AWT6635 [ANADIGICS]

HELP3DCTM (Band 5) LTE/WCDMA/CDMA Linear PA Module; HELP3DCTM (第五级)的LTE / WCDMA / CDMA线性功率放大器模块
AWT6635
型号: AWT6635
厂家: ANADIGICS, INC    ANADIGICS, INC
描述:

HELP3DCTM (Band 5) LTE/WCDMA/CDMA Linear PA Module
HELP3DCTM (第五级)的LTE / WCDMA / CDMA线性功率放大器模块

放大器 功率放大器 CD LTE
文件: 总14页 (文件大小:882K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
AWT6635  
HELP3DCTM (Band 5)  
LTE/WCDMA/CDMA Linear PA Module  
PRELIMINARY DATASHEET - Rev 1.3  
FEATURES  
CDMA/EVDO, WCDMA/HSPA and LTE  
compliant  
3rd Generation HELPTM technology  
ꢀ HighꢀEfficiency:ꢀ(R99ꢀwaveform)  
•ꢀꢀ40ꢀ%ꢀ@ꢀPOUT = +28.5 dBm  
A
W
T6635  
•ꢀꢀ21.5ꢀ%ꢀ@ꢀPOUTꢀ=ꢀ+17ꢀdBm  
•ꢀ SimplerꢀCalibrationꢀwithꢀonlyꢀ2ꢀBiasꢀmodes  
Optimized for SMPS Supply  
ꢀ LowꢀQuiescentꢀCurrent:ꢀ9ꢀmA  
ꢀ LowꢀLeakageꢀCurrentꢀinꢀShutdownꢀMode:ꢀ<5ꢀµA  
ꢀ InternalꢀVoltageꢀRegulator  
•ꢀ Integratedꢀ“daisyꢀchainable”ꢀdirectionalꢀcouplersꢀ  
withꢀCPLIN and CPLOUTꢀPorts  
10 Pin 3 mm x 3 mm x 1 mm  
Surface Mount Module  
ꢀ Optimizedꢀforꢀaꢀ50ꢀꢀSystemꢀ  
ꢀ LowꢀProfileꢀMiniatureꢀSurfaceꢀMountꢀPackage  
•ꢀ InternalꢀDCꢀblocksꢀonꢀIN/OUTꢀRFꢀports  
•ꢀ 1.8ꢀVꢀControlꢀLogic  
ruggedness.Therearetwoselectablebiasmodesꢀ  
thatꢀ optimizeꢀ efficiencyꢀ forꢀ differentꢀ outputꢀ powerꢀ  
levels,ꢀandꢀaꢀshutdownꢀmodeꢀwithꢀlowꢀleakageꢀcurrent,ꢀ  
whichꢀincreasesꢀhandsetꢀtalkꢀandꢀstandbyꢀtime.ꢀTheꢀ  
self-containedꢀꢀ3ꢀmmꢀxꢀ3ꢀmmꢀxꢀ1ꢀmmꢀsurfaceꢀmountꢀ  
packageꢀincorporatesꢀmatchingꢀnetworksꢀoptimizedꢀforꢀ  
outputꢀpower,ꢀefficiency,ꢀandꢀlinearityꢀinꢀaꢀ50ꢀꢀsystem.  
ꢀ RoHSꢀCompliantꢀPackage,ꢀ260ꢀoC MSL-3  
APPLICATIONS  
ꢀ WirelessꢀHandsetsꢀandꢀDataꢀDevicesꢀfor:  
ꢀꢀꢀꢀꢀ• WCDMA/HSPA and LTE Cell-Band  
GND at Slug (pad)  
ꢀꢀCDMA/EVDOꢀBandꢀClassꢀ0ꢀ&ꢀ10  
1
2
3
4
5
10  
9
V
BATT  
VCC  
PRODUCT DESCRIPTION  
TheAWT6635ꢀPAꢀisꢀdesignedꢀtoꢀprovideꢀhighlyꢀlinearꢀ  
outputforWCDMA,CDMAandLTEhandsetsandꢀ  
datadeviceswithhighefficiencyatbothhighandꢀ  
lowꢀ powerꢀ modes.ꢀ Thisꢀ HELP3DCTM PA can be  
usedꢀ withꢀ anꢀ externalꢀ switchꢀ modeꢀ powerꢀ supplyꢀ  
(SMPS)ꢀtoꢀimproveꢀitsꢀefficiencyꢀandꢀreduceꢀcurrentꢀ  
consumptionꢀ furtherꢀ atꢀ mediumꢀ andꢀ lowꢀ outputꢀ  
powers.Adaisychainable”ꢀ directionalꢀ couplerisꢀ  
integratedinthemodulethuseliminatingtheneedꢀ  
ofꢀexternalꢀcouplers.ꢀTheꢀdeviceꢀisꢀmanufacturedꢀonꢀ  
anꢀadvancedꢀInGaPꢀHBTꢀMMICꢀtechnologyꢀofferingꢀ  
state-of-the-artreliability,temperaturestability,andꢀ  
CPL  
RFIN  
RFOUT  
CPLIN  
GND  
Bias Control  
8
V
MODE2 (N/C)  
Voltage Regulation  
7
V
MODE1  
6
V
EN  
CPLOUT  
Figure 1: Block Diagram  
02/2012  
AWT6635  
1
2
10  
9
V
BATT  
V
CC  
RFIN  
RFOUT  
CPLIN  
3
4
8
V
MODE2 (N/C)  
7
6
V
MODE1  
GND  
5
VEN  
CPLOUT  
Figure 2: Pinout (X-ray Top View)  
Table 1: Pin Description  
PIN  
1
NAME  
DESCRIPTION  
Battery Voltage  
RFꢀInput  
V
BATT  
2
RFIN  
3
VMODE2 (N/C) No Connection  
4
V
MODE1  
ModeꢀControlꢀVoltageꢀ1  
PA Enable Voltage  
Coupler Output  
Ground  
5
V
EN  
6
CPLOUT  
GND  
7
8
CPLIN  
RFOUT  
Coupler Input  
9
RFꢀOutput  
10  
V
CC  
Supply Voltage  
2
PRELIMINARY DATASHEET - Rev 1.3  
02/2012  
AWT6635  
ELECTRICAL CHARACTERISTICS  
Table 2: Absolute Minimum and Maximum Ratings  
PARAMETER  
MIN  
0
MAX  
+5  
UNIT  
V
Supply Voltage (VCC  
)
Battery Voltage (VBATT  
ControlꢀVoltagesꢀ(VMODE1, VENABLE  
RFꢀInputꢀPowerꢀ(PIN  
Storage Temperature (TSTG  
)
0
+6  
V
)
0
+3.5  
+10  
+150  
V
)
-
dBm  
°C  
)
-40  
Stresses in excess of the absolute ratings may cause permanent damage.  
Functional operation is not implied under these conditions. Exposure  
to absolute ratings for extended periods of time may adversely affect  
reliability.  
Table 3: Operating Ranges  
PARAMETER  
MIN  
814  
TYP  
-
MAX  
849  
UNIT  
MHz  
V
COMMENTS  
Operating Frequency (f)  
Supply Voltage (VCC  
)
+0.5  
+3.1  
+3.4  
+3.4  
+4.35  
+4.35  
P
P
OUT +28.5 dBm  
OUT +28.5 dBm  
Battery Voltage (VBATT  
)
V
+1.35  
0
+1.8  
0
+3.1  
+0.5  
PA "on"  
Enable Voltage (VENABLE  
Mode Control Voltage (VMODE1  
RF Output Power (POUT  
)
V
V
PA "shut down"  
+1.35  
0
+1.8  
0
+3.1  
+0.5  
Low Bias Mode  
High Bias Mode  
)
)
R99 WCDMA, HPM  
HSPA (MPR=0), HPM  
LTE, HPM  
R99 WCDMA, LPM  
HSPA (MPR=0), LPM  
LTE, LPM  
27.7(1)  
26.7(1)  
26.7(1)  
16.2(1)  
15.2(1)  
15.2(1)  
28.5  
27.5  
27.5  
17  
16  
16  
28.5  
27.5  
27.5  
17  
16  
16  
3GPP TS 34.121-1, Rel 8  
Ta ble C.11.1.3 for WCDMA  
SUBTEST 1  
dBm  
TS 36.101 Rel 8 for LTE  
CDMA Output Power  
HPM  
LPM  
26.7(1)  
15.2(1)  
27.5  
16.0  
27.5  
16.0  
dBm  
°C  
CDMA2000, RC1  
Case Te mperature (T  
C
)
-30  
-
+90  
The device may be operated safely over these conditions; however, parametric performance is guaranteed only over  
theꢀconditionsꢀdefinedꢀinꢀtheꢀelectricalꢀspecifications.  
Notes:  
(1) For operation at Vcc = +3.1 V, Pout is derated by 0.8 dB.  
3
PRELIMINARY DATASHEET - Rev 1.3  
02/2012  
AWT6635  
Tableꢀ4:ꢀElectricalꢀSpecificationsꢀ-ꢀWCDMAꢀOperationꢀ(R99ꢀwaveform)  
(T  
C
= +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VENABLE = +1.8 V, 50 system)  
COMMENTS  
PARAMETER  
MIN  
TYP  
MAX  
UNIT  
P
OUT  
V
MODE1  
25.5  
13  
28.5  
16  
31  
18  
+28.5 dBm  
+17 dBm  
0 V  
1.8 V  
Gain  
dB  
-
-
-41  
-41  
-38  
-38  
dBc  
+28.5 dBm  
+17 dBm  
0 V  
1.8 V  
ACLR1 at 5 MHz offset (1)  
-
-
-56  
-56  
-48  
-48  
+28.5 dBm  
+17 dBm  
0 V  
(1)  
ACLR2 at 10 MHz offset  
dBc  
%
1.8 V  
-
-
40  
21.5  
-
-
+28.5 dBm  
+17 dBm  
0 V  
1.8 V  
Power-Added Efficiency (1)  
Quiescent Current (Icq)  
Low Bias Mode  
-
-
9
11  
mA  
mA  
V
MODE1 = +1.8 V  
Mode Control Current  
0.06  
0.15  
through VMODE pin, VMODE1 = +1.8 V  
Enable Current  
BATT Current  
-
-
0.4  
3.0  
0.6  
5
mA  
mA  
through VENABLE pin  
through VBATT pin, VMODE1 = +1.8 V  
V
V
BATT = +4.2 V, VCC = +4.2 V,  
ENABLE = 0 V, VMODE1 = 0 V  
Leakage Current  
-
4
-
µA  
-
-
-133  
-137  
-131 dBm/Hz  
-135 dBm/Hz  
P
P
OUT < +28.5 dBm, VMODE1 = 0V  
OUT < 17 dBm, VMODE1 = +1.8 V  
Noise in Receive Band(2)  
Harmonics  
2fo  
3fo, 4fo  
-
-
-40  
-60  
-35  
dBc  
-45  
P
OUT < +28.5 dBm  
Input Impedance  
Coupling Factor  
Directivity  
-
-
-
-
2:1  
VSWR  
dB  
20  
20  
-
-
dB  
Coupler In-Out  
Daisy Chain  
Insertion Loss  
698 MHz to 2620 MHz  
Pin 8 to 6  
-
-
<0.25  
-
-
dB  
Shutdown Mode  
P
OUT < +28.5 dBm  
Spurious Output Level  
(all spurious outputs)  
In-band load VSWR < 5:1  
-70  
dBc  
Out-of-band load VSWR < 10:1  
Applies over all operating conditions  
Load mismatch stress with no  
permanent degradation or failure  
8:1  
-
-
-
-
VSWR Applies over full operating range  
Deg  
Phase Delta (HPM-LPM)  
10  
Notes:  
(1) ACLR and Efficiency measured at 836.5 MHz.  
(2) 869 MHz to 894 MHz.  
4
PRELIMINARY DATASHEET - Rev 1.3  
02/2012  
AWT6635  
Tableꢀ5:ꢀElectricalꢀSpecificationsꢀ-ꢀLTEꢀOperationꢀ(RBꢀ=ꢀ12,ꢀSTARTꢀ=ꢀ0,ꢀQPSK)  
(T  
C
= +25 °C, VCC = VBATT = +3.4 V, VENABLE = +1.8 V, 50 system)  
COMMENTS  
PARAMETER  
MIN  
TYP  
MAX  
UNIT  
P
OUT  
V
MODE1  
25.5  
13  
28.5  
16  
31  
18  
+27.5 dBm  
+16ꢀdBm  
0ꢀV  
1.8 V  
Gain  
dB  
dBc  
dBc  
dBc  
%
ACLR E-UTRA  
at ꢀ10ꢀMHz offset  
-
-
-39  
-38  
-
-
+27.5 dBm  
+16ꢀdBm  
0ꢀV  
1.8 V  
ACLR1ꢀUTRA (1)  
at ꢀ7.5 MHz offset  
-
-
-40  
-39  
-
-
+27.5 dBm  
+16ꢀdBm  
0ꢀV  
1.8 V  
ACLR2 UTRA  
at ꢀ12.5 MHz offset  
-
-
-60  
-60  
-
-
+27.5 dBm  
+16ꢀdBm  
0ꢀV  
1.8 V  
-
-
36  
19  
-
-
+27.5ꢀdBm  
+16ꢀdBm  
0ꢀV  
1.8 V  
Power-Added Efficiency (1)  
P
OUT +27.5 dBm  
Spurious Output Level  
(all spurious outputs)  
In-band load VSWRꢀ<ꢀ5:1  
Out-of-band load VSWRꢀ<ꢀ10:1  
Appliesꢀover all operating conditions  
-
-
<-70  
dBc  
Load mismatchꢀstressꢀwith no  
permanent degradation or failure  
8:1  
-
-
VSWR Appliesꢀover full operating range  
Notes:  
(1) ACLR and Efficiency measured at 836.5 MHz.  
5
PRELIMINARY DATASHEET - Rev 1.3  
02/2012  
AWT6635  
Tableꢀ6:ꢀElectricalꢀSpecificationsꢀ-ꢀCDMA2000ꢀOperationꢀ(RC-1ꢀwaveform)  
(TC  
= +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VENABLE = +1.8 V, 50 system)  
COMMENTS  
PARAMETER  
MIN  
TYP MAX  
UNIT  
P
OUT  
V
MODE1  
25.5  
13  
28.5  
16  
31  
18  
P
P
OUT = +27.5 dBm 0ꢀV  
Gain  
dB  
OUT = +16 dBm  
1.8 V  
Adjacent Channel Power  
at 885 kHz offset (1)  
Primary Channel BW =ꢀ1.23 MHZ  
Adjacent Channel BW = 30ꢀkHz  
-
-
-51  
-50  
-
-
P
P
OUT = +27.5 dBm  
OUT = +16ꢀdBm  
0ꢀV  
1.8 V  
dBc  
Adjacent Channel Power  
at 1.98ꢀMHz offset (1)  
Primary Channel BW =ꢀ1.23 MHZ  
Adjacent Channel BW = 30ꢀkHz  
-
-
-61  
-59  
-
-
P
P
OUT = +27.5 dBm  
OUT = +16ꢀdBm  
0ꢀV  
1.8 V  
dBc  
%
-
-
36  
19  
-
-
P
P
OUT = +27.5 dBm 0ꢀV  
OUT = +16 dBm 1.8 V  
Power-Added Efficiency (1)  
POUTꢀ< +27.5 dBm  
Spurious Output Level  
(all spurious outputs)  
In-band Load VSWRꢀ<ꢀ5:1  
Out-of-band Load VSWRꢀ<ꢀ10:1  
Appliesꢀover all operating conditions  
-
-
-70  
dBc  
Load mismatchꢀstressꢀwith no  
permanent degradation or failure  
8:1  
-
-
VSWR Appliesꢀover all operating conditions  
6
PRELIMINARY DATASHEET - Rev 1.3  
02/2012  
AWT6635  
PERFORMANCE DATA PLOTS:  
(WCDMA Operation at 836.5 MHz and 50 V system)  
Figure 4: WCDMA Gain (dB) over Temperature  
(VBATT = VCC = 3.4 V)  
Figure 3: WCDMA Gain (dB) over Temperature  
(VBATT = VCC = 3.4 V)  
35  
30  
25  
20  
15  
25C 3.2Vcc  
-30Cꢀ3.4Vcc  
25Cꢀ3.4Vcc  
25Cꢀ4.2Vcc  
25Cꢀ3.0Vcc  
25Cꢀ3.4Vccꢀ  
30  
90Cꢀ3.4Vccꢀ  
25  
20  
15  
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
Pout(dBm)  
Pout(dBm)  
Figure 5: WCDMA PAE (%) over Temperature  
(VBATT = VCC = 3.4 V)  
Figure 6: WCDMA PAE (%) over Temperature  
(VBATT = VCC = 3.4 V)  
50  
50  
-30ꢀ3.4cc  
25C 3.2Vcc  
45  
25Cꢀ3.4Vcc  
25Cꢀ3.4Vcc  
40  
40  
30  
20  
10  
0
90Cꢀ3.4Vcc  
25Cꢀ4.2Vcc  
35  
30  
25  
20  
15  
10  
5
25Cꢀ3.0Vcc  
0
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
Pout(dBm)  
Pout(dBm)  
Figure 7: WCDMA ACLR1 (dBc) over Temperature  
Figure 8: WCDMA ACLR1 (dBc) over Temperature  
(VBATT = VCC = 3.4 V)  
(VBATT = VCC = 3.4 V)  
-25  
-25  
-30Cꢀ3.4Vcc  
25C 3.2Vcc  
25Cꢀ3.4Vcc  
-30  
25Cꢀ3.4Vcc  
-30  
90Cꢀ3.4Vccꢀ  
25Cꢀ4.2Vccꢀ  
-35  
-35  
25Cꢀ3.0Vcc  
-40  
-45  
-50  
-55  
-60  
-40  
-45  
-50  
-55  
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
Pout(dBm)  
Pout(dBm)  
7
PRELIMINARY DATASHEET - Rev 1.3  
02/2012  
AWT6635  
APPLICATION INFORMATION  
Toꢀ ensureproperperformance,ꢀ referꢀ toꢀ allꢀ relatedꢀ  
Applicationꢀ Notesꢀ onꢀ theꢀANADIGICSꢀ webꢀ site:ꢀ  
http://www.anadigics.com  
logiclevel(seeOperatingRangestable)toVMODE1  
.
TheꢀBiasꢀControlꢀtableꢀlistsꢀtheꢀrecommendedꢀmodesꢀ  
ofoperationforvariousapplications.VMODE2isnotꢀ  
necessaryꢀforꢀthisꢀPA.  
Shutdown Mode  
Thepoweramplifiermaybeplacedinashutdownꢀ  
modeꢀ byꢀ applyingꢀ logicꢀ lowꢀ levelsꢀ (seeꢀ Operatingꢀ  
Rangesꢀtable)ꢀtoꢀtheꢀVENABLE and VMODE1ꢀvoltages.  
Twoꢀoperatingꢀmodesꢀareꢀavailableꢀtoꢀoptimizeꢀcurrentꢀ  
consumption.ꢀHighꢀBias/HighꢀPowerꢀoperatingꢀmodeꢀ  
isꢀforꢀPOUTꢀlevelsꢀ>ꢀ16ꢀdBm.ꢀAtꢀaroundꢀ17ꢀdBmꢀoutputꢀ  
power,ꢀtheꢀPAꢀcanꢀbeꢀ“ModeꢀSwitched”ꢀtoꢀLowꢀpowerꢀ  
modeꢀforꢀlowestꢀquiescentꢀcurrentꢀconsumption.  
Bias Modes  
TheꢀpowerꢀamplifierꢀmayꢀbeꢀplacedꢀinꢀeitherꢀaꢀLowꢀBiasꢀ  
modeꢀorꢀaꢀHighꢀBiasꢀmodeꢀbyꢀapplyingꢀtheꢀappropriateꢀ  
Vcontrols  
Venable/Vmode(s)  
Rise/Fall Max 1µS  
Defined at 10% to 90%  
of Min/Max Voltage  
On Sequence Start  
T_0N=0µ  
Off Sequence Start  
T_0FF=0µ  
ON Sequence  
OFF Sequence  
RFIN  
notes 1,2  
V
EN  
VCC  
note 1  
T_0N+1µS  
T_0N+3µS  
T_0FF+2µS T_0FF+3µS  
Referenced After 90%of Rise  
Time  
Referenced Before10%of Fall  
Time  
Figureꢀ9:ꢀRecommendedꢀON/OFFꢀTimingꢀSequence  
Notes:  
(1) Level might be changed after RF is ON.  
(2) RF OFF defined as PIN ≤ -30 dBm.  
(3) Switching simultaneously between VMODE and VEN is not recommended.  
Table 7: Bias Control  
P
OUT  
BIAS  
MODE  
APPLICATION  
V
ENABLE  
V
MODE1  
V
CC  
V
BATT  
LEVELS  
Highꢀpower  
(HighꢀBiasꢀMode)  
>ꢀ+16ꢀdBm  
High  
+1.8ꢀV  
0ꢀV  
1.5ꢀ-ꢀ4.35ꢀV  
>ꢀ3.1ꢀV  
Med/lowꢀpower  
(LowꢀBiasꢀMode)  
+17ꢀdBm  
Low  
+1.8ꢀV  
0ꢀV  
+1.8ꢀV  
0ꢀV  
0.5ꢀ-ꢀ4.35ꢀV  
0.5ꢀ-ꢀ4.35ꢀV  
>ꢀ3.1ꢀV  
>ꢀ3.1ꢀV  
Shutdown  
-
Shutdown  
8
PRELIMINARY DATASHEET - Rev 1.3  
02/2012  
AWT6635  
VBATT  
VCC  
C2  
0.1µF  
C1  
C3  
C5  
2.2 µF  
GND at slug  
33pF  
2.2µFceramic  
1
2
10  
9
V
BATT  
V
CC  
RFIN  
RFIN  
RFOUT  
RFOUT  
3
4
5
8
7
6
V
V
V
MODE2 (N/C) CPLIN  
CPLIN  
GND  
V
MODE1  
MODE1  
CPLOUT  
EN  
VEN  
CPLOUT  
C4  
0.01 µF  
Figure 10: Evaluation Circuit Schematic  
RFOUT  
C3  
C6  
C1  
C2  
RFIN  
C4  
CPLIN  
Figure 11: Evaluation Board Layout  
9
PRELIMINARY DATASHEET - Rev 1.3  
02/2012  
AWT6635  
HELP3DCTM  
TheꢀAWT6635poweramplifiermoduleisbasedonꢀ  
ANADIGICS proprietary HELP3DC™ technology.  
TheꢀPAꢀisꢀdesignedꢀtoꢀoperateꢀupꢀtoꢀ17ꢀdBmꢀinꢀtheꢀlowꢀ  
powerꢀmode,ꢀthusꢀeliminatingꢀtheꢀneedꢀforꢀthreeꢀgainꢀ  
state,ꢀ whileꢀ stillꢀ maintainingꢀ lowꢀ quiescentꢀ currentꢀ  
andꢀhighꢀefficiencyꢀinꢀlowꢀandꢀmediumꢀpowerꢀlevels.ꢀ  
Averageꢀ weightedꢀ efficiencyꢀ canꢀ beꢀ increasedꢀ byꢀ  
usingꢀanꢀexternalꢀswitchꢀmodeꢀpowerꢀsupplyꢀ(SMPS)ꢀ  
orꢀDC/DCꢀconverterꢀtoꢀreduceꢀVCC.  
voltageꢀ source.ꢀ Theꢀ PAꢀ isꢀ turnꢀ on/offꢀ isꢀ controlledꢀ  
by VENpin.ꢀAsingleVMODE control logic (VMODE1)isꢀ  
neededꢀtoꢀoperateꢀthisꢀdevice.  
AWT6635ꢀ requiresꢀ onlyꢀ twoꢀ calibrationꢀ sweepsꢀ forꢀ  
systemꢀcalibration,ꢀthusꢀsavingꢀcalibrationꢀtime.ꢀ  
Figureꢀ11ꢀshowsꢀoneꢀapplicationꢀexampleꢀonꢀmobileꢀ  
board.C1andC2areRFbypasscapsandshouldꢀ  
beꢀ placedꢀ nearbyꢀ pinꢀ 1ꢀ andꢀ pinꢀ 10.ꢀ Bypassꢀ capsꢀ  
C4ꢀandꢀC5ꢀmayꢀnotꢀbeꢀneeded.ꢀAlsoꢀaꢀ“T”ꢀmatchingꢀ  
topologyꢀ isꢀ recommendedꢀ atꢀ PAꢀ RFINꢀ andꢀ RFOUT  
portsꢀtoꢀprovideꢀmatchingꢀbetweenꢀinputꢀTXꢀFilterꢀandꢀ  
Duplexerꢀ/ꢀIsolator.  
Theꢀdirectionalꢀ“daisyꢀchainable”ꢀcouplerꢀisꢀintegratedꢀ  
withinꢀtheꢀPAꢀmodule,ꢀthereforeꢀthereꢀisꢀnoꢀneedꢀforꢀ  
externalꢀcouplers.  
TheAWT6635ꢀ hasꢀ anꢀ integratedꢀ voltageꢀ regulator,ꢀ  
whichꢀ eliminatesꢀ theꢀ needꢀ forꢀ anꢀ externalꢀ constantꢀ  
SMPS  
VBATT  
C6  
C1  
C2  
C3  
GND  
at slug  
GND  
GND  
GND  
GND  
RFOUT  
VCC  
RFOUT  
VBATT  
RFIN  
RFIN  
TX filter  
Duplexer  
Input  
Matching  
Output  
Matching  
VMODE2  
CPLIN  
50Ω  
VMODE1  
VEN  
GND  
CPLOUT  
C5  
GND  
GND  
BB  
To  
Detector  
PA_R0  
PA_0N  
C4  
GND  
Figure 12: Typical Application Circuit  
10  
PRELIMINARY DATASHEET - Rev 1.3  
02/2012  
AWT6635  
PACKAGEꢀOUTLINE  
Figure 13: Package Outline - 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module  
Part Number  
6635  
LLLLNN  
YYWWCC  
Pin 1 Identifier  
Lot Number  
Date Code  
Country Code (CC)  
YY= Year WW= Work Week  
Figureꢀ14:ꢀBrandingꢀSpecificationꢀPackage  
11  
PRELIMINARY DATASHEET - Rev 1.3  
02/2012  
AWT6635  
PCB AND STENCIL DESIGN GUIDELINE  
Figure 15: Recommended PCB Layout Information  
12  
PRELIMINARY DATASHEET - Rev 1.3  
02/2012  
AWT6635  
COMPONENTꢀPACKAGING  
Pin 1  
Figure 16: Carrier Tape  
Figure 17: Reel  
13  
PRELIMINARY DATASHEET - Rev 1.3  
02/2012  
AWT6635  
ORDERING INFORMATION  
TEMPERATURE  
PACKAGE  
DESCRIPTION  
ORDER NUMBER  
COMPONENTꢀPACKAGING  
RANGE  
RoHSꢀCompliantꢀ10ꢀPin  
3ꢀmmꢀxꢀ3ꢀmmꢀxꢀ1ꢀmm TapeꢀandꢀReel,ꢀ2500ꢀpiecesꢀperꢀReel  
AWT6635Q7  
-30ꢀoCꢀtoꢀ+90ꢀoC  
Surface Mount Module  
RoHSꢀCompliantꢀ10ꢀPin  
3ꢀmmꢀxꢀ3ꢀmmꢀxꢀ1ꢀmm PartialꢀTapeꢀandꢀReel  
Surface Mount Module  
AWT6635P9  
-30ꢀoCꢀtoꢀ+90ꢀoC  
anaDigiCS, iꢀc.  
141 Mount Bethel Road  
Warren, New Jersey 07059, U.S.A.  
Tel: +1 (908) 668-5000  
Fax: +1 (908) 668-5132  
URL: http://www.anadigics.com  
iMPOrTanT nOTiCE  
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.  
The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to  
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed  
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers  
to verify that the information they are using is current before placing orders.  
warning  
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of anANADIGICS product  
in any such application without written consent is prohibited.  
14  
PRELIMINARY DATASHEET - Rev 1.3  
02/2012  

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