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MSA-0886

更新时间：2025-06-29 02:19:29
品牌：AGILENT
描述：Cascadable Silicon Bipolar MMIC Amplifier

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MSA-0886 概述

Cascadable Silicon Bipolar MMIC Amplifier 级联硅双极MMIC放大器 射频/微波放大器

MSA-0886 规格参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：SL,4GW-LD,.085CIRReach Compliance Code：unknown
风险等级：5.03特性阻抗：50 Ω
构造：COMPONENT最大输入功率 (CW)：13 dBm
安装特点：SURFACE MOUNT端子数量：4
最大工作频率：3000 MHz最小工作频率：100 MHz
封装主体材料：PLASTIC/EPOXY封装等效代码：SL,4GW-LD,.085CIR
电源：7.8 V射频/微波设备类型：WIDE BAND LOW POWER
子类别：RF/Microwave Amplifiers最大压摆率：36 mA
表面贴装：YES技术：BIPOLAR
最大电压驻波比：1.9Base Number Matches：1

MSA-0886 数据手册

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Cascadable Silicon Bipolar  
MMIC Amplifier  
Technical Data  
MSA-0886  
Features  
Description  
86 Plastic Package  
• Usable Gain to 5.5 GHz  
The MSA-0886 is a high perfor-  
mance silicon bipolar Monolithic  
Microwave Integrated Circuit  
(MMIC) housed in a low cost,  
surface mount plastic package.  
This MMIC is designed for use as a  
general purpose 50 Ω gain block  
above 0.5 GHz and can be used as  
a high gain transistor below this  
frequency. Typical applications  
include narrow and moderate band  
IF and RF amplifiers in commer-  
cial and industrial applications.  
• High Gain:  
32.5dBTypicalat0.1 GHz  
22.5dBTypicalat1.0 GHz  
• Low Noise Figure:  
3.3 dBTypicalat1.0 GHz  
• Surface Mount Plastic  
Package  
• Tape-and-Reel Packaging  
Option Available[1]  
ion implantation, and gold metalli-  
zation to achieve excellent perfor-  
mance, uniformity and reliability.  
The use of an external bias resistor  
for temperature and current  
Note:  
1. Refer to PACKAGING section “Tape-  
and-Reel Packaging for Semiconduc-  
tor Devices.”  
The MSA-series is fabricated using  
HP’s10GHzf ,25 GHzf  
,
T
MAX  
silicon bipolar MMIC process  
which uses nitride self-alignment,  
stability also allows bias flexibility.  
Typical Biasing Configuration  
R
bias  
VCC  
> 10 V  
RFC (Optional)  
4
C
C
block  
block  
3
IN  
MSA  
OUT  
1
V
= 7.8 V  
d
2
5965-9547E  
6-426  
MSA-0886 Absolute Maximum Ratings  
Parameter  
AbsoluteMaximum[1]  
Thermal Resistance[2,4]  
:
Device Current  
Power Dissipation[2,3]  
RF Input Power  
Junction Temperature  
Storage Temperature  
Notes:  
65 mA  
500mW  
+13dBm  
150°C  
θjc =140°C/W  
–65°C to 150°C  
1. Permanent damage may occur if any of these limits are exceeded.  
2. TCASE=25°C.  
3. Derate at 7.1 mW/°C for TC > 80°C.  
4. See MEASUREMENTS section “Thermal Resistance” for more information.  
Electrical Specifications[1], TA = 25°C  
Symbol  
Parameters and Test Conditions: Id = 36 mA, ZO = 50 Ω  
Units Min. Typ. Max.  
GP  
PowerGain(|S21|2)  
f=0.1GHz  
f=1.0GHz  
dB  
32.5  
22.5  
20.5  
Input VSWR  
f=0.1to3.0GHz  
f=0.1to3.0GHz  
f=1.0GHz  
2.1:1  
1.9:1  
3.3  
VSWR  
Output VSWR  
NF  
50 Ω Noise Figure  
dB  
dBm  
dBm  
psec  
V
P1 dB  
IP3  
Output Power at 1 dB Gain Compression  
Third Order Intercept Point  
Group Delay  
f=1.0GHz  
12.5  
27.0  
140  
f=1.0GHz  
tD  
f=1.0GHz  
Vd  
Device Voltage  
6.2  
7.8  
9.4  
dV/dT  
Device Voltage Temperature Coefficient  
mV/°C  
–17.0  
Note:  
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current  
is on the following page.  
Part Number Ordering Information  
Part Number  
No. of Devices  
Container  
MSA-0886-TR1  
MSA-0886-BLK  
1000  
100  
7" Reel  
Antistatic Bag  
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.  
6-427  
MSA-0886 Typical Scattering Parameters[1] (ZO = 50 Ω, TA = 25°C, Id = 36 mA)  
S11  
S21  
S12  
S22  
Freq.  
GHz  
Mag  
Ang  
dB  
Mag  
Ang  
dB  
Mag  
Ang  
Mag  
Ang  
k
0.1  
0.2  
0.4  
0.6  
0.8  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
5.0  
6.0  
.63  
.56  
.43  
.35  
.30  
.27  
.27  
.31  
.35  
.40  
.45  
.51  
.61  
.68  
–22  
–41  
32.5  
31.3  
28.6  
26.4  
24.2  
22.4  
19.2  
16.7  
14.8  
12.9  
11.4  
9.9  
42.12 160  
36.68 143  
26.94 119  
20.89 104  
–36.7  
–33.9  
–29.1  
–27.0  
–25.3  
–24.2  
–21.6  
–19.5  
–17.9  
–17.4  
–16.8  
–16.1  
–15.7  
–15.2  
.015  
.020  
.035  
.045  
.054  
.062  
.083  
.105  
.128  
.135  
.145  
.157  
.164  
.173  
54  
50  
52  
49  
50  
49  
46  
41  
36  
30  
25  
19  
10  
4
.62  
.55  
.43  
.34  
.29  
.26  
.23  
.22  
.21  
.20  
.19  
.18  
.17  
.23  
–24  
–46  
–79  
0.68  
0.64  
0.69  
0.77  
0.83  
0.87  
0.93  
0.96  
0.96  
1.01  
1.02  
1.01  
1.00  
0.95  
–69  
–88  
–103  
–124  
–139  
–172  
163  
–104  
–116  
–144  
–166  
178  
16.21  
13.20  
9.15  
6.84  
5.50  
4.41  
3.72  
3.14  
93  
83  
65  
49  
38  
25  
13  
1
149  
162  
132  
149  
124  
137  
121  
116  
7.3  
2.31 –22  
1.69 –42  
130  
100  
4.6  
143  
Note:  
1. A model for this device is available in the DEVICE MODELS section.  
Typical Performance, TA = 25°C  
(unless otherwise noted)  
35  
40  
30  
20  
23  
22  
21  
T
T
T
= +85°C  
= +25°C  
= –25°C  
C
C
C
30  
G
P
P
25  
20  
I
= 36 mA  
d
13  
12  
11  
1 dB  
15  
I
= 20 mA  
d
10  
5
4
3
2
10  
0
NF  
Gain Flat to DC  
0
0.1  
0.3 0.5  
1.0  
3.0 6.0  
–25  
0
+25 +55  
+85  
0
2
4
6
8
10  
FREQUENCY (GHz)  
V
(V)  
TEMPERATURE (°C)  
d
Figure 3. Output Power at 1 dB Gain  
Compression, NF and Power Gain vs.  
Case Temperature, f = 1.0 GHz,  
Id=36mA.  
Figure 1. Typical Power Gain vs.  
Frequency, Id = 36 mA.  
Figure 2. Device Current vs. Voltage.  
4.5  
4.0  
16  
I
I
I
= 20 mA  
= 36 mA  
= 40 mA  
d
d
d
I
I
= 40 mA  
= 36 mA  
d
d
14  
12  
3.5  
3.0  
2.5  
10  
8
6
4
I
= 20 mA  
d
0.1  
0.2 0.3 0.5  
1.0  
2.0  
4.0  
0.1  
0.2 0.3 0.5  
1.0  
2.0  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Figure 4. Output Power at 1 dB Gain  
Compression vs. Frequency.  
Figure 5. Noise Figure vs. Frequency.  
6-428  
86 Plastic Package Dimensions  
0.51 ± 0.13  
(0.020 ± 0.005)  
4
GROUND  
RF OUTPUT  
AND DC BIAS  
45°  
RF INPUT  
C
L
3
1
2.34 ± 0.38  
(0.092 ± 0.015)  
2
GROUND  
2.67 ± 0.38  
(0.105 ± 0.15)  
1.52 ± 0.25  
(0.060 ± 0.010)  
0.203 ± 0.051  
5° TYP.  
(0.006 ± 0.002)  
8° MAX  
0° MIN  
0.66 ± 0.013  
(0.026 ± 0.005)  
2.16 ± 0.13  
(0.085 ± 0.005)  
0.30 MIN  
(0.012 MIN)  
DIMENSIONS ARE IN MILLIMETERS (INCHES)  
6-429  

MSA-0886 相关器件

型号 制造商 描述 价格 文档
MSA-0886-BLK AGILENT Cascadable Silicon Bipolar MMIC Amplifier 获取价格
MSA-0886-BLKG AVAGO 0MHz - 1000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, PLASTIC, LEAD FREE, 4 PIN 获取价格
MSA-0886-BLKG AGILENT Wide Band Low Power Amplifier, 100MHz Min, 3000MHz Max, 1 Func, BIPolar, 获取价格
MSA-0886-TR1 AGILENT Cascadable Silicon Bipolar MMIC Amplifier 获取价格
MSA-0886-TR1 AVAGO 0MHz - 1000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, PLASTIC PACKAGE-4 获取价格
MSA-0886-TR1G AVAGO 0MHz - 1000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, PLASTIC, LEAD FREE, 4 PIN 获取价格
MSA-0886-TR2 AVAGO 0MHz - 1000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, PLASTIC, LEAD FREE, 4 PIN 获取价格
MSA-0886-TR2 AGILENT Wide Band Low Power Amplifier, BIPolar, 获取价格
MSA-0886-TR2G AVAGO 0MHz - 1000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, PLASTIC, LEAD FREE, 4 PIN 获取价格
MSA-0886-TR2G AGILENT Wide Band Low Power Amplifier, 1 Func, BIPolar, 获取价格

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