APTGF50TDU120P [ADPOW]
Triple dual Common Source NPT IGBT Power Module; 三重双共源NPT IGBT功率模块
| 型号： | APTGF50TDU120P |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Triple dual Common Source NPT IGBT Power Module |
| 文件： | 总6页 (文件大小：318K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGF50TDU120P
Triple dual Common Source
NPT IGBT Power Module
VCES = 1200V
IC = 50A @ Tc = 80°C
C1
C3
C5
Application
•
•
•
AC Switches
G1
G3
G5
Switched Mode Power Supplies
Uninterruptible Power Supplies
E1
E2
E3
E4
E5
E6
E1/E2
E3/E4
E5/E6
Features
•
Non Punch Through (NPT) FAST IGBT
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
G6
G2
G4
C2
C4
C6
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
•
•
Kelvin emitter for easy drive
Very low stray inductance
-
-
Symmetrical design
Lead frames for power connections
•
Benefits
•
High level of integration
Outstanding performance at high frequency
operation
C 1
C 3
C 5
G1
E1
G3
E3
G5
E5
•
•
•
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
E1/E2
E3/E4
E5/E6
E2
E4
G4
E6
G6
G2
•
•
•
Very low (12mm) profile
C 2
C 4
C 6
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
75
V
Tc = 25°C
Tc = 80°C
Tc = 25°C
IC
Continuous Collector Current
A
50
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
150
±20
312
V
W
Tc = 25°C
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C
150A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 - 6
APT website – http://www.advancedpower.com
APTGF50TDU120P
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVCES Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 500 µA
1200
V
VGE = 0V
Tj = 25°C
500
2500
3.7
ICES
Zero Gate Voltage Collector Current
µA
VCE = 1200V
Tj = 125°C
Tj = 25°C
Tj = 125°C
VGE =15V
3.2
4.0
VCE(on) Collector Emitter on Voltage
VGE(th) Gate Threshold Voltage
V
IC = 50A
VGE = VCE, IC = 1 mA
VGE = ±20 V, VCE = 0V
4.5
6.5
100
V
nA
IGES
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Qg
Qge
Qgc
Input Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
3450
pF
Output Capacitance
330
220
330
35
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
VGS = 15V
VBus = 600V
IC = 50A
nC
200
35
Inductive Switching (25°C)
VGE = 15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
65
ns
mJ
ns
VBus = 600V
IC = 50A
320
Tf
Eon
Fall Time
Turn-on Switching Energy X
30
5.4
2.3
35
65
360
RG = 5Ω
Eoff
Turn-off Switching Energy Y
Inductive Switching (125°C)
VGE = 15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
VBus = 600V
IC = 50A
Tf
Eon
Eoff
Fall Time
Turn-on Switching Energy X
Turn-off Switching Energy Y
40
RG = 5Ω
6.9
3.05
mJ
X Eon includes diode reverse recovery
Y In accordance with JEDEC standard JESD24-1
2 - 6
APT website – http://www.advancedpower.com
APTGF50TDU120P
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
µA
A
Tj = 25°C
Tj = 125°C
Tc = 70°C
250
500
IRM
Maximum Reverse Leakage Current
VR=1200V
IF(AV)
Maximum Average Forward Current
Diode Forward Voltage
50% duty cycle
IF = 60A
IF = 120A
IF = 60A
60
2
2.3
1.8
2.5
VF
V
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
400
470
1200
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 60A
VR = 800V
di/dt =200A/µs
Qrr
nC
4000
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.4
RthJC
Junction to Case
°C/W
0.9
VISOL
TJ
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
3
V
150
125
100
5
°C
TSTG
TC
Operating Case Temperature
Torque Mounting torque
Wt
To heatsink
M6
N.m
g
Package Weight
250
Package outline
5 places (3:1)
3 - 6
APT website – http://www.advancedpower.com
APTGF50TDU120P
Typical Performance Curve
Output Characteristics (VGE=10V)
Output characteristics (VGE=15V)
200
160
120
80
50
40
30
20
10
0
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
TJ=25°C
TJ=25°C
TJ=125°C
TJ=125°C
40
0
0
1
2
3
4
0
2
4
6
8
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Gate Charge
Transfer Characteristics
300
250
200
150
100
50
18
16
14
12
10
8
6
4
2
VCE=240V
IC = 50A
250µs Pulse Test
< 0.5% Duty cycle
TJ = 25°C
VCE=600V
VCE=960V
TJ=125°C
TJ=25°C
0
0
0
50
100 150 200 250 300 350
Gate Charge (nC)
0
4
8
12
16
VGE, Gate to Emitter Voltage (V)
On state Voltage vs Junction Temperature
On state Voltage vs Gate to Emitter Volt.
9
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
250µs Pulse Test
Ic=100A
TJ = 25°C
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
V
GE = 15V
Ic=100A
Ic=50A
Ic=50A
Ic=25A
Ic=25A
9
10
11
12
13
14
15
16
-50 -25
0
25
50
75
100 125
VGE, Gate to Emitter Voltage (V)
TJ, Junction Temperature (°C)
DC Collector Current vs Case Temperature
Breakdown Voltage vs Junction Temp.
90
80
70
60
50
40
30
20
10
0
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50 -25
0
25
50
75 100 125
-50 -25
0
25 50 75 100 125 150
TC, Case Temperature (°C)
TJ, Junction Temperature (°C)
4 - 6
APT website – http://www.advancedpower.com
APTGF50TDU120P
Turn-On Delay Time vs Collector Current
Turn-Off Delay Time vs Collector Current
45
40
35
30
25
400
350
300
250
200
VCE = 600V
VGE=15V,
TJ=125°C
RG = 5Ω
VGE = 15V
VGE=15V,
TJ=25°C
VCE = 600V
RG = 5Ω
0
25
50
75
100
125
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
Current Fall Time vs Collector Current
180
140
100
60
50
40
30
20
VCE = 600V
RG = 5Ω
TJ = 125°C
VGE=15V
TJ = 25°C
VCE = 600V, VGE = 15V, RG = 5Ω
20
0
25
50
75
100
125
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
Turn-On Energy Loss vs Collector Current
28
24
20
16
12
8
8
6
4
2
0
TJ=125°C,
VGE=15V
VCE = 600V
RG = 5Ω
VCE = 600V
VGE = 15V
RG = 5Ω
TJ = 125°C
TJ = 25°C
TJ=25°C,
VGE=15V
4
0
0
25
50
75
100
125
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Junction Temp.
Switching Energy Losses vs Gate Resistance
8
6
4
2
0
18
VCE = 600V
Eon, 50A
VCE = 600V
VGE = 15V
TJ= 125°C
16
14
12
10
8
VGE = 15V
RG = 5Ω
Eon, 50A
Eoff, 50A
Eon, 25A
Eoff, 50A
25
6
Eon, 25A
Eoff, 25A
100
4
2
0
Eoff, 25A
30
0
10
20
40
50
0
50
75
125
Gate Resistance (Ohms)
TJ, Junction Temperature (°C)
5 - 6
APT website – http://www.advancedpower.com
APTGF50TDU120P
Capacitance vs Collector to Emitter Voltage
Minimum Switching Safe Operating Area
160
140
120
100
80
10000
1000
100
Cies
60
Coes
Cres
40
20
0
0
10
20
30
40
50
0
400
800
1200
VCE, Collector to Emitter Voltage (V)
V
CE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.45
0.4
0.9
0.7
0.35
0.3
0.25
0.2
0.5
0.3
0.15
0.1
0.1
0.05
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
Rectangular Pulse Duration (Seconds)
Operating Frequency vs Collector Current
120
VCE = 600V
D = 50%
100
80
60
40
20
0
R
G = 5Ω
TJ = 125°C
TC= 75°C
ZVS
ZCS
Hard
switching
10
20
30
40
50
60
IC, Collector Current (A)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products arecovered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
6 - 6
APT website – http://www.advancedpower.com
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