APTGT50H170T [ADPOW]

Full - Bridge Trench + Field Stop IGBT Power Module; 全 - 桥沟道+场站IGBT功率模块
APTGT50H170T
型号: APTGT50H170T
厂家: ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述:

Full - Bridge Trench + Field Stop IGBT Power Module
全 - 桥沟道+场站IGBT功率模块

晶体 晶体管 功率控制 双极性晶体管 局域网
文件: 总5页 (文件大小:281K)
中文:  中文翻译
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APTGT50H170T  
Full - Bridge  
Trench + Field Stop IGBT®  
Power Module  
VCES = 1700V  
IC = 50A @ Tc = 80°C  
Application  
VBUS  
Welding converters  
Q3  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
Motor control  
Q1  
G3  
E3  
G1  
E1  
Features  
OUT1  
OUT2  
Trench + Field Stop IGBT® Technology  
Q2  
-
-
-
-
-
-
-
-
Low voltage drop  
Q4  
Low tail current  
G4  
E4  
Switching frequency up to 20 kHz  
Soft recovery parallel diodes  
Low diode VF  
G2  
E2  
Low leakage current  
Avalanche energy rated  
RBSOA and SCSOA rated  
NTC1  
NTC2  
0/VBU S  
Kelvin emitter for easy drive  
Very low stray inductance  
-
-
Symmetrical design  
Lead frames for power connections  
High level of integration  
Internal thermistor for temperature monitoring  
G3  
G4  
E4  
OUT2  
OUT1  
E3  
Benefits  
Stable temperature behavior  
Very rugged  
Solderable terminals for easy PCB mounting  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
Low profile  
VBUS  
0/VBUS  
E1  
G1  
E2  
G2  
NTC2  
NTC1  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
1700  
V
TC = 25°C  
TC = 80°C  
TC = 25°C  
75  
50  
100  
±20  
312  
IC  
Continuous Collector Current  
A
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
V
W
TC = 25°C  
RBSOA Reverse Bias Safe Operating Area  
Tj = 125°C 100A @ 1600V  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
1 - 5  
APT website – http://www.advancedpower.com  
APTGT50H170T  
All ratings @ Tj = 25°C unless otherwise specified  
Electrical Characteristics  
Symbol Characteristic  
Test Conditions  
Min Typ Max Unit  
ICES  
Zero Gate Voltage Collector Current  
VGE = 0V, VCE = 1700V  
250  
2.4  
µA  
Tj = 25°C  
Tj = 125°C  
2.0  
2.4  
5.8  
VGE = 15V  
VCE(sat) Collector Emitter Saturation Voltage  
V
IC = 50A  
VGE(th) Gate Threshold Voltage  
IGES  
VGE = VCE , IC = 1mA  
VGE = 20V, VCE = 0V  
5.0  
6.5  
400  
V
nA  
Gate – Emitter Leakage Current  
Dynamic Characteristics  
Symbol Characteristic  
Test Conditions  
Min Typ Max Unit  
Cies  
Coes  
Cres  
Input Capacitance  
VGE = 0V  
VCE = 25V  
f = 1MHz  
4400  
pF  
Output Capacitance  
180  
150  
370  
40  
650  
180  
400  
50  
Reverse Transfer Capacitance  
Inductive Switching (25°C)  
VGE = 15V  
Td(on) Turn-on Delay Time  
Tr Rise Time  
Td(off) Turn-off Delay Time  
Tf Fall Time  
Td(on) Turn-on Delay Time  
Tr Rise Time  
Td(off) Turn-off Delay Time  
ns  
VBus = 900V  
IC = 50A  
RG = 10  
Inductive Switching (125°C)  
VGE = 15V  
ns  
VBus = 900V  
800  
300  
16  
IC = 50A  
Tf  
Eon  
Eoff  
Fall Time  
Turn-on Switching Energy  
Turn-off Switching Energy  
RG = 10 Ω  
mJ  
15  
Reverse diode ratings and characteristics  
Symbol Characteristic  
Test Conditions  
Min Typ Max Unit  
VRRM  
Maximum Peak Repetitive Reverse Voltage  
Maximum Reverse Leakage Current  
1700  
V
Tj = 25°C  
VR=1700V  
250  
500  
IRM  
µA  
Tj = 125°C  
IF(AV)  
VF  
Maximum Average Forward Current  
Diode Forward Voltage  
50% duty cycle  
IF = 50A  
Tc = 80°C  
Tj = 25°C  
Tj = 125°C  
50  
1.8  
1.9  
A
V
2.2  
Tj = 25°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
385  
490  
14  
trr  
Reverse Recovery Time  
Reverse Recovery Charge  
ns  
IF = 50A  
VR = 900V  
di/dt =800A/µs  
Qrr  
µC  
23  
2 - 5  
APT website – http://www.advancedpower.com  
APTGT50H170T  
Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information).  
Symbol Characteristic  
R25 Resistance @ 25°C  
B25/85 T25 = 298.15 K  
Min Typ Max Unit  
50  
kΩ  
K
3952  
R25  
T: Thermistor temperature  
RT: Thermistor value at T  
RT  
=
1
1
T
25/85   
exp B  
T25  
Thermal and package characteristics  
Symbol Characteristic  
Min Typ Max Unit  
IGBT  
Diode  
0.4  
RthJC  
Junction to Case  
°C/W  
0.7  
VISOL  
TJ  
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz  
Operating junction temperature range  
Storage Temperature Range  
3400  
-40  
-40  
-40  
1.5  
V
150  
125  
100  
4.7  
°C  
TSTG  
TC  
Operating Case Temperature  
Torque Mounting torque  
Wt  
To Heatsink  
M5  
N.m  
g
Package Weight  
160  
Package outline (dimensions in mm)  
3 - 5  
APT website – http://www.advancedpower.com  
APTGT50H170T  
Typical Performance Curve  
Output Characteristics (VGE=15V)  
Output Characteristics  
100  
80  
60  
40  
20  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE=20V  
TJ = 125°C  
TJ=25°C  
TJ=125°C  
VGE=13V  
VGE=15V  
VGE=9V  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
0
1
2
3
4
5
VCE (V)  
VCE (V)  
Energy losses vs Collector Current  
VCE = 900V  
Transfert Characteristics  
100  
80  
60  
40  
20  
0
50  
TJ=25°C  
Eon  
VGE = 15V  
40  
30  
20  
10  
0
RG = 10  
TJ = 125°C  
TJ=125°C  
Eoff  
Er  
Er  
TJ=125°C  
0
20  
40  
60  
80  
100  
2000  
10  
5
6
7
8
9
10 11 12 13  
I
C (A)  
VGE (V)  
Switching Energy Losses vs Gate Resistance  
50  
Reverse Bias Safe Operating Area  
125  
100  
75  
50  
25  
0
VCE = 900V  
V
GE =15V  
40  
30  
20  
10  
0
Eon  
IC = 50A  
TJ = 125°C  
Eoff  
Er  
VGE=15V  
TJ=125°C  
RG=10Ω  
0
400  
800  
1200  
1600  
0
10 20 30 40 50 60 70 80  
VCE (V)  
Gate Resistance (ohms)  
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration  
0.45  
0.4  
0.35  
0.3  
IGBT  
0.9  
0.7  
0.25  
0.2  
0.15  
0.1  
0.05  
0
0.5  
0.3  
0.1  
0.05  
Single Pulse  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
rectangular Pulse Duration (Seconds)  
4 - 5  
APT website – http://www.advancedpower.com  
APTGT50H170T  
Operating Frequency vs Collector Current  
Forward Characteristic of diode  
30  
25  
20  
15  
10  
5
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VCE=900V  
D=50%  
RG=10  
ZCS  
TJ=25°C  
TJ=125°C  
TC=75°C  
ZVS  
TJ=125°C  
TJ=125°C  
hard  
switching  
0
0
0.5  
1
1.5  
F (V)  
2
2.5  
3
0
10 20 30 40 50 60 70 80  
C (A)  
V
I
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
Diode  
0.9  
0.7  
0.5  
0.3  
0.1  
Single Pulse  
0.05  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
rectangular Pulse Duration (Seconds)  
APT reserves the right to change, without notice, the specifications and information contained herein  
APT's products arecovered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522  
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.  
5 - 5  
APT website – http://www.advancedpower.com  

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