APTGF330SK60D3 [ADPOW]
Buck chopper NPT IGBT Power Module; 降压斩波NPT IGBT功率模块
| 型号： | APTGF330SK60D3 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Buck chopper NPT IGBT Power Module |
| 文件： | 总3页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGF330SK60D3
VCES = 600V
IC = 330A @ Tc = 80°C
Buck Chopper
Application
•
•
AC and DC motor control
Switched Mode Power Supplies
Features
•
Non Punch Through (NPT) fast IGBT
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
•
•
Kelvin emitter for easy drive
Low stray inductance
-
M6 power connectors
•
High level of integration
3
2
1
Benefits
4
5
•
Outstanding performance at high frequency
operation
•
•
•
•
•
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
7
6
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
460
330
800
±20
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 125°C
1400
RBSOA Reverse Bias Safe Operation Area
800A@420V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 - 3
APT website – http://www.advancedpower.com
APTGF330SK60D3
Electrical Characteristics
Symbol Characteristic
All ratings @ Tj = 25°C unless otherwise specified
Test Conditions
Min Typ Max Unit
BVCES Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 10 mA
600
V
Tj = 25°C
2
750
2.5
µA
mA
VGE = 0V
VCE = 600V
ICES
Zero Gate Voltage Collector Current
Tj = 125°C
Tj = 25°C
Tj = 125°C
1.5
2.0
2.2
V
GE = 15V
VCE(on) Collector Emitter on Voltage
VGE(th) Gate Threshold Voltage
V
IC = 400A
VGE = VCE , IC = 8 mA
VGE = 20V, VCE = 0V
4.5
6.5
600
V
nA
IGES
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
VGE = 0V, VCE = 25V
f = 1MHz
Min Typ Max Unit
Cies
Cres
Td(on)
Tr
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
18
nF
1.6
165
40
Inductive Switching (25°C)
V
GE = ±15V
ns
VBus = 300V
IC = 400A
RG = 0.82Ω
Td(off) Turn-off Delay Time
250
Tf
Fall Time
35
Inductive Switching (125°C)
Td(on)
Tr
Turn-on Delay Time
Rise Time
180
V
V
GE = ±15V
Bus = 300V
50
ns
Td(off) Turn-off Delay Time
285
IC = 400A
Tf
Fall Time
40
RG = 0.82Ω
Eoff
Turn off energy
13
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IF = 400A
Tj = 25°C
Tj = 125°C
1.25
1.2
1.6
VF
Er
Diode Forward Voltage
Reverse Recovery Energy
V
V
GE = 0V
IF = 400A
VR = 300V
di/dt =900A/µs
IF = 400A
VR = 300V
di/dt =900A/µs
Tj = 125°C
8.2
mJ
Tj = 25°C
24
40
Qrr
Reverse Recovery Charge
µC
Tj = 125°C
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.089
0.15
°C/W
RthJC
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
VISOL
2500
V
TJ
TSTG
TC
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
For terminals
-40
-40
-40
3
150
125
125
5
5
380
°C
M6
M6
Torque Mounting torque
Wt Package Weight
N.m
g
To Heatsink
3
2 - 3
APT website – http://www.advancedpower.com
APTGF330SK60D3
Package outline
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
3 - 3
APT website – http://www.advancedpower.com
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