APTGT50H170T [ADPOW]
Full - Bridge Trench + Field Stop IGBT Power Module; 全 - 桥沟道+场站IGBT功率模块型号: | APTGT50H170T |
厂家: | ADVANCED POWER TECHNOLOGY |
描述: | Full - Bridge Trench + Field Stop IGBT Power Module |
文件: | 总5页 (文件大小:281K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
APTGT50H170T
Full - Bridge
Trench + Field Stop IGBT®
VCES = 1700V
IC = 50A @ Tc = 80°C
Application
VBUS
•
•
•
•
Welding converters
Q3
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Q1
G3
E3
G1
E1
Features
OUT1
OUT2
•
Trench + Field Stop IGBT® Technology
Q2
-
-
-
-
-
-
-
-
Low voltage drop
Q4
Low tail current
G4
E4
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
G2
E2
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
NTC1
NTC2
0/VBU S
•
•
Kelvin emitter for easy drive
Very low stray inductance
-
-
Symmetrical design
Lead frames for power connections
•
•
High level of integration
Internal thermistor for temperature monitoring
G3
G4
E4
OUT2
OUT1
E3
Benefits
•
•
•
•
•
•
•
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
VBUS
0/VBUS
E1
G1
E2
G2
NTC2
NTC1
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1700
V
TC = 25°C
TC = 80°C
TC = 25°C
75
50
100
±20
312
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C 100A @ 1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 - 5
APT website – http://www.advancedpower.com
APTGT50H170T
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1700V
250
2.4
µA
Tj = 25°C
Tj = 125°C
2.0
2.4
5.8
VGE = 15V
VCE(sat) Collector Emitter Saturation Voltage
V
IC = 50A
VGE(th) Gate Threshold Voltage
IGES
VGE = VCE , IC = 1mA
VGE = 20V, VCE = 0V
5.0
6.5
400
V
nA
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
4400
pF
Output Capacitance
180
150
370
40
650
180
400
50
Reverse Transfer Capacitance
Inductive Switching (25°C)
VGE = 15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
ns
VBus = 900V
IC = 50A
RG = 10 Ω
Inductive Switching (125°C)
VGE = 15V
ns
VBus = 900V
800
300
16
IC = 50A
Tf
Eon
Eoff
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
RG = 10 Ω
mJ
15
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
1700
V
Tj = 25°C
VR=1700V
250
500
IRM
µA
Tj = 125°C
IF(AV)
VF
Maximum Average Forward Current
Diode Forward Voltage
50% duty cycle
IF = 50A
Tc = 80°C
Tj = 25°C
Tj = 125°C
50
1.8
1.9
A
V
2.2
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
385
490
14
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 50A
VR = 900V
di/dt =800A/µs
Qrr
µC
23
2 - 5
APT website – http://www.advancedpower.com
APTGT50H170T
Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.4
RthJC
Junction to Case
°C/W
0.7
VISOL
TJ
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
3400
-40
-40
-40
1.5
V
150
125
100
4.7
°C
TSTG
TC
Operating Case Temperature
Torque Mounting torque
Wt
To Heatsink
M5
N.m
g
Package Weight
160
Package outline (dimensions in mm)
3 - 5
APT website – http://www.advancedpower.com
APTGT50H170T
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
100
80
60
40
20
0
100
90
80
70
60
50
40
30
20
10
0
VGE=20V
TJ = 125°C
TJ=25°C
TJ=125°C
VGE=13V
VGE=15V
VGE=9V
0
0.5
1
1.5
2
2.5
3
3.5
4
0
1
2
3
4
5
VCE (V)
VCE (V)
Energy losses vs Collector Current
VCE = 900V
Transfert Characteristics
100
80
60
40
20
0
50
TJ=25°C
Eon
VGE = 15V
40
30
20
10
0
RG = 10Ω
TJ = 125°C
TJ=125°C
Eoff
Er
Er
TJ=125°C
0
20
40
60
80
100
2000
10
5
6
7
8
9
10 11 12 13
I
C (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
50
Reverse Bias Safe Operating Area
125
100
75
50
25
0
VCE = 900V
V
GE =15V
40
30
20
10
0
Eon
IC = 50A
TJ = 125°C
Eoff
Er
VGE=15V
TJ=125°C
RG=10Ω
0
400
800
1200
1600
0
10 20 30 40 50 60 70 80
VCE (V)
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.45
0.4
0.35
0.3
IGBT
0.9
0.7
0.25
0.2
0.15
0.1
0.05
0
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
rectangular Pulse Duration (Seconds)
4 - 5
APT website – http://www.advancedpower.com
APTGT50H170T
Operating Frequency vs Collector Current
Forward Characteristic of diode
30
25
20
15
10
5
100
90
80
70
60
50
40
30
20
10
0
VCE=900V
D=50%
RG=10 Ω
ZCS
TJ=25°C
TJ=125°C
TC=75°C
ZVS
TJ=125°C
TJ=125°C
hard
switching
0
0
0.5
1
1.5
F (V)
2
2.5
3
0
10 20 30 40 50 60 70 80
C (A)
V
I
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Diode
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products arecovered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
5 - 5
APT website – http://www.advancedpower.com
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