MSA-0870 [AGILENT]

Cascadable Silicon Bipolar

MMIC Amplifier

Technical Data

MSA-0870

Features

• Usable Gain to 6.0 GHz

• High Gain:

32.5 dB Typical at 0.1 GHz

23.5 dB Typical at 1.0 GHz

• Low Noise Figure:

3.0 dB Typical at 1.0 GHz

• Hermetic Gold-ceramic

Microstrip Package

purpose 50

Ω

gain block above

0.5 GHz and can be used as a high

gain transistor below this fre-

quency. Typical applications

include narrow and moderate band

IF and RF amplifiers in industrial

and military applications.

70 mil Package

Description

The MSA-0870 is a high perfor-

mance silicon bipolar Monolithic

Microwave Integrated Circuit

(MMIC) housed in a hermetic, high

reliability package. This MMIC is

designed for use as a general

The MSA-series is fabricated using

HP’s 10 GHz f

T

, 25 GHz f

MAX

,

silicon bipolar MMIC process

which uses nitride self-alignment,

ion implantation, and gold metalli-

zation to achieve excellent

performance, uniformity and

reliability. The use of an external

bias resistor for temperature and

current stability also allows bias

flexibility.

Typical Biasing Configuration

R

bias

V

CC

>

10

V

RFC (Optional)

4

C

block

3

IN

1

MSA

C

block

OUT

V

d

= 7.8 V

2

5965-9544E

6-418

MSA-0870 Absolute Maximum Ratings

Parameter

Device Current

Power Dissipation

[2,3]

RF Input Power

Junction Temperature

Storage Temperature

Absolute Maximum

[1]

80 mA

750 mW

+13 dBm

200°C

–65°C to 200°C

Thermal Resistance

[2,4]

:

θ

jc

= 150°C/W

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. T

CASE

= 25°C.

3. Derate at 6.7 mW/°C for T

C

> 88°C.

4. The small spot size of this technique results in a higher, though more

accurate determination of

θ

jc

than do alternate methods. See MEASURE-

MENTS section “Thermal Resistance” for more information.

Electrical Specifications

[1]

, T

A

= 25°C

Symbol

G

P

Parameters and Test Conditions: I

d

= 36 mA, Z

O

= 50

Ω

Power Gain (|S

21

|

2

)

f = 0.1 GHz

f = 1.0 GHz

f = 4.0 GHz

f = 1.0 to 3.0 GHz

f = 1.0 to 3.0 GHz

f = 1.0 GHz

f = 1.0 GHz

f = 1.0 GHz

f = 1.0 GHz

Units

dB

Min.

22.0

Typ.

32.5

23.5

11.0

2.0:1

1.9:1

Max.

25.0

12.0

VSWR

NF

P

1 dB

IP

3

t

D

V

d

dV/dT

Input VSWR

Output VSWR

50

Ω

Noise Figure

Output Power at 1 dB Gain Compression

Third Order Intercept Point

Group Delay

Device Voltage

Device Voltage Temperature Coefficient

dB

dBm

dBm

psec

V

mV/°C

7.0

3.0

12.5

27.0

125

7.8

–17.0

8.4

Note:

1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current

is on the following page.

6-419

MSA-0870 Typical Scattering Parameters

[1]

(Z

O

= 50

Ω,

T

A

= 25°C, I

d

= 36 mA)

Freq.

GHz

S

11

Mag

Ang

dB

S

21

Mag

Ang

dB

S

12

Mag

Ang

Mag

S

22

Ang

k

0.1

0.2

0.4

0.6

0.8

1.0

1.5

2.0

2.5

3.0

3.5

4.0

5.0

6.0

.65

.60

.48

.40

.35

.32

.29

.30

.31

.32

.34

.34

.33

.39

–19

–35

–60

–76

–88

–102

–118

–133

–139

–149

–159

–168

161

128

32.5

31.5

29.1

26.8

24.9

23.4

20.1

17.6

15.6

13.8

12.2

10.8

8.4

6.2

42.04

37.54

28.49

21.90

17.48

14.85

10.14

7.55

6.01

4.87

4.09

3.48

2.63

2.04

161

145

122

108

97

87

70

56

49

39

28

17

–3

–22

–36.3

–33.7

–30.5

–28.0

–26.2

–24.9

–23.0

–21.9

–20.0

–19.5

–18.4

–17.7

–16.6

–16.2

.015

.021

.030

.040

.049

.057

.071

.081

.100

.106

.121

.131

.147

.155

40

47

51

50

50

51

47

45

46

41

35

31

21

10

.64

.58

.47

.38

.33

.28

.22

.16

.12

.07

.07

.12

.19

.21

–22

–43

–74

–97

–113

–128

–151

–167

–172

–170

–143

–112

–103

–115

0.78

0.66

0.64

0.72

0.78

0.83

0.91

0.98

1.02

1.11

1.12

1.16

1.26

1.36

Note:

1. A model for this device is available in the DEVICE MODELS section.

Typical Performance, T

A

= 25°C

(unless otherwise noted)

35

30

Gain Flat to DC

25

30

40

T

C

= +125°C

T

C

= +25°C

T

C

= –55°C

35

0.1 GHz

30

0.5 GHz

25

G

p

(dB)

G

p

(dB)

I

d

(mA)

20

15

10

1.0 GHz

20

2.0 GHz

15

20

10

5

0

0.1

0.3 0.5

1.0

3.0

6.0

FREQUENCY (GHz)

0

0

2

4

6

V

d

(V)

8

10

10

5

10

4.0 GHz

20

30

I

d

(mA)

40

Figure 1. Typical Power Gain vs.

Frequency, I

d

= 36 mA.

Figure 2. Device Current vs. Voltage.

Figure 3. Power Gain vs. Current.

24

16

I

d

= 40 mA

14

G

P

13

12

P

1 dB

11

10

12

10

8

I

d

= 36 mA

4.5

I

d

= 20 mA

I

d

= 36 mA

I

d

= 40 mA

Gp (dB)

23

22

21

4.0

P

1 dB

(dBm)

P

1 dB

(dBm)

NF (dB)

I

d

= 20 mA

0.2 0.3

0.5

1.0

2.0

4.0

3.5

3.0

NF (dB)

4

3

2

–55 –25

+25

+85

NF

6

+125

4

0.1

2.5

0.1

0.2 0.3

0.5

1.0

2.0

FREQUENCY (GHz)

FREQUENCY (GHz)

TEMPERATURE (°C)

Figure 4. Output Power at 1 dB Gain

Compression, NF and Power Gain vs.

Case Temperature, f = 1.0 GHz,

I

d

=36mA.

Figure 5. Output Power at 1 dB Gain

Compression vs. Frequency.

Figure 6. Noise Figure vs. Frequency.

6-420

70 mil Package Dimensions

.040

1.02

4

GROUND

.020

.508

RF INPUT

1

RF OUTPUT

AND BIAS

3

2

GROUND

.004

±

.002

.10

±

.05

.070

1.70

Notes:

(unless otherwise specified)

1. Dimensions are in

mm

2. Tolerances

in .xxx =

±

0.005

mm .xx =

±

0.13

.495

±

.030

12.57

±

.76

.035

.89

6-421