APTM50HM75FT [ADPOW]
Full - Bridge MOSFET Power Module; 全 - 桥式MOSFET功率模块
| 型号： | APTM50HM75FT |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Full - Bridge MOSFET Power Module |
| 文件： | 总6页 (文件大小：300K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM50HM75FT
VDSS = 500V
Full - Bridge
RDSon = 75mꢀ max @ Tj = 25°C
MOSFET Power Module
ID = 46A @ Tc = 25°C
Application
VBUS
Sꢁ Welding converters
Q1
Q3
Sꢁ Switched Mode Power Supplies
Sꢁ Uninterruptible Power Supplies
G3
S3
G1
S1
Features
Sꢁ Power MOS 7® FREDFETs
OUT1
OUT2
-
-
-
-
-
-
Low RDSon
Q2
Q4
Low input and Miller capacitance
Low gate charge
Fast intrinsic reverse diode
Avalanche energy rated
Very rugged
G4
S4
G2
S2
Sꢁ Kelvin source for easy drive
Sꢁ Very low stray inductance
NTC1
0/VBUS
NTC2
-
-
Symmetrical design
Lead frames for power connections
Sꢁ Internal thermistor for temperature monitoring
Sꢁ High level of integration
G3
S3
G4
S4
OUT2
OUT1
Benefits
Sꢁ Outstanding performance at high frequency operation
Sꢁ Direct mounting to heatsink (isolated package)
Sꢁ Low junction to case thermal resistance
Sꢁ Solderable terminals both for power and signal for
easy PCB mounting
VBUS
0/VBUS
S1
G1
S2
G2
NTC2
NTC1
Sꢁ Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
Continuous Drain Current
500
46
V
Tc = 25°C
Tc = 80°C
ID
A
34
IDM
VGS
Pulsed Drain current
184
±30
75
Gate - Source Voltage
Drain - Source ON Resistance
V
mꢀ
W
RDSon
PD
IAR
EAR
EAS
Maximum Power Dissipation
Tc = 25°C
357
46
50
2500
Avalanche current (repetitive and non repetitive)
A
Repetitive Avalanche Energy
mJ
Single Pulse Avalanche Energy
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 – 6
APT website – http://www.advancedpower.com
APTM50HM75FT
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 250µA
500
V
VGS = 0V,VDS = 500V Tj = 25°C
VGS = 0V,VDS = 400V Tj = 125°C
VGS = 10V, ID = 23A
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
250
1000
75
IDSS
Zero Gate Voltage Drain Current
µA
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
mꢀ
V
3
5
IGSS
Gate – Source Leakage Current
±100 nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
5600
VGS = 0V
VDS = 25V
f = 1MHz
pF
Output Capacitance
1200
90
Reverse Transfer Capacitance
Qg
Qgs
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
123
33
65
18
35
87
77
VGS = 10V
VBus = 250V
ID = 46A
nC
Qgd
Td(on)
Tr
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ns
Td(off) Turn-off Delay Time
Tf
ID = 46A
RG = 5ꢀ
Fall Time
Inductive switching @ 25°C
Eon
Turn-on Switching Energy ꢀ
755
726
V
GS = 15V, VBus = 333V
µJ
µJ
Eoff
Eon
Eoff
Turn-off Switching Energy ꢀ
Turn-on Switching Energy ꢀ
Turn-off Switching Energy ꢀ
ID = 46A, RG = 5Ω
Inductive switching @ 125°C
1241
846
V
GS = 15V, VBus = 333V
ID = 46A, RG = 5Ω
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IS
Continuous Source current
Tc = 25°C
Tc = 80°C
46
A
(Body diode)
34
1.3
15
VSD
Diode Forward Voltage
VGS = 0V, IS = - 46A
V
V/ns
dv/dt Peak Diode Recovery ꢁ
IS = - 46A
Tj = 25°C
Tj = 125°C
Tj = 25°C
233
499
1.9
trr
Reverse Recovery Time
ns
VR = 250V
diS/dt = 100A/µs
IS = - 46A
Qrr
Reverse Recovery Charge
µC
VR = 250V
Tj = 125°C
5.7
diS/dt = 100A/µs
ꢀ Eon includes diode reverse recovery.
ꢀ In accordance with JEDEC standard JESD24-1.
ꢁ dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ? - 46A di/dt ? 700A/µs
VR ? VDSS Tj ? 150°C
2 – 6
APT website – http://www.advancedpower.com
APTM50HM75FT
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RthJC
VISOL
TJ
Junction to Case
0.35 °C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
V
150
125
100
4.7
°C
TSTG
-40
TC
Operating Case Temperature
-40
Torque Mounting torque
To Heatsink
M5
N.m
g
Wt
Package Weight
160
Temperature sensor NTC
Symbol Characteristic
Min Typ Max Unit
R25
Resistance @ 25°C
68
kꢀ
B25/85 T25 = 298.16 K
4080
K
R25
RT
ꢃ
T: Thermistor temperature
RT: Thermistor value at T
!
1
2
3
ꢁ
.
/
/
1
1
T
25 / 85 ꢀ
exp B
ꢂ
"
ꢀ
T25
0
#
Package outline
3 – 6
APT website – http://www.advancedpower.com
APTM50HM75FT
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4
0.35
0.3
0.9
0.7
0.5
0.25
0.2
0.15
0.1
0.3
0.1
0.05
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
120
180
160
140
120
100
80
60
40
20
0
VDS > ID(on)xRDS(on)MAX
100 250µs pulse test @ < 0.5 duty cycle
8V
VGS=10&15V
7.5V
80
60
7V
6.5V
6V
40
TJ=25°C
20
TJ=125°C
5.5V
TJ=-55°C
0
0
5
10
15
20
25
0
1
2
3
4
5
6
7
8
V
DS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
RDS(on) vs Drain Current
DC Drain Current vs Case Temperature
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
50
40
30
20
10
0
Normalized to
VGS=10V @ 23A
VGS=10V
VGS=20V
0
20
40
60
80
100
25
50
75
100
125
150
TC, Case Temperature (°C)
ID, Drain Current (A)
4 – 6
APT website – http://www.advancedpower.com
APTM50HM75FT
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID=23A
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
1.2
1.1
1.0
0.9
0.8
0.7
0.6
limited by RDSon
100
10
1
100µs
1ms
10ms
Single pulse
TJ=150°C
100ms
0.1
-50 -25
0
25 50 75 100 125 150
1
10
100
1000
TC, Case Temperature (°C)
V
DS, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
Gate Charge vs Gate to Source Voltage
14
100000
10000
1000
100
VCE=100V
VCE=250V
ID=46A
TJ=25°C
12
10
8
Ciss
VCE=400V
Coss
6
Crss
4
2
10
0
0
10
20
30
40
50
0
20 40 60 80 100 120 140 160
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
5 – 6
APT website – http://www.advancedpower.com
APTM50HM75FT
Delay Times vs Current
Rise and Fall times vs Current
100
80
60
40
20
0
120
100
80
60
40
20
0
td(off)
VDS=333V
RG=5Ω
TJ=125°C
L=100µH
tf
VDS=333V
RG=5Ω
TJ=125°C
L=100µH
td(on)
60
tr
10
20
30
40
50
70
10
20
30
40
50
60
70
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
4
3.5
3
2.5
2
VDS=333V
RG=5Ω
VDS=333V
Eon
ID=46A
TJ=125°C
L=100µH
Eoff
TJ=125°C
L=100µH
2.5
2
1.5
1
Eoff
Eon
1.5
1
0.5
0
0.5
0
0
10
20
30
40
50
10
20
30
40
50
60
70
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
100
10
400
350
300
250
200
150
100
50
VDS=333V
D=50%
RG=5Ω
TJ=125°C
TJ=150°C
TJ=25°C
0
1
10
15
20
25
30
35
40
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
ID, Drain Current (A)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
6 – 6
APT website – http://www.advancedpower.com
相关型号：
©2020 ICPDF网 联系我们和版权申明