MSA-0870 [AGILENT]

Cascadable Silicon Bipolar MMIC Amplifier; 级联硅双极MMIC放大器
MSA-0870
元器件型号: MSA-0870
生产厂家: AGILENT TECHNOLOGIES, LTD.    AGILENT TECHNOLOGIES, LTD.
描述和应用:

Cascadable Silicon Bipolar MMIC Amplifier
级联硅双极MMIC放大器

射频和微波射频放大器微波放大器
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型号参数:MSA-0870参数
是否Rohs认证符合
生命周期Transferred
IHS 制造商AGILENT TECHNOLOGIES INC
包装说明SL,4LEAD,.07SQ
Reach Compliance Codeunknown
风险等级5.17
Is SamacsysN
特性阻抗50 Ω
构造COMPONENT
增益22 dB
最大输入功率 (CW)13 dBm
安装特点SURFACE MOUNT
端子数量4
最大工作频率4000 MHz
最小工作频率100 MHz
封装主体材料CERAMIC
封装等效代码SL,4LEAD,.07SQ
电源7.8 V
射频/微波设备类型WIDE BAND LOW POWER
子类别RF/Microwave Amplifiers
最大压摆率40 mA
表面贴装YES
技术BIPOLAR
最大电压驻波比1.9
Base Number Matches1
MAX34334CSE前5页PDF页面详情预览
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-0870
Features
• Usable Gain to 6.0 GHz
• High Gain:
32.5 dB Typical at 0.1 GHz
23.5 dB Typical at 1.0 GHz
• Low Noise Figure:
3.0 dB Typical at 1.0 GHz
• Hermetic Gold-ceramic
Microstrip Package
purpose 50
gain block above
0.5 GHz and can be used as a high
gain transistor below this fre-
quency. Typical applications
include narrow and moderate band
IF and RF amplifiers in industrial
and military applications.
70 mil Package
Description
The MSA-0870 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic, high
reliability package. This MMIC is
designed for use as a general
The MSA-series is fabricated using
HP’s 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R
bias
V
CC
>
10
V
RFC (Optional)
4
C
block
3
IN
1
MSA
C
block
OUT
V
d
= 7.8 V
2
5965-9544E
6-418
MSA-0870 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
[1]
80 mA
750 mW
+13 dBm
200°C
–65°C to 200°C
Thermal Resistance
[2,4]
:
θ
jc
= 150°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 6.7 mW/°C for T
C
> 88°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of
θ
jc
than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol
G
P
Parameters and Test Conditions: I
d
= 36 mA, Z
O
= 50
Power Gain (|S
21
|
2
)
f = 0.1 GHz
f = 1.0 GHz
f = 4.0 GHz
f = 1.0 to 3.0 GHz
f = 1.0 to 3.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
Units
dB
Min.
22.0
Typ.
32.5
23.5
11.0
2.0:1
1.9:1
Max.
25.0
12.0
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
Input VSWR
Output VSWR
50
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
dB
dBm
dBm
psec
V
mV/°C
7.0
3.0
12.5
27.0
125
7.8
–17.0
8.4
Note:
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current
is on the following page.
6-419
MSA-0870 Typical Scattering Parameters
[1]
(Z
O
= 50
Ω,
T
A
= 25°C, I
d
= 36 mA)
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
k
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
.65
.60
.48
.40
.35
.32
.29
.30
.31
.32
.34
.34
.33
.39
–19
–35
–60
–76
–88
–102
–118
–133
–139
–149
–159
–168
161
128
32.5
31.5
29.1
26.8
24.9
23.4
20.1
17.6
15.6
13.8
12.2
10.8
8.4
6.2
42.04
37.54
28.49
21.90
17.48
14.85
10.14
7.55
6.01
4.87
4.09
3.48
2.63
2.04
161
145
122
108
97
87
70
56
49
39
28
17
–3
–22
–36.3
–33.7
–30.5
–28.0
–26.2
–24.9
–23.0
–21.9
–20.0
–19.5
–18.4
–17.7
–16.6
–16.2
.015
.021
.030
.040
.049
.057
.071
.081
.100
.106
.121
.131
.147
.155
40
47
51
50
50
51
47
45
46
41
35
31
21
10
.64
.58
.47
.38
.33
.28
.22
.16
.12
.07
.07
.12
.19
.21
–22
–43
–74
–97
–113
–128
–151
–167
–172
–170
–143
–112
–103
–115
0.78
0.66
0.64
0.72
0.78
0.83
0.91
0.98
1.02
1.11
1.12
1.16
1.26
1.36
Note:
1. A model for this device is available in the DEVICE MODELS section.
Typical Performance, T
A
= 25°C
(unless otherwise noted)
35
30
Gain Flat to DC
25
30
40
T
C
= +125°C
T
C
= +25°C
T
C
= –55°C
35
0.1 GHz
30
0.5 GHz
25
G
p
(dB)
G
p
(dB)
I
d
(mA)
20
15
10
1.0 GHz
20
2.0 GHz
15
20
10
5
0
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
0
0
2
4
6
V
d
(V)
8
10
10
5
10
4.0 GHz
20
30
I
d
(mA)
40
Figure 1. Typical Power Gain vs.
Frequency, I
d
= 36 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
24
16
I
d
= 40 mA
14
G
P
13
12
P
1 dB
11
10
12
10
8
I
d
= 36 mA
4.5
I
d
= 20 mA
I
d
= 36 mA
I
d
= 40 mA
Gp (dB)
23
22
21
4.0
P
1 dB
(dBm)
P
1 dB
(dBm)
NF (dB)
I
d
= 20 mA
0.2 0.3
0.5
1.0
2.0
4.0
3.5
3.0
NF (dB)
4
3
2
–55 –25
+25
+85
NF
6
+125
4
0.1
2.5
0.1
0.2 0.3
0.5
1.0
2.0
FREQUENCY (GHz)
FREQUENCY (GHz)
TEMPERATURE (°C)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
d
=36mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-420
70 mil Package Dimensions
.040
1.02
4
GROUND
.020
.508
RF INPUT
1
RF OUTPUT
AND BIAS
3
2
GROUND
.004
±
.002
.10
±
.05
.070
1.70
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx =
±
0.005
mm .xx =
±
0.13
.495
±
.030
12.57
±
.76
.035
.89
6-421
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