AWT6631Q7_技术文档

AWT6631

HELP3DC^TMUMTS2100 (Band 1)

LTE/WCDMA/CDMA/TD-SCDMA Linear PAM

Data Sheet - Rev 2.7

FEATURES

•ꢀ CDMA/EVDO, WCDMA/HSPA, LTE and

TD-SCDMA Compliant

•ꢀ 3^rdGeneration HELP^TMtechnology

•ꢀ High Efﬁciency (R99 waveform):

•ꢀꢀ41 % @ P^OUT= +28.25 dBm

A

W

T6631

•ꢀꢀ24 % @ P^OUT= +17 dBm

•ꢀ Simpler Calibration with only 2 Bias Modes

•ꢀꢀꢀꢀOptimized for SMPS Supply

•ꢀꢀꢀꢀLow Quiescent Current: 8 mA

•

Low Leakage Current in Shutdown Mode: <4 µA

Internal Voltage Regulator

10 Pin 3 mm x 3 mm x 1 mm

Surface Mount Module

•ꢀ Integrated “daisy chainable” directional couplers

with CPL^INand CPLOUT Ports

•

Optimized for a 50 Ω System

Low Proﬁle Miniature Surface Mount Package

Internal DC blocks on IN/OUT RF ports

1.8 V Control Logic

that optimize efﬁciency for different output power

levels, and a shutdown mode with low leakage current,

which increases handset talk and standby time. The

self-contained 3 mm x 3 mm x 1 mm surface mount

package incorporates matching networks optimized for

output power, efﬁciency, and linearity in a 50 Ω system.

RoHS Compliant Package, 260 ^oC MSL-3

APPLICATIONS

•

Wireless Handsets and Data Devices for:

•ꢀꢀWCDMA/HSPA/LTE IMT-Band

•ꢀꢀCDMA/EVDO Bandclass 6

•ꢀꢀTD-SCDMA 1.82/2.0 GHz Band

•ꢀꢀTD - LTE Band 33, 34, and 39

GND at Slug (pad)

1

2

3

4

5

10

9

V

BATT

VCC

PRODUCT DESCRIPTION

The AWT6631 PA is designed to provide highly linear

output for WCDMA, CDMA , LTE and TD-SCDMA

handsets and data devices with high efﬁciency at

both high and low power modes. This HELP3DC^TM

PA can be used with an external switch mode power

supply (SMPS) to improve its efﬁciency and reduce

current consumption further at medium and low output

powers. A “daisy chainable” directional coupler is

integrated in the module thus eliminating the need

of external couplers. The device is manufactured on

an advanced InGaP HBT MMIC technology offering

state-of-the-art reliability, temperature stability, and

ruggedness. There are two selectable bias modes

CPL

RFIN

RFOUT

CPL^IN

GND

Bias Control

8

V

MODE2 (N/C)

Voltage Regulation

7

VMODE1

6

VEN

CPLOUT

Figure 1: Block Diagram

03/2012

AWT6631

1

2

10

9

V

BATT

V

CC

RFIN

RFOUT

3

8

VMODE2 (N/C)

CPL^IN

4

5

7

6

V

MODE1

GND

VEN

CPLOUT

Figure 2: Pinout (X-ray Top View)

Table 1: Pin Description

1

NAME

DESCRIPTION

Battery Voltage

RF Input

V

BATT

2

RF^IN

3

VMODE2 (N/C) No Connection

4

V

MODE1

Mode Control Voltage 1

PA Enable Voltage

Coupler Output

Ground

5

V

EN

6

CPL^OUT

GND

7

8

CPL^IN

RF^OUT

Coupler Input

9

RF Output

10

V

CC

Supply Voltage

Data Sheet - Rev 2.7

03/2012

2

AWT6631

ELECTRICAL CHARACTERISTICS

Table 2: Absolute Minimum and Maximum Ratings

PARAMETER

MIN

0

MAX

+5

UNIT

V

Supply Voltage (V^CC

)

Battery Voltage (VBATT

Control Voltages (V^MODE1, VENABLE

RF Input Power (P^IN

Storage Temperature (T^STG

)

0

+6

V

)

0

+3.5

+10

+150

V

)

-

dBm

°C

)

-40

Stresses in excess of the absolute ratings may cause permanent damage.

Functional operation is not implied under these conditions. Exposure to

absolute ratings for extended periods of time may adversely affect reliability.

Table 3: Operating Ranges

PARAMETER

MIN

+0.5

+3.1

TYP

+3.4

MAX

+4.35

UNITS

COMMENTS

Supply Voltage (V^CC)

Battery Voltage (V^BATT)

V

POUT ≤ +28.25 dBm

+1.35

0

+1.8

0

+3.1

+0.5

PA “on”

PA “shut down”

Enable Voltage (V^ENABLE)

V

+1.35

0

+1.8

0

+3.1

+0.5

Low Bias Mode

High Bias Mode

Mode Control Voltage (V^MODE1)

V

Case Temperature (T^C)

-30

-

+90

°C

The device may be operated safely over these conditions; however, parametric performance is guaranteed only

overꢀtheꢀconditionsꢀdeﬁnedꢀinꢀtheꢀelectricalꢀspeciﬁcations.

Data Sheet - Rev 2.7

03/2012

3

AWT6631

Tableꢀ4:ꢀElectricalꢀSpeciﬁcationsꢀ-ꢀWCDMAꢀOperationꢀ(R99ꢀwaveform)

(T^C= +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system)

PARAMETER

MIN

TYP

MAX

UNITS COMMENTS

Operating Frequency (f)

1920

-

1980

MHz

UMTS Band 1

RF Output Power (Pmax) ⁽¹⁾

R99 WCDMA, HPM

R99 WCDMA, LPM

3GPP TS 24.121-1, Rel 8

Table C.11.1.3, for WCDMA

Subtest 1

27.45

16.2

28.25

17

28.25

17

dBm

dB

25

12

27

13

30

16

HPM, P^OUT= 28.25 dBm

LPM, P^OUT= 17 dBm

Gain

-

-41

-42

-37

-38

HPM, P^OUT= 28.25 dBm

LPM, P^OUT= 17 dBm

ACLR1 at 5 MHz offset ⁽²⁾

ACLR2 at 10 MHz offset ⁽²⁾

Power-Added Efﬁciency ⁽²⁾

dBc

%

-

-55

-48

HPM, P^OUT= 28.25 dBm

LPM, P^OUT= 17 dBm

37

21

41

24

-

HPM, P^OUT= 28.25 dBm

LPM, P^OUT= 17 dBm

Quiescent Current (Icq)

Low Bias Mode

-

9

14

0.5

5

mA

VMODE1 = +1.8 V

Mode Control Current

Enable Current

0.3

2.5

through V^MODEpin, VMODE1 = 1.8 V

through V^ENABLEpin

BATT Current

through V^BATTpin, VMODE1 = +1.8 V

V

BATT = +4.2 V, VCC = +4.2 V

ENABLE = 0 V, VMODE1 = 0 V

Leakage Current

-

4

7

µA

-

-137

-143

-135

-138

dBm/

Hz

P

OUT < +28.25 dBm, VMODE1 = 0 V

OUT < 17 dBm, VMODE1 = +1.8 V

Noise in Receive Band ⁽³⁾

Harmonics

2f

O

-

-39

-55

-35

-50

dBc

POUT < +28.25 dBm

3fO

, 4f

O

Input Impedance

Coupling Factor

Directivity

-

2:1

VSWR

dB

20

-

dB

698 - 2620 MHz

Pin 8 to 6

Shutdown Mode

Coupler IN-OUT

Daisy Chain Insertion Loss

-

<0.25

-

dB

POUT ≤ +28.25 dBm

In-band load VSWR < 5:1

Out-of-band load VSWR < 10:1

Applies over all operating condi-

tions

Spurious Output Level

(all suprious outputs)

-

-70

dBc

Load mismatch stress with no

permanent degradation of failure

8:1

-

VSWR Applies over full operating range

Phase Delta (HPM-LPM)

-

10

Deg

Notes:

(1) For operation at VCC = +3.1 V, POUT is derated by 0.8 dB.

(2) ACLR and Efﬁciency measured at 1950 MHz.

(3) Noise measured at 2110 MHz to 2170 MHz.

Data Sheet - Rev 2.7

03/2012

4

AWT6631

Tableꢀ5:ꢀElectricalꢀSpeciﬁcationsꢀ-ꢀLTEꢀOperationꢀ(RBꢀ=ꢀ12,ꢀSTARTꢀ=ꢀ0,ꢀQPSK)

(T^C= +25 °C, VCC = VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system)

PARAMETER

MIN

TYP

MAX

UNITS

COMMENTS

Operating Frequency (f)

1920

-

1980

MHz

UMTS Band 1

RF Output Power (Pmax) ⁽¹⁾

LTE, HPM

LTE, LPM

26.45

15.2

27.25

16

27.25

16

dBm

dB

TS 36.101 Rel 8 for LTE

25

12

27

13

30

16

HPM, P^OUT= 27.25 dBm

LPM, POUT = 16 dBm

Gain

ACLR E-UTRA ⁽²⁾

at ± 10 MHz offset

-

-38

-

HPM, POUT = 27.25 dBm

LPM, POUT = 16 dBm

dBc

%

ACLR1 UTRA ⁽²⁾

at ± 7.5 MHz offset

-

-39

-

HPM, P^OUT= 27.25 dBm

LPM, P^OUT= 16 dBm

ACLR2 UTRA ⁽²⁾

at ± 12.5 MHz offset

-

-60

-

HPM, P^OUT= 27.25 dBm

LPM, P^OUT= 16 dBm

-

36

22

-

HPM, POUT = 27.25 dBm

LPM, POUT = 16 dBm

Power-Added Efﬁciency ⁽²⁾

Noise emissions B34

2010 - 2025 MHz, 100 RB QPSK

LTE signal centered at 1970

MHz at LTE max power

-

-38

-48

-35

-42

dBm/

MHz

dBm/

300 kHz

LTE NS_05 PHS emissions

1884.5 - 1919.6 MHz

P^OUT≤ +27.25 dBm

In-band load VSWR < 5:1

Out-of-band load VSWR < 10:1

Applies over all operating condi-

tions

Spurious Output Level

(all spurious outputs)

-

<-70

dBc

Load mismatch stress with

no permanent degradation or

failure

8:1

-

VSWR

Applies over full operating range

Notes:

(1) For operation at VCC = +3.1 V, POUT is derated by 0.8 dB.

(2) ACLR and Efﬁciency measured at 1950 MHz.

Data Sheet - Rev 2.7

03/2012

5

AWT6631

Tableꢀ6:ꢀElectricalꢀSpeciﬁcationsꢀ-ꢀCDMAꢀOperationꢀ(CDMA2000,ꢀRC-1)

(T^C= +25 °C, VCC = VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system)

PARAMETER

MIN

TYP

MAX

UNITS

COMMENTS

Operating Frequency (f)

1920

-

1980

MHz

Band Class 6

RF Output Power (Pmax) ⁽¹⁾

CDMA, HPM

CDMA, LPM

26.7

15.7

27.5

16.5

-

dBm

dB

CDMA2000, RC-1

25

12

27

13

30

16

HPM, P^OUT= 27.5 dBm

LPM, POUT = 16.5 dBm

Gain

Adjacent Channel Power ⁽²⁾

at +1.25 MHz offset

Primary Channel BW - 1.23 MHz

Adjacent Channel BW = 30 kHz

-

-50

-53

-

HPM, P^OUT= 27.5 dBm

LPM, P^OUT= 16.5 dBm

dBc

Adjacent Channel Power ⁽²⁾

at +1.98 MHz

Primary Channel BW = 1.23 MHz

Adjacent Channel BW = 30 kHz

-

-55

-59

-

HPM, P^OUT= 27.5 dBm

LPM, POUT = 16.5 dBm

dBc

%

-

38

23

-

HPM, POUT = 27.5 dBm

LPM, POUT = 16.5 dBm

Power-Added Efﬁciency ⁽²⁾

P^OUT≤ +27.5 dBm

In-band load VSWR < 5:1

Out-of-band load VSWR < 10:1

Applies over all operating condi-

tions

Spurious Output Level

(all spurious outputs)

-

-70

-

dBc

Load mismatch stress with no

permanent degradation or failure

8:1

VSWR

Applies over full operating range

Notes:

(1) For operation at V^CC= +3.1 V, POUT is derated by 0.8 dB.

(2) ACLR and Efﬁciency measured at 1950 MHz.

Tableꢀ7:ꢀElectricalꢀSpeciﬁcationsꢀ-ꢀEVDOꢀRev.ꢀBꢀOperation

(TC

= +25 °C, VBATT = VCC = +3.4 V, VENABLE = +1.8 V, 50 Ω system, [10001] or [10101] Waveform)

PARAMETER

MIN

TYP

MAX

-41 dBm/300 KHz HPM, +18 dBm

-13 dBm/MHz HPM, +18 dBm

UNIT

COMMENTS

Spurious in PHS Band

(1884.5 - 1919.6 MHz)

-

-45

Intermodulation IM3

-23

Data Sheet - Rev 2.7

03/2012

6

AWT6631

Tableꢀ8:ꢀElectricalꢀSpeciﬁcationsꢀ-ꢀTD-LTEꢀOperation,ꢀBandꢀ39ꢀ(10ꢀMHzꢀQPSK,ꢀ12ꢀRB,ꢀStartꢀ=ꢀ0)

(TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VENABLEꢀ=ꢀ+1.8ꢀV,ꢀ50ꢀΩꢀsystem)

PARAMETER

MIN

TYP

MAX

UNITS

COMMENTS

1900

1880

-

1920

UMTS Band 33

UMTS Band 39

Operating Frequency (f)

MHz

RF Output Power (Pmax) ⁽¹⁾

LTE (MPR = 0), HPM

LTE (MPR = 0), LPM

26

15.5

27

16

27

16

dBm

dB

TS 36.101 Rel 8 for LTE

25

12

26.5

13

30

16

HPM, P^OUT= 27 dBm

LPM, POUT = 16 dBm

Gain

-

-37

-40

-36

HPM, POUT = 27 dBm

LPM, POUT = 16 dBm

LTE to LTE, E-UTRA ⁽²⁾

UTRA ACLR1 ⁽²⁾

UTRA ACLR2 ⁽²⁾

Power-Added Efﬁciency ⁽²⁾

dBc

%

-

-38

-40

-36

HPM, POUT = 27 dBm

LPM, POUT = 16 dBm

-

-60

-42

HPM, POUT = 27 dBm

LPM, POUT = 16 dBm

-

34

22

-

HPM, POUT = 27 dBm

LPM, P^OUT= 16 dBm

Quiescent Current (Icq)

Low Bias Mode

-

8

-

mA

through V^CCpin

Harmonics

2f^O

3fO, 4fO

-

-35

-50

dBc

POUT ≤ +27 dBm

P^OUT≤ +27 dBm

In-band load VSWR < 5:1

Out-of-band load VSWR < 10:1

Applies over all operating condi-

tions

Spurious Output Level

(all spurious outputs)

-

-70

-

Load mismatch stress with

no permanent degradation or

failure

8:1

VSWR

Applies over full operating range

Notes:

(1) For operation at VCC = +3.1 V, POUT is derated by 0.8 dB.

(2) ACLR and Efﬁciency measured at 1900 MHz.

Data Sheet - Rev 2.7

03/2012

7

AWT6631

Tableꢀ9:ꢀElectricalꢀSpeciﬁcationsꢀ-ꢀTD-LTEꢀOperation,ꢀBandꢀ34ꢀ(10ꢀMHzꢀQPSK,ꢀ12ꢀRB,ꢀStartꢀ=ꢀ0)

(TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VENABLEꢀ=ꢀ0ꢀV,ꢀ50ꢀΩꢀsystem)

PARAMETER

MIN

TYP

MAX

UNITS

COMMENTS

Operating Frequency (f)

2010

-

2025

MHz

Band 34

RF Output Power (Pmax) ⁽¹⁾

LTE (MPR = 0), HPM

LTE (MPR = 0), LPM

26

15.5

27

16

27

16

dBm

dB

TS 36.101 Rel 8 for LTE

25

12

27

13

30

16

HPM, P^OUT= 27 dBm

LPM, POUT = 16 dBm

Gain

-

-38

-36

HPM, POUT = 27 dBm

LPM, POUT = 16 dBm

LTE to LTE, E-UTRA ⁽²⁾

UTRA ACLR1 ⁽²⁾

UTRA ACLR2 ⁽²⁾

Power-Added Efﬁciency ⁽²⁾

dBc

%

-

-39

-38

-36

HPM, POUT = 27 dBm

LPM, POUT = 16 dBm

-

-62

-60

-42

HPM, POUT = 27 dBm

LPM, POUT = 16 dBm

-

35

23

-

HPM, POUT = 27 dBm

LPM, P^OUT= 16 dBm

Quiescent Current (Icq)

Low Bias Mode

-

8

-

mA

through V^CCpin

Harmonics

2f^O

3fO, 4fO

-

-35

-50

dBc

POUT ≤ +27 dBm

P^OUT≤ +27 dBm

In-band load VSWR < 5:1

Out-of-band load VSWR < 10:1

Applies over all operating condi-

tions

Spurious Output Level

(all spurious outputs)

-

-70

-

Load mismatch stress with

no permanent degradation or

failure

8:1

VSWR

Applies over full operating range

Notes:

(1) For operation at V^CC= +3.1 V, POUT is derated by 0.8 dB.

(2) ACLR and Efﬁciency measured at 2017.5 MHz.

Data Sheet - Rev 2.7

03/2012

8

AWT6631

Tableꢀ10:ꢀElectricalꢀSpeciﬁcationsꢀ-ꢀTD-SCDMAꢀOperation

(TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system)

PARAMETER

MIN

TYP

MAX

UNITS

COMMENTS

3GPP TS 25.12

Section 5.2a,f

Operating Frequency (f)

1880

-

1920

MHz

RF Output Power (Pmax) ⁽¹⁾

TD-SCDMA, HPM

TD-SCDMA, LPM

26.2

15.2

27

16

27

16

3GPP TS 25.62

Section 6.2.1

dBm

dB

25

12

27

13

30

16

HPM, P^OUT= 27 dBm

LPM, POUT = 16 dBm

Gain

-

-42

-

HPM, POUT = 27 dBm

LPM, P^OUT= 16 dBm

ACLR1 at 1.6 MHz offset ⁽²⁾

ACLR2 at 3.2 MHz offset ⁽²⁾

Power-Added Efﬁciency ⁽²⁾

dBc

%

-

-55

-

HPM, POUT = 27 dBm

LPM, P^OUT= 16 dBm

-

36

20

-

HPM, POUT = 27 dBm

LPM, P^OUT= 16 dBm

Quiescent Current (Icq)

Low Bias Mode

-

8

13

0.5

5

mA

µA

V^MODE1= +1.8 V

through V^MODEpin, VMODE1 =

+1.8 V

Mode Control Current

Enable Current

0.3

2.5

4

through V^ENABLEpin, VEN =

+1.8 V

through V^BATTpin, VMODE1 =

+1.8 V

BATT Current

V^BATT= +4.2 V, VCC = +4.2 V

V^ENABLE= 0 V, VMODE1 = 0 V

Leakage Current

-

Harmonics

2f^O

3fO, 4fO

-

-35

-50

dBc

P^OUT≤ +27 dBm

Input Impedance

-

2:1

VSWR

Load mismatch stress with

no permanent degradation or

failure

Applies over full operating

range

8:1

-

VSWR

Notes:

(1) For operation at VCC = +3.1 V, POUT is derated by 0.8 dB.

(2) ACLR and Efﬁciency measured at 1900 MHz.

Data Sheet - Rev 2.7

03/2012

9

AWT6631

Tableꢀ11:ꢀElectricalꢀSpeciﬁcationsꢀ-ꢀTD-SCDMAꢀOperation

(TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system)

PARAMETER

MIN

TYP

MAX

UNITS

COMMENTS

3GPP TS 25.102

Section 5.2a

Operating Frequency (f)

2010

-

2025

MHz

RF Output Power (Pmax) ⁽¹⁾

TD-SCDMA, HPM

TD-SCDMA, LPM

26.2

15.2

27

16

27

16

3GPP TS 25.62

Section 6.2.1

dBm

dB

25

12

27

13

30

16

HPM, P^OUT= 27 dBm

LPM, P^OUT= 16 dBm

Gain

-

-42

-

HPM, POUT = 27 dBm

LPM, P^OUT= 16 dBm

ACLR1 at 1.6 MHz offset ⁽²⁾

ACLR2 at 3.2 MHz offset ⁽²⁾

Power-Added Efﬁciency ⁽²⁾

dBc

%

-

-55

-

HPM, POUT = 27 dBm

LPM, POUT = 16 dBm

-

36

20

-

HPM, POUT = 27 dBm

LPM, POUT = 16 dBm

Quiescent Current (Icq)

Low Bias Mode

-

8

13

0.5

5

mA

µA

V^MODE1= +1.8 V

through V^MODEpin, VMODE1 =

+1.8 V

Mode Control Current

Enable Current

0.3

2.5

4

through V^ENABLEpin, VEN =

+1.8 V

through V^BATTpin, VMODE1 =

+1.8 V

BATT Current

V^BATT= +4.2 V, VCC = +4.2 V

VENABLE = 0 V, VMODE1 = 0 V

Leakage Current

-

Harmonics

2f^O

3fO, 4fO

-

-35

-50

dBc

POUT ≤ +27 dBm

Input Impedance

-

2:1

VSWR

Load mismatch stress with

no permanent degradation or

failure

Applies over full operating

range

8:1

-

VSWR

Notes:

(1) For operation at VCC = +3.1 V, POUT is derated by 0.8 dB.

(2) ACLR and Efﬁciency measured at 2012.5 MHz.

Data Sheet - Rev 2.7

03/2012

10

AWT6631

APPLICATION INFORMATION

To ensure proper performance, refer to all related logic level (see Operating Ranges table) to VMODE1

.

Application Notes on the ANADIGICS web site: The Bias Control table lists the recommended modes

http://www.anadigics.com

of operation for various applications. V^MODE2is not

necessary for this PA.

Shutdown Mode

The power ampliﬁer may be placed in a shutdown Two operating modes are available to optimize current

mode by applying logic low levels (see Operating consumption. High Bias/High Power operating mode

Ranges table) to the V^ENABLEand VMODE1 voltages.

is for P^OUTlevels > 16 dBm. At around 17 dBm output

power, the PAshould be “Mode Switched” to Low power

mode for lowest quiescent current consumption.

Bias Modes

The power ampliﬁer may be placed in either a Low Bias

mode or a High Bias mode by applying the appropriate

Vcontrols

Venable/Vmode(s)

Rise/Fall Max 1µS

Defined at 10% to 90%

of Min/Max Voltage

On Sequence Start

T_0N=0µ

Off Sequence Start

T_0FF=0µ

ON Sequence

OFF Sequence

RFIN

notes 1,2

VEN

VCC

note 1

T_0N+1µS

T_0N+3µS

T_0FF+2µS T_0FF+3µS

Referenced After 90%of Rise

Time

Referenced Before10%of Fall

Time

Figure 3: Recommended ON/OFF Timing Sequence

Notes:

(1) Level might be changed after RF is ON.

(2) RF OFF deﬁned as PIN ≤ -30 dBm.

(3) Switching simultaneously between VMODE and VEN is not recommended.

Data Sheet - Rev 2.7

03/2012

11

AWT6631

Table 12: Bias Control (CDMA, WCDMA and LTE)

POUT

LEVELS

APPLICATION

BIAS MODE

High

VENABLE

+1.8 V

0 V

VMODE1

0 V

VCC

VBATT

High power

(High Bias Mode)

> +16 dBm

1.5 - 4.35 V

0.5 - 4.35 V

> 3.1 V

Med/low power

(Low Bias Mode)

 +17 dBm

Low

+1.8 V

0 V

Shutdown

-

Shutdown

Table 13: Bias Control (TD-SCDMA)

P

OUT

APPLICATION

BIAS MODE

High

V

ENABLE

V

MODE1

V

CC

V

BATT

LEVELS

TD-SCDMA - high power

(High Bias Mode)

> +15 dBm

+1.8 V

0 V

1.5 - 4.35 V

0.5 - 4.35 V

0.5 -4..35 V

> 3.1 V

> 3.1V

> 3.1 V

TD-SCDMA - med/low

power (Low Bias Mode)

+16 dBm

Low

+1.8 V

0 V

Shutdown

-

Shutdown

Data Sheet - Rev 2.7

03/2012

12

AWT6631

PERFROMANCE DATA:

Figure 5: WCDMA Gain (dB) over Voltage

Figure 4: WCDMA Gain (dB) over Temperature

(T^C= 25 8C)

(VBATT = VCC = 3.4 V)

-30C 3.4Vcc

30

25

20

15

10

25C 3.2Vcc

25C 3.4Vcc

25C 4.2Vcc

25C 3.0Vcc

28

25C 3.4Vcc

26

90C 3.4Vcc

24

22

20

18

16

14

12

10

0

5

10

15

20

25

30

0

5

10

15

20

25

30

Pout(dBm)

Figure 6: WCDMA PAE (%) over Temperature

(V^BATT= VCC = 3.4 V)

Figure 7: WCDMA PAE (%) over Voltage

(TC = 25 8C)

50

45

50

-30 3.4cc

25C 3.2Vcc

25C 3.4Vcc

25C 4.2Vcc

25C 3.0Vcc

45

25C 3.4Vcc

40

35

30

25

20

15

10

5

40

35

30

25

20

15

10

5

90C 3.4Vcc

0

5

10

15

20

25

30

0

5

10

15

20

25

30

Pout(dBm)

Figure 8: WCDMA ACLR1 (dBc) over Temperature

(VBATT = VCC = 3.4 V)

Figureꢀ9:ꢀꢀWCDMAꢀACLR1ꢀ(dBc)ꢀoverꢀVoltage

(T^C= 25 8C)

-30

-25

-30C 3.4Vcc

25C 3.4Vcc

-35

-40

-45

-50

-55

90C 3.4Vcc

-30

25C 3.2Vcc

25C 3.4Vcc

-35

25C 4.2Vcc

25C 3.0Vcc

-40

-45

-50

-55

0

5

10

15

20

25

30

0

5

10

15

20

25

30

Pout(dBm)

Data Sheet - Rev 2.7

03/2012

13

AWT6631

VBATT

VCC

C2

0.1µF

C1

C3

C5

2.2 µF

GND at slug

33pF

2.2µFceramic

1

2

10

9

V

BATT

V

CC

RFIN

RFOUT

3

4

5

8

7

6

CPL^IN

GND

V

MODE2 (N/C)

CPLIN

V

MODE1

CPLOUT

VEN

CPLOUT

EN

Figure 10: Evaluation Board Schematic

RFOUT

C3

C6

C1

C2

RFIN

C4

CPLIN

Figure 11: Evaluation Board Layout

Data Sheet - Rev 2.7

03/2012

14

AWT6631

HELP3DC^TM

voltage source. The PA is turn on/off is controlled

by V^ENpin. A single VMODE control logic (VMODE1) is

needed to operate this device. AWT6631 requires

only two calibration sweeps for system calibration,

thus saving calibration time.

The AWT6631 power ampliﬁer module is based on

ANADIGICS proprietary HELP3DC™ technology.

The PAis designed to operate up to 17 dBm in the low

power mode, thus eliminating the need for three gain

states, while still maintaining low quiescent current

and high efﬁciency in low and medium power levels.

Average weighted efﬁciency can be increased by

using an external switch mode power supply (SMPS)

or DC/DC converter to reduce V^CC.

Figure 5 shows one application example on mobile

board. C1 and C2 are RF bypass caps and should

be placed nearby pin 1 and pin 10. Bypass caps

C4 and C5 may not be needed. Also a “T” matching

topology is recommended at PA RF^INand RFOUT

ports to provide matching between input TX Filter and

Duplexer / Isolator.

The directional “daisy chainable” coupler is integrated

within the PA module, therefore there is no need for

external couplers.

The AWT6631 has an integrated voltage regulator,

which eliminates the need for an external constant

SMPS

VBATT

C6

C1

C2

C3

GND

at slug

GND

RF_OUT

V_CC

RF_OUT

V_BATT

RF_IN

TX filter

Duplexer

Input

Matching

Output

Matching

V_MODE2

CPL_IN

50Ω

V_MODE1

V_EN

GND

CPL_OUT

C5

GND

BB

To

Detector

PA_R0

PA_0N

C4

GND

Figure 12: Typical Application Circuit

Data Sheet - Rev 2.7

03/2012

15

AWT6631

PACKAGEꢀOUTLINE

Figure 13: Package Outline - 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module

Part Number

6631

LLLLNN

YYWWCC

Pin 1 Identifier

Lot Number

Date Code

YY=Year; WW=Work week

Country Code (CC)

Figureꢀ14:ꢀBrandingꢀSpeciﬁcation

Data Sheet - Rev 2.7

03/2012

16

AWT6631

PCB AND STENCIL DESIGN GUIDELINE

Figure 15: Recommended PCB Layout Information

Data Sheet - Rev 2.7

03/2012

17

AWT6631

COMPONENTꢀPACKAGING

Pin 1

Figure 16: Carrier Tape

Figure 17: Reel

Data Sheet - Rev 2.7

03/2012

18

AWT6631

ORDERING INFORMATION

TEMPERATURE

PACKAGE

DESCRIPTION

ORDER NUMBER

COMPONENTꢀPACKAGING

RANGE

RoHS Compliant 10 Pin

3 mm x 3 mm x 1 mm Tape and Reel, 2500 pieces per Reel

AWT6631Q7

-30 ^oC to +90 ^oC

Surface Mount Module

RoHS Compliant 10 Pin

3 mm x 3 mm x 1 mm Partial Tape and Reel

Surface Mount Module

AWT6631P9

-30 ^oC to +90 ^oC

anaDigiCS, iꢀc.

141 Mount Bethel Road

Warren, New Jersey 07059, U.S.A.

Tel: +1 (908) 668-5000

Fax: +1 (908) 668-5132

URL: http://www.anadigics.com

iMPOrTanT nOTiCE

ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.

The product speciﬁcations contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to

change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed

to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers

to verify that the information they are using is current before placing orders.

warning

ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of anANADIGICS product

in any such application without written consent is prohibited.

Data Sheet - Rev 2.7

03/2012

19


型号：	AWT6631Q7
厂家：	ANADIGICS, INC
描述：	HELP3DC UMTS2100 (Band 1) LTE/WCDMA/CDMA/TD-SCDMA Linear PAM HELP3DC UMTS2100 （频段1 ） LTE / WCDMA / CDMA / TD -SCDMA线性PAM 电信集成电路光电二极管 CD LTE
文件：	总19页 (文件大小：765K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AWT6631Q7 [ANADIGICS]

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