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元器件型号: |
MSA-0870 |
生产厂家: |
AGILENT TECHNOLOGIES, LTD.
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描述和应用: |
Cascadable Silicon Bipolar MMIC Amplifier 级联硅双极MMIC放大器 射频和微波射频放大器微波放大器 |
PDF文件: |
总4页 (文件大小:52K) |
下载文档: |
下载PDF数据表文档文件 |
型号参数:MSA-0870参数 |
是否Rohs认证 | 符合 |
生命周期 | Transferred |
IHS 制造商 | AGILENT TECHNOLOGIES INC |
包装说明 | SL,4LEAD,.07SQ |
Reach Compliance Code | unknown |
风险等级 | 5.17 |
Is Samacsys | N |
特性阻抗 | 50 Ω |
构造 | COMPONENT |
增益 | 22 dB |
最大输入功率 (CW) | 13 dBm |
安装特点 | SURFACE MOUNT |
端子数量 | 4 |
最大工作频率 | 4000 MHz |
最小工作频率 | 100 MHz |
封装主体材料 | CERAMIC |
封装等效代码 | SL,4LEAD,.07SQ |
电源 | 7.8 V |
射频/微波设备类型 | WIDE BAND LOW POWER |
子类别 | RF/Microwave Amplifiers |
最大压摆率 | 40 mA |
表面贴装 | YES |
技术 | BIPOLAR |
最大电压驻波比 | 1.9 |
Base Number Matches | 1 |
MAX34334CSE前5页PDF页面详情预览
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-0870
Features
• Usable Gain to 6.0 GHz
• High Gain:
32.5 dB Typical at 0.1 GHz
23.5 dB Typical at 1.0 GHz
• Low Noise Figure:
3.0 dB Typical at 1.0 GHz
• Hermetic Gold-ceramic
Microstrip Package
purpose 50
Ω
gain block above
0.5 GHz and can be used as a high
gain transistor below this fre-
quency. Typical applications
include narrow and moderate band
IF and RF amplifiers in industrial
and military applications.
70 mil Package
Description
The MSA-0870 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic, high
reliability package. This MMIC is
designed for use as a general
The MSA-series is fabricated using
HP’s 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R
bias
V
CC
>
10
V
RFC (Optional)
4
C
block
3
IN
1
MSA
C
block
OUT
V
d
= 7.8 V
2
5965-9544E
6-418
MSA-0870 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
[1]
80 mA
750 mW
+13 dBm
200°C
–65°C to 200°C
Thermal Resistance
[2,4]
:
θ
jc
= 150°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 6.7 mW/°C for T
C
> 88°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of
θ
jc
than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol
G
P
Parameters and Test Conditions: I
d
= 36 mA, Z
O
= 50
Ω
Power Gain (|S
21
|
2
)
f = 0.1 GHz
f = 1.0 GHz
f = 4.0 GHz
f = 1.0 to 3.0 GHz
f = 1.0 to 3.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
Units
dB
Min.
22.0
Typ.
32.5
23.5
11.0
2.0:1
1.9:1
Max.
25.0
12.0
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
Input VSWR
Output VSWR
50
Ω
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
dB
dBm
dBm
psec
V
mV/°C
7.0
3.0
12.5
27.0
125
7.8
–17.0
8.4
Note:
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current
is on the following page.
6-419
MSA-0870 Typical Scattering Parameters
[1]
(Z
O
= 50
Ω,
T
A
= 25°C, I
d
= 36 mA)
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
k
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
.65
.60
.48
.40
.35
.32
.29
.30
.31
.32
.34
.34
.33
.39
–19
–35
–60
–76
–88
–102
–118
–133
–139
–149
–159
–168
161
128
32.5
31.5
29.1
26.8
24.9
23.4
20.1
17.6
15.6
13.8
12.2
10.8
8.4
6.2
42.04
37.54
28.49
21.90
17.48
14.85
10.14
7.55
6.01
4.87
4.09
3.48
2.63
2.04
161
145
122
108
97
87
70
56
49
39
28
17
–3
–22
–36.3
–33.7
–30.5
–28.0
–26.2
–24.9
–23.0
–21.9
–20.0
–19.5
–18.4
–17.7
–16.6
–16.2
.015
.021
.030
.040
.049
.057
.071
.081
.100
.106
.121
.131
.147
.155
40
47
51
50
50
51
47
45
46
41
35
31
21
10
.64
.58
.47
.38
.33
.28
.22
.16
.12
.07
.07
.12
.19
.21
–22
–43
–74
–97
–113
–128
–151
–167
–172
–170
–143
–112
–103
–115
0.78
0.66
0.64
0.72
0.78
0.83
0.91
0.98
1.02
1.11
1.12
1.16
1.26
1.36
Note:
1. A model for this device is available in the DEVICE MODELS section.
Typical Performance, T
A
= 25°C
(unless otherwise noted)
35
30
Gain Flat to DC
25
30
40
T
C
= +125°C
T
C
= +25°C
T
C
= –55°C
35
0.1 GHz
30
0.5 GHz
25
G
p
(dB)
G
p
(dB)
I
d
(mA)
20
15
10
1.0 GHz
20
2.0 GHz
15
20
10
5
0
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
0
0
2
4
6
V
d
(V)
8
10
10
5
10
4.0 GHz
20
30
I
d
(mA)
40
Figure 1. Typical Power Gain vs.
Frequency, I
d
= 36 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
24
16
I
d
= 40 mA
14
G
P
13
12
P
1 dB
11
10
12
10
8
I
d
= 36 mA
4.5
I
d
= 20 mA
I
d
= 36 mA
I
d
= 40 mA
Gp (dB)
23
22
21
4.0
P
1 dB
(dBm)
P
1 dB
(dBm)
NF (dB)
I
d
= 20 mA
0.2 0.3
0.5
1.0
2.0
4.0
3.5
3.0
NF (dB)
4
3
2
–55 –25
+25
+85
NF
6
+125
4
0.1
2.5
0.1
0.2 0.3
0.5
1.0
2.0
FREQUENCY (GHz)
FREQUENCY (GHz)
TEMPERATURE (°C)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
d
=36mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-420
70 mil Package Dimensions
.040
1.02
4
GROUND
.020
.508
RF INPUT
1
RF OUTPUT
AND BIAS
3
2
GROUND
.004
±
.002
.10
±
.05
.070
1.70
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx =
±
0.005
mm .xx =
±
0.13
.495
±
.030
12.57
±
.76
.035
.89
6-421
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