APTM50HM75FTG [MICROSEMI]
Full - Bridge MOSFET Power Module; 全 - 桥式MOSFET功率模块
| 型号： | APTM50HM75FTG |
| 厂家： | 
Microsemi |
| 描述： | Full - Bridge MOSFET Power Module |
| 文件： | 总6页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM50HM75FTG
VDSS = 500V
Full - Bridge
RDSon = 75mΩ typ @ Tj = 25°C
MOSFET Power Module
ID = 46A @ Tc = 25°C
Application
VBUS
•
Welding converters
Q1
Q3
•
•
Switched Mode Power Supplies
Uninterruptible Power Supplies
G3
S3
G1
S1
Features
•
Power MOS 7® FREDFETs
OUT1
OUT2
-
-
-
-
-
-
Low RDSon
Q2
Q4
Low input and Miller capacitance
Low gate charge
Fast intrinsic reverse diode
Avalanche energy rated
Very rugged
G4
S4
G2
S2
•
•
Kelvin source for easy drive
Very low stray inductance
NT C1
0/VBUS
NTC2
-
-
Symmetrical design
Lead frames for power connections
•
•
Internal thermistor for temperature monitoring
High level of integration
G3
S3
G4
S4
OUT2
OUT1
Benefits
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
VBUS
0/VBUS
S1
G1
S2
G2
NTC2
NTC1
•
•
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
46
34
184
±30
90
357
46
50
2500
ID
Continuous Drain Current
A
Tc = 80°C
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
V
mΩ
W
PD
IAR
EAR
EAS
Maximum Power Dissipation
Tc = 25°C
Avalanche current (repetitive and non repetitive)
A
Repetitive Avalanche Energy
mJ
Single Pulse Avalanche Energy
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1 – 6
APTM50HM75FTG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 500V Tj = 25°C
100
500
90
5
±100
IDSS
Zero Gate Voltage Drain Current
µA
VGS = 0V,VDS = 400V Tj = 125°C
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
IGS S
VGS = 10V, ID = 23A
75
mΩ
V
nA
VGS = VDS, ID = 2.5mA
3
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
5600
VGS = 0V
VDS = 25V
f = 1MHz
pF
Output Capacitance
1200
90
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
123
33
65
18
35
87
77
VGS = 10V
VBus = 250V
ID = 46A
nC
Gate – Source Charge
Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ns
ID = 46A
RG = 5Ω
Tf
Fall Time
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 46A, RG = 5Ω
Eon
Turn-on Switching Energy
755
726
µJ
µJ
Eoff
Eon
Eoff
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 46A, RG = 5Ω
1241
846
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IS
Continuous Source current
Tc = 25°C
Tc = 80°C
46
A
(Body diode)
34
1.3
15
VSD
Diode Forward Voltage
VGS = 0V, IS = - 46A
V
dv/dt Peak Diode Recovery X
V/ns
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
233
499
1.9
5.7
trr
Reverse Recovery Time
ns
IS = - 46A
VR = 333V
diS/dt = 100A/µs
Qrr
Reverse Recovery Charge
µC
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 46A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C
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2 – 6
APTM50HM75FTG
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RthJC
VISOL
TJ
Junction to Case Thermal Resistance
0.35 °C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
2.5
V
150
125
100
4.7
°C
TSTG
TC
Operating Case Temperature
Torque Mounting torque
To Heatsink
M5
N.m
g
Wt
Package Weight
160
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
SP4 Package outline (dimensions in mm)
ALL DIMENSIONSMARKED " * " ARE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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3 – 6
APTM50HM75FTG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4
0.35
0.3
0.9
0.7
0.5
0.25
0.2
0.15
0.1
0.3
0.1
0.05
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
120
100
80
60
40
20
0
180
160
140
120
100
80
60
40
20
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
8V
VGS=10&15V
7.5V
7V
6.5V
6V
TJ=25°C
TJ=125°C
5.5V
TJ=-55°C
0
5
10
15
20
25
0
1
2
3
4
5
6
7
8
VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
RDS(on) vs Drain Current
DC Drain Current vs Case Temperature
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
50
40
30
20
10
0
Normalized to
GS=10V @ 23A
VGS=10V
V
VGS=20V
0
20
40
60
80
100
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
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4 – 6
APTM50HM75FTG
ON resistance vs Temperature
2.5
1.2
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID=23A
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
100
10
1.2
1.1
1.0
0.9
0.8
0.7
0.6
limited by R
DSon
100µs
Single pulse
TJ=150°C
TC=25°C
1ms
10ms
1
-50 -25
0
25 50 75 100 125 150
1
10
100
1000
TC, Case Temperature (°C)
VDS, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
Gate Charge vs Gate to Source Voltage
14
100000
10000
1000
100
VDS=100V
ID=46A
TJ=25°C
12
10
8
VDS=250V
Ciss
VDS=400V
Coss
6
Crss
4
2
10
0
0
10
20
30
40
50
0
20 40 60 80 100 120 140 160
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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5 – 6
APTM50HM75FTG
Delay Times vs Current
Rise and Fall times vs Current
100
80
60
40
20
0
120
td(off)
VDS=333V
RG=5Ω
TJ=125°C
L=100µH
100
80
60
40
20
0
tf
VDS=333V
RG=5Ω
TJ=125°C
L=100µH
td(on)
60
tr
10
20
30
40
50
70
10
20
30
40
50
60
70
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
4
3.5
3
2.5
2
VDS=333V
RG=5Ω
VDS=333V
Eon
ID=46A
TJ=125°C
L=100µH
Eoff
TJ=125°C
L=100µH
2.5
2
1.5
1
Eoff
Eon
1.5
1
0.5
0
Eoff
0.5
0
0
10
20
30
40
50
10
20
30
40
50
60
70
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
100
10
400
350
300
250
200
150
100
50
VDS=333V
D=50%
RG=5Ω
ZVS
ZCS
TJ=125°C
TC=75°C
TJ=150°C
TJ=25°C
hard
switching
0
1
10
15
20
25
30
35
40
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
ID, Drain Current (A)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6 – 6
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