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MSA-0870

更新时间：2025-07-10 01:50:08
品牌：AGILENT
描述：Cascadable Silicon Bipolar MMIC Amplifier

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中文翻译

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MSA-0870 概述

Cascadable Silicon Bipolar MMIC Amplifier 级联硅双极MMIC放大器 射频/微波放大器

MSA-0870 规格参数

是否Rohs认证：符合生命周期：Transferred
包装说明：SL,4LEAD,.07SQReach Compliance Code：unknown
风险等级：5.17Is Samacsys：N
特性阻抗：50 Ω构造：COMPONENT
增益：22 dB最大输入功率 (CW)：13 dBm
安装特点：SURFACE MOUNT端子数量：4
最大工作频率：4000 MHz最小工作频率：100 MHz
封装主体材料：CERAMIC封装等效代码：SL,4LEAD,.07SQ
电源：7.8 V射频/微波设备类型：WIDE BAND LOW POWER
子类别：RF/Microwave Amplifiers最大压摆率：40 mA
表面贴装：YES技术：BIPOLAR
最大电压驻波比：1.9Base Number Matches：1

MSA-0870 数据手册

通过下载MSA-0870数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Cascadable Silicon Bipolar  
MMIC Amplifier  
Technical Data  
MSA-0870  
purpose 50 Ω gain block above  
Features  
70 mil Package  
0.5 GHz and can be used as a high  
gain transistor below this fre-  
quency. Typical applications  
include narrow and moderate band  
IF and RF amplifiers in industrial  
and military applications.  
• Usable Gain to 6.0 GHz  
• High Gain:  
32.5dBTypicalat0.1 GHz  
23.5dBTypicalat1.0 GHz  
• Low Noise Figure:  
3.0 dBTypicalat1.0 GHz  
The MSA-series is fabricated using  
• Hermetic Gold-ceramic  
Microstrip Package  
HP’s10GHzf ,25 GHzf  
,
T
MAX  
silicon bipolar MMIC process  
which uses nitride self-alignment,  
ion implantation, and gold metalli-  
zation to achieve excellent  
performance, uniformity and  
reliability. The use of an external  
bias resistor for temperature and  
current stability also allows bias  
flexibility.  
Description  
The MSA-0870 is a high perfor-  
mance silicon bipolar Monolithic  
Microwave Integrated Circuit  
(MMIC) housed in a hermetic, high  
reliability package. This MMIC is  
designed for use as a general  
Typical Biasing Configuration  
R
bias  
VCC  
> 10 V  
RFC (Optional)  
4
C
C
block  
block  
3
IN  
MSA  
OUT  
1
V
= 7.8 V  
d
2
5965-9544E  
6-418  
MSA-0870 Absolute Maximum Ratings  
Parameter  
AbsoluteMaximum[1]  
Thermal Resistance[2,4]  
:
Device Current  
Power Dissipation[2,3]  
RF Input Power  
Junction Temperature  
Storage Temperature  
80 mA  
750mW  
+13dBm  
200°C  
θjc =150°C/W  
–65°C to 200°C  
Notes:  
1. Permanent damage may occur if any of these limits are exceeded.  
2. TCASE=25°C.  
3. Derate at 6.7 mW/°C for TC > 88°C.  
4. The small spot size of this technique results in a higher, though more  
accurate determination of θjc than do alternate methods. See MEASURE-  
MENTS section “Thermal Resistance” for more information.  
Electrical Specifications[1], TA = 25°C  
Symbol  
Parameters and Test Conditions: Id = 36 mA, ZO = 50 Ω  
Units Min. Typ. Max.  
GP  
PowerGain(|S21|2)  
f=0.1GHz  
f=1.0GHz  
f=4.0GHz  
dB  
32.5  
23.5  
11.0  
22.0  
25.0  
12.0  
Input VSWR  
f=1.0to3.0GHz  
f=1.0to3.0GHz  
f=1.0GHz  
2.0:1  
1.9:1  
3.0  
VSWR  
Output VSWR  
NF  
50 Ω Noise Figure  
dB  
dBm  
dBm  
psec  
V
P1 dB  
IP3  
Output Power at 1 dB Gain Compression  
Third Order Intercept Point  
Group Delay  
f=1.0GHz  
12.5  
27.0  
125  
f=1.0GHz  
tD  
f=1.0GHz  
Vd  
Device Voltage  
7.0  
7.8  
8.4  
dV/dT  
Device Voltage Temperature Coefficient  
mV/°C  
–17.0  
Note:  
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current  
is on the following page.  
6-419  
MSA-0870 Typical Scattering Parameters[1] (ZO = 50 Ω, TA = 25°C, Id = 36 mA)  
S11  
S21  
S12  
S22  
Freq.  
GHz  
Mag  
Ang  
dB  
Mag  
Ang  
dB  
Mag  
Ang  
Mag  
Ang  
k
0.1  
0.2  
0.4  
0.6  
0.8  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
5.0  
6.0  
.65  
.60  
.48  
.40  
.35  
.32  
.29  
.30  
.31  
.32  
.34  
.34  
.33  
.39  
–19  
–35  
32.5  
31.5  
29.1  
26.8  
24.9  
23.4  
20.1  
17.6  
15.6  
13.8  
12.2  
10.8  
8.4  
42.04 161  
37.54 145  
28.49 122  
21.90 108  
–36.3  
–33.7  
–30.5  
–28.0  
–26.2  
–24.9  
–23.0  
–21.9  
–20.0  
–19.5  
–18.4  
–17.7  
–16.6  
–16.2  
.015  
.021  
.030  
.040  
.049  
.057  
.071  
.081  
.100  
.106  
.121  
.131  
.147  
.155  
40  
47  
51  
50  
50  
51  
47  
45  
46  
41  
35  
31  
21  
10  
.64  
.58  
.47  
.38  
.33  
.28  
.22  
.16  
.12  
.07  
.07  
.12  
.19  
.21  
–22  
–43  
–74  
–97  
–113  
–128  
–151  
–167  
–172  
–170  
–143  
–112  
–103  
–115  
0.78  
0.66  
0.64  
0.72  
0.78  
0.83  
0.91  
0.98  
1.02  
1.11  
1.12  
1.16  
1.26  
1.36  
–60  
–76  
–88  
17.48  
14.85  
10.14  
7.55  
6.01  
4.87  
4.09  
3.48  
2.63  
97  
87  
70  
56  
49  
39  
28  
17  
–3  
–102  
–118  
–133  
–139  
–149  
–159  
–168  
161  
128  
6.2  
2.04 –22  
Note:  
1. A model for this device is available in the DEVICE MODELS section.  
Typical Performance, TA = 25°C  
(unless otherwise noted)  
35  
30  
40  
30  
20  
35  
30  
T
T
T
= +125°C  
= +25°C  
= –55°C  
C
C
C
0.1 GHz  
0.5 GHz  
Gain Flat to DC  
25  
20  
25  
20  
1.0 GHz  
2.0 GHz  
15  
15  
10  
5
10  
5
10  
0
4.0 GHz  
0
0.1  
0.3 0.5  
1.0  
3.0 6.0  
0
2
4
6
8
10  
10  
20  
30  
40  
FREQUENCY (GHz)  
V
(V)  
I
(mA)  
d
d
Figure 1. Typical Power Gain vs.  
Frequency, Id = 36 mA.  
Figure 2. Device Current vs. Voltage.  
Figure 3. Power Gain vs. Current.  
4.5  
4.0  
16  
14  
12  
24  
23  
22  
I
I
I
= 20 mA  
= 36 mA  
= 40 mA  
d
d
d
I
I
= 40 mA  
= 36 mA  
d
d
G
P
21  
13  
12  
11  
10  
3.5  
3.0  
2.5  
10  
8
P
1 dB  
4
NF  
6
4
I
= 20 mA  
d
3
2
–55 –25  
+25  
+85  
+125  
0.1  
0.2 0.3 0.5  
1.0  
2.0  
4.0  
0.1  
0.2 0.3 0.5  
1.0  
2.0  
TEMPERATURE (°C)  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Figure 5. Output Power at 1 dB Gain  
Compression vs. Frequency.  
Figure 6. Noise Figure vs. Frequency.  
Figure 4. Output Power at 1 dB Gain  
Compression, NF and Power Gain vs.  
Case Temperature, f = 1.0 GHz,  
Id=36mA.  
6-420  
70 mil Package Dimensions  
.040  
1.02  
4
GROUND  
.020  
.508  
RF OUTPUT  
AND BIAS  
RF INPUT  
1
3
Notes:  
(unless otherwise specified)  
2
GROUND  
in  
1. Dimensions are  
mm  
2. Tolerances  
in .xxx = ± 0.005  
mm .xx = ± 0.13  
.070  
1.70  
.004 ± .002  
.10 ± .05  
.495 ± .030  
12.57 ± .76  
.035  
.89  
6-421  

MSA-0870 相关器件

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