
T
G
60
50
40
30
20
= 125°C
J
L = 100µH
t
r
t
d(on)
10
1
10 20 30
40 50
(A)
60
70
80
90
10 20
30
40 50 60
(A)
70 80
90
I
I
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2500
2000
1500
1000
3000
2500
2000
1500
1000
V
= 333V
V
I
= 333V
DD
= 5Ω
DD
= 51A
R
T
G
D
= 125°C
T
= 125°C
J
J
E
L = 100µH
off
L = 100µH
E
EON includes
EON includes
on
diode reverse recovery
diode reverse recovery
E
on
500
0
500
0
E
off
10 20
30
40
50
(A)
60
70
80 90
0
5
10 15 20 25 30 35 40 45 50
I
R ,GATERESISTANCE(Ohms)
D
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT50M75JFLL
90 %
Gate Voltage
Drain Current
10 %
td(on)
Gate Voltage
Drain Voltage
TJ = 125
C
TJ = 125
C
td(off)
tf
90%
90%
tr
5 %
5 %
0
Drain Voltage
Drain Current
10%
10%
Switching Energy
Switching Energy
Figure19,Turn-offSwitchingWaveformsandDefinitions
Figure18,Turn-onSwitchingWaveformsandDefinitions
APT60DF60
VDS
ID
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227(ISOTOP®)PackageOutline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030) 12.6 (.496)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Dimensions in Millimeters and (Inches)
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
Gate
ISOTOP®isaRegisteredTrademarkofSGSThomson.
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