APTM20DUM05T [ADPOW]
Dual common source MOSFET Power Module; 双共源MOSFET功率模块
| 型号： | APTM20DUM05T |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Dual common source MOSFET Power Module |
| 文件： | 总3页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM20DUM05T
VDSS = 200V
RDSon = 5mΩ max @ Tj = 25°C
ID = 333A @ Tc = 25°C
Dual common source
MOSFET Power Module
Application
•
•
•
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
•
Power MOS V® MOSFETs
-
-
-
-
-
Low RDSon
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
•
•
•
Kelvin source for easy drive
Kelvin Drain for VDS monitoring
Very low stray inductance
-
-
Symmetrical design
M5 power connectors
DK1
NC
G1
SK1
NC
•
•
Internal thermistor for temperature monitoring
High level of integration
1
SK2
G2
Benefits
NC
DK2
NC
NTC1
NTC2
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals for signal and M5 for power for
easy PCB mounting
D2
S
D1
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
200
333
249
700
±30
5
V
Tc = 25°C
Tc = 80°C
ID
Continuous Drain Current
A
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
V
mΩ
W
PD
IAR
EAR
EAS
Maximum Power Dissipation
Tc = 25°C
1250
333
30
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
A
mJ
1300
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 - 3
APT website – http://www.advancedpower.com
APTM20DUM05T
Electrical Characteristics
Symbol Characteristic
All ratings @ Tj = 25°C unless otherwise specified
Test Conditions
Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 500µA
200
V
VGS = 0V,VDS = 200V
Tj = 25°C
300
2000
5
IDSS
Zero Gate Voltage Drain Current
µA
VGS = 0V,VDS = 160V
Tj = 125°C
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
IGSS
VGS = 10V, ID = 166.5A
VGS = VDS, ID = 8mA
VGS = ±30 V, VDS = 0V
mΩ
V
2
4
Gate – Source Leakage Current
±250 nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
40.8
9.1
3.1
V
GS = 0V
VDS = 25V
f = 1MHz
nF
Qg
Qgs
Qgd
Td(on)
Tr
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
1184
376
600
15
VGS = 10V
VBus = 100V
ID = 333A
nC
Resistive Switching
V
GS = 15V
25
VBus = 100V
ID = 333A
RG = 0.22 Ω
ns
Td(off) Turn-off Delay Time
Tf Fall Time
50
10
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IS
Continuous Source current
(Body diode)
Tc = 25°C
Tc = 80°C
333
249
A
VSD
trr
Diode Forward Voltage
VGS = 0V, IS = - 333A
IS = - 333A, VR = 100V
diS/dt = 800A/µs
IS = - 333A, VR = 100V
diS/dt = 800A/µs
1.3
V
Reverse Recovery Time
Reverse Recovery Charge
160
ns
Qrr
10.4
µC
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RthJC
Junction to Case
0.1 °C/W
RMS Isolation Voltage, any terminal to case
t =1 min, I isol<1mA, 50/60Hz
VISOL
2500
V
TJ
TSTG
TC
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
-40
-40
-40
2
150
125
100
3.5
3.5
550
°C
To heatsink
For terminals
M5
M5
Torque Mounting torque
Wt Package Weight
N.m
g
2
2 - 3
APT website – http://www.advancedpower.com
APTM20DUM05T
Temperature sensor NTC
Symbol Characteristic
Min Typ Max Unit
R25
Resistance @ 25°C
68
4080
kΩ
K
B 25/85 T25 = 298.16 K
R25
RT
=
T: Thermistor temperature
RT: Thermistor value at T
»
ÿ
Ÿ
⁄
≈
’
1
1
∆
÷
÷
exp B
−
…
25/ 85
∆
T25
T
«
◊
Package outline
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
3 - 3
APT website – http://www.advancedpower.com
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