AMMC-5618-W50 [AGILENT]
6 - 20 GHz Amplifier; 6 - 20 GHz的放大器
| 型号： | AMMC-5618-W50 |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | 6 - 20 GHz Amplifier |
| 文件： | 总8页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Agilent AMMC-5618
6 - 20 GHz Amplifier
Data Sheet
Chip Size:
920 x 920 µm (36.2 x 36.2 mils)
100 ± 10µm (4 ± 0.4 mils)
Chip Size Tolerance:± 10µm (± 0.4 mils)
Chip Thickness:
Pad Dimensions: 80 x 80 µm (3.1 x 3.1 mils or larger)
Description
Agilent’s AMMC-5618 6−20 GHz
MMIC is an efficient two-stage
amplifier designed to be used as
a cascadable intermediate gain
block for EW applications. In
communication systems, it can
be used as a LO buffer, or as a
transmit driver amplifier. It is
fabricated using a PHEMT
Features
Applications
• Frequency Range: 6 − 20 GHz
• High Gain: 14.5 dB Typical
• Output Power: 19.5 dBm Typical
• Driver/Buffer in microwave
communication systems
• Cascadable gain stage for EW
systems
• Input and Output Return Loss: < -12
dB
• Phased array radar and transmit
amplifiers
• Flat Gain Response: ± 0.3 dB Typical
integrated circuit structure that
provides exceptional efficiency
and flat gain performance.
During typical operation with a
single 5-V supply, each gain
stage is biased for Class-A
operation for optimal power
output with minimal distortion.
The RF input and output have
matching circuitry for use in
50-Ω environments. The
backside of the chip is both RF
and DC ground. This helps
simplify the assembly process
and reduces assembly related
performance variations and
costs. The MMIC is a cost
• Single Supply Bias: 5 V @ 107 mA
[1]
AMMC-5618 Absolute Maximum Ratings
Symbol
Parameters/Conditions
Drain Supply Voltage
Optional Gate Voltage
Optional Gate Voltage
Drain Supply Current
Drain Supply Current
RF Input Power
Units
V
Min.
Max.
7
V
V
V
,V
D1 D2
V
-5
-5
+1
G1
G2
V
+1
I
I
mA
mA
dBm
°C
70
D1
D2
84
P
20
in
T
Channel Temp.
+150
ch
T
Operating Backside Temp.
Storage Temp.
°C
-55
-65
b
T
°C
+165
+300
stg
effective alternative to hybrid
(discrete FET) amplifiers that
require complex tuning and
assembly processes.
T
Maximum Assembly Temp. (60 sec max) °C
max
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
Note: These devices are ESD sensitive. The following precautions are strongly recommended:
Ensure that an ESD approved carrier is used when dice are transported from one destination to another.
Personal grounding is to be worn at all times when handling these devices.
[1]
AMMC-5618 DC Specifications / Physical Properties
Symbol
,V
Parameters and Test Conditions
Recommended Drain Supply Voltage
First stage Drain Supply Current
Unit
V
Min.
Typical Max.
V
3
5
7
D1 D2
I
I
I
mA
48
D1
(V = 5V, V = Open or Ground)
D1
G1
Second stage Drain Supply Current
(V = 5V, V = Open or Ground)
mA
59
D2
D1
D2
G2
+ I
Total Drain Supply Current
(V = V = Open or Ground, V = V = 5 V)
mA
107
22
140
D2
G1
G2
D1
D2
[2]
θ
Thermal Resistance
(Backside temperature (T ) = 25°C
°C/W
ch-b
b
Notes:
1. Backside temperature Tb = 25°C unless otherwise noted
2. Channel-to-backside Thermal Resistance (θch-b) = 32°C/W at Tchannel (Tc) = 150°C as measured using infrared microscopy.
Thermal Resistance at backside temperature (Tb) = 25°C calculated from measured data.
[3]
AMMC-5618 RF Specifications
(Tb = 25°C, V = 5 V, I = 107 mA, Z = 50 Ω.)
DD
DD
0
Symbol
Parameters and Test Conditions
Small-signal Gain
Unit
dB
Min.
Typical Max.
2
|S |
12.5
14.5
± 0.3
12
21
2
∆|S |
Small-signal Gain Flatness
dB
21
RL
RL
Input Return Loss
dB
9
in
Output Return Loss
dB
9
12
out
2
|S |
Isolation
dB
-40
17.5
19
-45
12
P
P
Output Power at 1dB Gain Compression @ 20 GHz
Saturated Output Power (3dB Gain Compression) @ 20 GHz
Output 3rd Order Intercept Point @ 20 GHz
dBm
dBm
dBm
dB/°C
dB
19.5
20.5
26
-1dB
sat
OIP3
[2]
∆S / ∆T
Temperature Coefficient of Gain
-0.023
21
NF
Noise Figure @ 20 GHz
4.4
6.5
Notes:
3. 100% on-wafer RF test is done at frequency = 6, 13 and 20 GHz, except as noted.
4. Temperature Coefficient of Gain based on sample test
2
AMMC-5618 Typical Performance (T
=25°C, V =5V, I = 107 mA, Zo=50Ω)
DD DD
chuck
18
15
12
9
0
-10
-20
-30
-40
-50
-60
-70
0
-5
-10
-15
-20
-25
6
3
0
4
7
10
13
16
19
22
4
7
10
13
16
19
22
4
7
10
13
16
19
22
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 1. Gain
Figure 2. Isolation
Figure 3. Input Return Loss
0
-5
10
8
24
20
16
12
8
-10
-15
-20
-25
-30
6
4
2
4
0
0
4
7
10
13
16
19
22
4
7
10
13
16
19
22
4
7
10
13
16
19
22
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Return Loss
Figure 5. Noise Figure
Figure 6. Output Power at 1 dB Gain Compres-
sion
AMMC-5618 Typical Performance vs. Supply Voltage (Tb=25°C, Zo=50Ω)
18
15
12
9
0
-10
-20
-30
-40
-50
-60
0
-5
Vdd=4V
Vdd=5V
Vdd=6V
-10
-15
Vdd=4V
Vdd=5V
Vdd=6V
6
-20
Vdd=4V
Vdd=5V
Vdd=6V
3
-25
-30
0
4
7
10
13
16
19
22
4
7
10
13
16
19
22
4
7
10
13
16
19
22
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 7. Gain and Voltage
Figure 8. Isolation and Voltage
Figure 9. Input Return Loss and Voltage
3
AMMC-5618 Typical Performance vs. Supply Voltage (cont.) (Tb=25°C, Zo=50Ω)
0
-5
25
20
15
10
5
Vdd=4V
Vdd=5V
Vdd=6V
-10
-15
-20
-25
-30
-35
Vdd=4V
Vdd=5V
Vdd=6V
0
4
7
10
13
16
19
22
4
7
10
13
16
19
22
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 10. Output Return Loss and Voltage
Figure 11. Output Power and Voltage
AMMC-5618 Typical Performance vs. Temperature (V =5V, Zo=50Ω)
DD
25
20
15
10
5
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40 C
25 C
85 C
Vdd=4V
Vdd=5V
Vdd=6V
-40 C
25 C
85 C
0
4
7
10
13
16
19
22
4
7
10
13
16
19
22
4
7
10
13
16
19
22
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 12. Gain and Temperature
Figure 13. Isolation and Temperature
Figure 14. Input Return Loss and Temperature
0
8
7
6
5
4
3
2
25
20
15
-40 C
25 C
85 C
-5
-10
-15
-20
-25
10
-40 C
25 C
85 C
-40 C
25 C
85 C
5
0
1
0
4
7
10
13
16
19
22
4
7
10
13
16
19
22
4
7
10
13
16
19
22
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 15. Output Return Loss and Temperature
Figure 16. Noise Figure and Temperature
Figure 17. Output Power and Temperature
4
[1]
AMMC-5618 Typical Scattering Parameters (Tb=25°C, V = 5 V, I = 107 mA)
DD
DD
S11
Mag
0.76
0.72
0.69
0.66
0.63
0.57
0.43
0.23
0.1
S21
Mag
0
S12
Mag
0
S22
Mag
0.95
0.91
0.84
0.75
0.64
0.55
0.45
0.37
0.31
0.27
0.23
0.2
Freq GHz
dB
Phase
-125
-147
-166
174
152
126
94
dB
-52.0
-35.4
-19.0
-7.4
Phase
74
dB
Phase
-134
-57
-65
-60
-104
-113
-142
-170
161
142
127
115
103
95
dB
Phase
-77
2.00
-2.4
-80.0
-74.0
-69.1
-59.1
-57.7
-51.8
-48.8
-45.7
-44.5
-44.6
-44.3
-44.0
-43.9
-43.6
-43.3
-43.2
-43.1
-42.9
-42.8
-42.5
-42.5
-42.3
-42.1
-41.9
-41.7
-41.6
-41.4
-41.3
-41.1
-40.8
-40.8
-40.8
-40.5
-40.4
-40.3
-40.1
-39.9
-39.9
-40.0
-39.8
-40.3
-0.4
2.50
-2.9
0.02
0.11
0.43
1.09
2.43
4.2
-119
-102
-120
-147
178
138
94
0
-0.9
-97
3.00
-3.2
0
-1.6
-118
-138
-156
-173
172
160
151
141
130
120
109
98
3.50
-3.6
0
-2.6
4.00
-4.0
0.8
0
-3.8
4.50
-4.9
7.7
0
-5.3
5.00
-7.3
12.5
14.7
15.1
15.1
15.0
15.0
14.9
14.9
14.9
14.8
14.8
14.7
14.7
14.7
14.6
14.6
14.6
14.6
14.7
14.7
14.7
14.8
14.9
14.9
15.0
15.1
15.1
15.2
15.2
15.2
15.0
14.8
14.5
14.1
13.5
0
-6.9
5.50
-12.7
-19.8
-23.6
-24.7
-26.4
-28.2
-26.3
-22.8
-19.9
-17.7
-16.1
-14.8
-13.9
-13.2
-12.6
-12.2
-11.9
-11.6
-11.5
-11.4
-11.4
-11.5
-11.7
-11.9
-12.2
-12.4
-12.4
-12.2
-11.5
-10.5
-9.2
67
5.41
5.69
5.69
5.64
5.61
5.59
5.57
5.55
5.52
5.49
5.45
5.43
5.41
5.38
5.37
5.37
5.38
5.4
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
-8.6
6.00
66
60
-10.1
-11.3
-12.6
-13.9
-15.3
-16.7
-18.2
-19.7
-21.4
-22.8
-24.3
-25.1
-25.1
-24.5
-23.3
-22.2
-21.3
-20.7
-19.8
-19.1
-18.4
-17.7
-17.2
-16.7
-16.2
-15.8
-15.4
-14.9
-14.6
-14.0
-13.8
-13.5
-13.1
6.50
0.07
0.06
0.05
0.04
0.05
0.07
0.1
85
34
7.00
87
13
7.50
68
-5
8.00
28
-22
-37
-51
-65
-77
-90
-101
-113
-124
-134
-145
-155
-166
-176
174
163
153
142
131
120
109
97
0.17
0.15
0.12
0.1
8.50
-23
-55
-74
-88
-100
-110
-120
-128
-136
-143
-151
-159
-166
-174
177
168
157
146
132
116
98
9.00
86
87
9.50
77
74
10.00
10.50
11.00
11.50
12.00
12.50
13.00
13.50
14.00
14.50
15.00
15.50
16.00
16.50
17.00
17.50
18.00
18.50
19.00
19.50
20.00
20.50
21.00
21.50
22.00
Note:
0.13
0.16
0.18
0.2
70
0.09
0.07
0.06
0.06
0.06
0.06
0.07
0.08
0.09
0.09
0.1
60
63
43
57
23
52
1
0.22
0.23
0.25
0.26
0.26
0.27
0.27
0.27
0.27
0.26
0.25
0.25
0.24
0.24
0.25
0.27
0.3
45
-22
40
-44
34
-60
31
-73
24
-85
5.42
5.46
5.49
5.54
5.58
5.63
5.66
5.71
5.75
5.75
5.73
5.65
5.51
5.31
5.05
4.72
19
-95
15
-105
-113
-121
-126
-132
-138
-143
-148
-154
-158
-163
-166
-172
-176
179
9
0.11
0.12
0.13
0.14
0.15
0.16
0.16
0.17
0.18
0.19
0.2
3
0
-7
-12
-16
-23
-29
-35
-42
-48
-55
-63
-72
77
85
56
73
34
60
0.35
0.4
14
46
-7.9
-5
33
0.2
-6.7
0.46
0.52
-21
-36
19
0.21
0.22
-5.7
5
1. Data obtained from on-wafer measurements
5
Biasing and Operation
Assembly Techniques
76 ± 8 mS. A guided wedge at an
ultrasonic power level of 64 dB
can be used for the 0.7 mil wire.
The recommended wire bond
stage temperature is 150 ± 2° C.
The AMMC-5618 is normally
biased with a single positive
drain supply connected to both
The backside of the AMMC-5618
chip is RF ground. For
microstripline applications, the
chip should be attached directly
to the ground plane (e.g., circuit
V
and V bond pads as
D1
D2
shown in Figure 19(a). The
recommended supply voltage is
3 to 5 V.
carrier or heatsink) using
electrically conductive epoxy
[1]
Caution should be taken to not
exceed the Absolute Maximum
Rating for assembly temperature
and time.
.
No ground wires are required
because all ground connections
are made with plated through-
holes to the backside of the
device.
For best performance, the
topside of the MMIC should be
brought up to the same height
as the circuit surrounding it.
This can be accomplished by
mounting a gold plated metal
shim (same length and width as
the MMIC) under the chip,
which is of the correct
The chip is 100 µm thick and
should be handled with care. This
MMIC has exposed air bridges on
the top surface and should be
handled by the edges or with a
custom collet (do not pick up die
with vacuum on die center.)
Gate bias pads (V & V ) are
G1
G2
also provided to allow
adjustments in gain, RF output
power, and DC power
thickness to make the chip and
adjacent circuit coplanar.
dissipation, if necessary. No
connection to the gate pad is
needed for single drain-bias
operation. However, for custom
applications, the DC current
flowing through the input and/
or output gain stage may be
adjusted by applying a voltage
This MMIC is also static
sensitive and ESD handling
precautions should be taken.
The amount of epoxy used for
chip and or shim attachment
should be just enough to
provide a thin fillet around the
bottom perimeter of the chip or
shim. The ground plane should
Notes:
1. Ablebond 84-1 LM1 silver epoxy is
recommended.
2. Buckbee-Mears Corporation, St. Paul, MN,
800-262-3824
to the gate bias pad(s) as shown be free of any residue that may
in Figure 19(b). A negative gate- jeopardize electrical or
pad voltage will decrease the
drain current. The gate-pad
voltage is approximately zero
volt during operation with no
DC gate supply. Refer to the
Absolute Maximum Ratings
table for allowed DC and
thermal conditions.
mechanical attachment.
The location of the RF bond
pads is shown in Figure 20.
Note that all the RF input and
output ports are in a Ground-
Signal-Ground configuration.
RF connections should be kept
as short as reasonable to
minimize performance
degradation due to undesirable
series inductance. A single bond
wire is sufficient for signal
connections, however double-
bonding with 0.7 mil gold wire
[2]
or the use of gold mesh is
recommended for best
performance, especially near the
high end of the frequency range.
Thermosonic wedge bonding is
the preferred method for wire
attachment to the bond pads.
Gold mesh can be attached using
a 2 mil round tracking tool and a
tool force of approximately 22
grams with an ultrasonic power
of roughly 55 dB for a duration of
6
VD1
VD2
Feedback
Network
Matching
Matching
RF Output
Matching
RF Input
VG1
VG2
Figure 18. AMMC-5618 Schematic
To power supply
To power supply
100 pF chip capacitor
100 pF chip capacitor
gold plated shim
gold plated shim
RF Input
RF Output
RF Input
RF Output
Bonding island
or small
chip-capacitor
To VG1 power supply
To VG2 power supply
(a)
Figure 19. AMMC-5618 Assembly Diagram
(b)
7
0
143
Vd1
355
GND
573
Vd2
920
530
530
RF
RF
0
0
Vg2
593
Vg1
0
79
920
Figure 20. AMMC-5618 Bond pad locations (dimensions in microns)
Ordering Information:
AMMC-5618-W10 = waffle pack, 10 devices per tray
AMMC-5618-W50 = waffle pack, 50 devices per tray
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
Data subject to change.
Copyright 2003 Agilent Technologies, Inc.
February 12, 2004
5989-0532EN
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