APTM100H18F [ADPOW]
Full - Bridge MOSFET Power Module; 全 - 桥式MOSFET功率模块
| 型号： | APTM100H18F |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Full - Bridge MOSFET Power Module |
| 文件： | 总6页 (文件大小：309K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM100H18F
VDSS = 1000V
Full - Bridge
RDSon = 180mΩ max @ Tj = 25°C
MOSFET Power Module
ID = 43A @ Tc = 25°C
Application
VBUS
Q1
Q3
•
•
•
•
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
G1
S1
G3
S3
Features
Q2
Q4
•
Power MOS 7® FREDFETs
G2
S2
G4
S4
-
-
-
-
-
-
Low RDSon
Low input and Miller capacitance
Low gate charge
Fast intrinsic reverse diode
Avalanche energy rated
Very rugged
0/VBUS
•
•
Kelvin source for easy drive
Very low stray inductance
-
-
Symmetrical design
M5 power connectors
OUT1
OUT2
•
High level of integration
G1
G2
S2
VBUS
0/VBUS
S1
Benefits
S4
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
S3
G4
G3
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1000
V
Tc = 25°C
43
33
172
±30
180
780
ID
Continuous Drain Current
A
Tc = 80°C
IDM
VGS
RDSon
PD
Pulsed Drain current
Gate - Source Voltage
V
mΩ
W
Drain - Source ON Resistance
Maximum Power Dissipation
Tc = 25°C
IAR
EAR
EAS
Avalanche current (repetitive and non repetitive)
25
A
Repetitive Avalanche Energy
50
mJ
Single Pulse Avalanche Energy
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1 – 6
APTM100H18F
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 500µA
VGS = 0V,VDS = 1000V
1000
V
Tj = 25°C
Tj = 125°C
500
IDSS
Zero Gate Voltage Drain Current
µA
VGS = 0V,VDS = 800V
VGS = 10V, ID = 21.5A
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
2000
180
5
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
mΩ
V
nA
3
IGS S
Gate – Source Leakage Current
±150
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
10.4
VGS = 0V
VDS = 25V
f = 1MHz
nF
Output Capacitance
1.76
0.32
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
372
48
244
18
12
155
40
VGS = 10V
VBus = 500V
ID = 43A
nC
Gate – Source Charge
Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ns
ID = 43A
RG = 2.5Ω
Tf
Fall Time
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 43A, RG = 2.5Ω
Eon
Turn-on Switching Energy X
1800
1246
2846
1558
µJ
µJ
Eoff
Eon
Eoff
Turn-off Switching Energy Y
Turn-on Switching Energy X
Turn-off Switching Energy Y
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 43A, RG = 2.5Ω
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IS
Continuous Source current
Tc = 25°C
Tc = 80°C
43
A
(Body diode)
33
1.3
18
VSD
Diode Forward Voltage
VGS = 0V, IS = - 43A
V
V/ns
dv/dt Peak Diode Recovery Z
IS = - 43A
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
320
trr
Reverse Recovery Time
ns
VR = 500V
650
diS/dt = 200A/µs
IS = - 43A
7.2
Qrr
Reverse Recovery Charge
µC
VR = 500V
19.5
diS/dt = 200A/µs
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Z dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 43A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C
APT website – http://www.advancedpower.com
2 – 6
APTM100H18F
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RthJC
VISOL
TJ
Junction to Case
0.16 °C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
2500
-40
-40
-40
3
V
150
125
100
5
3.5
280
°C
TSTG
Storage Temperature Range
Operating Case Temperature
TC
To heatsink
For terminals
M6
M5
Torque Mounting torque
N.m
g
2
Wt
Package Weight
Package outline
APT website – http://www.advancedpower.com
3 – 6
APTM100H18F
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0.01
0.00001
0.0001
0.001
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
120
100
80
60
40
20
0
160
140
120
100
80
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
VGS=15, 10&8V
7V
6.5V
6V
60
TJ=25°C
40
5.5V
5V
20
TJ=125°C
TJ=-55°C
0
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
9
V
DS, Drain to Source Voltage (V)
V
GS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.4
1.3
1.2
1.1
1
45
40
35
30
25
20
15
10
5
Normalized to
GS=10V @ 21.5A
V
VGS=10V
VGS=20V
0.9
0.8
0
0
20
40
60
80
100 120
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
4 – 6
APTM100H18F
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
VGS=10V
ID=21.5A
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
100
10
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100µs
limited by RDSon
1ms
Single pulse
TJ=150°C
10ms
1
-50 -25
0
25 50 75 100 125 150
1
10
100
1000
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Gate Charge vs Gate to Source Voltage
14
12
10
8
ID=43A
TJ=25°C
VDS=200V
VDS=500V
Ciss
10000
1000
100
VDS=800V
Coss
6
4
Crss
2
0
0
100
200
300
400
500
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
APT website – http://www.advancedpower.com
5 – 6
APTM100H18F
Delay Times vs Current
Rise and Fall times vs Current
80
60
40
20
0
200
160
120
80
VDS=670V
tf
RG=2.5Ω
TJ=125°C
L=100µH
td(off)
VDS=670V
RG=2.5Ω
TJ=125°C
L=100µH
tr
40
td(on)
0
10
30
50
70
90
10
30
50
70
90
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
7
6
5
4
3
2
1
0
5
4
3
2
1
0
VDS=670V
ID=43A
Eoff
VDS=670V
RG=2.5Ω
TJ=125°C
L=100µH
Eon
TJ=125°C
L=100µH
Eoff
Eon
10
30
50
70
90
0
5
10
15
20
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
100
10
250
200
150
100
50
ZVS
ZCS
TJ=150°C
TJ=25°C
VDS=670V
D=50%
RG=2.5Ω
TJ=125°C
Tc=75°C
switching
Hard
1
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
10
15
20
25
30
35
40
ID, Drain Current (A)
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products arecovered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6 – 6
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