AWT6632P9 [ANADIGICS]
HELP3DC UMTS1900 (Band 2) LTE/WCDMA/CDMA Linear PA Module; HELP3DC UMTS1900 （频段2 ） LTE / WCDMA / CDMA线性功率放大器模块
| 型号： | AWT6632P9 |
| 厂家： | 
ANADIGICS, INC |
| 描述： | HELP3DC UMTS1900 (Band 2) LTE/WCDMA/CDMA Linear PA Module |
| 文件： | 总14页 (文件大小：861K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AWT6632
HELP3DCTM UMTS1900 (Band 2)
LTE/WCDMA/CDMA Linear PA Module
DATA SHEET - Rev 2.1
FEATURES
•
CDMA/EVDO, WCDMA/HSPA, LTE Compliant
3rd Generation HELPTM technology
•
•ꢀ HighꢀEfficiency:ꢀ(R99ꢀwaveform)
ꢀ
•ꢀꢀ40ꢀ%ꢀ@ꢀPOUT = +29 dBm
A
W
T6632
ꢀ
•ꢀꢀ22ꢀ%ꢀ@ꢀPOUT = +16.75 dBm
SimplerꢀCalibrationꢀwithꢀonlyꢀ2ꢀBiasꢀModes
Optimized for SMPS Supply
•
•
•ꢀ LowꢀQuiescentꢀCurrent:ꢀ8ꢀmA
•ꢀ LowꢀLeakageꢀCurrentꢀinꢀShutdownꢀMode:ꢀ<5ꢀµA
•ꢀ InternalꢀVoltageꢀRegulatorꢀ
•
Integratedꢀ“daisyꢀchainable”ꢀdirectionalꢀcouplersꢀ
withꢀCPLIN and CPLOUTꢀPorts
10 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
•
Optimized for a 50 ΩꢀSystemꢀ
•ꢀ LowꢀProfileꢀMiniatureꢀSurfaceꢀMountꢀPackage
•ꢀ InternalꢀDCꢀblocksꢀonꢀIN/OUTꢀRFꢀports
•ꢀ 1.8ꢀVꢀControlꢀLogic
ruggedness.ꢀThereꢀareꢀtwoꢀselectableꢀbiasꢀmodesꢀ
thatꢀ optimizeꢀ efficiencyꢀ forꢀ differentꢀ outputꢀ powerꢀ
levels,ꢀandꢀaꢀshutdownꢀmodeꢀwithꢀlowꢀleakageꢀcurrent,ꢀ
whichꢀincreasesꢀhandsetꢀtalkꢀandꢀstandbyꢀtime.ꢀTheꢀ
self-containedꢀꢀ3ꢀmmꢀxꢀ3ꢀmmꢀxꢀ1ꢀmmꢀsurfaceꢀmountꢀ
packageꢀincorporatesꢀmatchingꢀnetworksꢀoptimizedꢀforꢀ
outputꢀpower,ꢀefficiency,ꢀandꢀlinearityꢀinꢀaꢀ50ꢀΩꢀsystem.
•ꢀ RoHSꢀCompliantꢀPackage,ꢀ260ꢀoC MSL-3
APPLICATIONS
•ꢀ WirelessꢀHandsetsꢀandꢀDataꢀDevicesꢀfor:
• WCDMA/HSPA/LTE PCS Band 2
•ꢀꢀCDMA/EVDOꢀBandclassꢀ1ꢀ&ꢀ14
•ꢀꢀBandꢀ25ꢀLTEꢀDevices
GND at Slug (pad)
1
2
3
4
5
10
9
V
BATT
VCC
PRODUCT DESCRIPTION
TheꢀAWT6632ꢀPAꢀisꢀdesignedꢀtoꢀprovideꢀhighlyꢀlinearꢀ
outputꢀforꢀWCDMA,ꢀCDMAꢀandꢀLTEꢀhandsetsꢀandꢀ
dataꢀdevicesꢀwithꢀhighꢀefficiencyꢀatꢀbothꢀhighꢀandꢀ
lowꢀ powerꢀ modes.ꢀ ꢀThisꢀ HELP3DCTM PA can be
usedꢀ withꢀ anꢀ externalꢀ switchꢀ modeꢀ powerꢀ supplyꢀ
(SMPS)ꢀtoꢀimproveꢀitsꢀefficiencyꢀandꢀreduceꢀcurrentꢀ
consumptionꢀ furtherꢀ atꢀ mediumꢀ andꢀ lowꢀ outputꢀ
powers.ꢀꢀAꢀ“daisyꢀchainable”ꢀ directionalꢀ couplerꢀisꢀ
integratedꢀinꢀtheꢀmoduleꢀthusꢀeliminatingꢀtheꢀneedꢀ
ofꢀexternalꢀcouplers.ꢀTheꢀdeviceꢀisꢀmanufacturedꢀonꢀ
anꢀadvancedꢀInGaPꢀHBTꢀMMICꢀtechnologyꢀofferingꢀ
state-of-the-artꢀreliability,ꢀtemperatureꢀstability,ꢀandꢀ
CPL
RFIN
RFOUT
CPLIN
GND
Bias Control
8
V
MODE2 (N/C)
Voltage Regulation
7
V
MODE1
6
VEN
CPLOUT
Figure 1: Block Diagram
02/2012
AWT6632
1
2
10
9
V
BATT
V
CC
RFIN
RFOUT
3
8
VMODE2 (N/C)
CPLIN
4
5
7
6
V
MODE1
GND
VEN
CPLOUT
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
PIN
1
NAME
DESCRIPTION
Battery Voltage
RFꢀInput
V
BATT
2
RFIN
3
VMODE2 (N/C) No Connection
4
V
MODE1
Mode Control Voltage 1
PA Enable Voltage
Coupler Output
Ground
5
V
EN
6
CPLOUT
GND
7
8
CPLIN
RFOUT
Coupler Input
9
RFꢀOutput
10
V
CC
Supply Voltage
DATA SHEET - Rev 2.1
2
02/2012
AWT6632
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN
0
MAX
+5
UNIT
V
Supply Voltage (VCC
)
Battery Voltage (VBATT
)
0
+6
V
ControlꢀVoltagesꢀ(VMODE1, VENABLE
)
0
+3.5
+10
+150
V
RFꢀInputꢀPowerꢀ(PIN
)
-
dBm
°C
Storage Temperature (TSTG
)
-40
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure
to absolute ratings for extended periods of time may adversely affect
reliability.
Table 3: Operating Ranges
PARAMETER
OperatingꢀFrequencyꢀ(f)
Supply Voltage (VCC)
Battery Voltage (VBATT)
MIN
1850
+0.5
+3.1
TYP
MAX UNITS
COMMENTS
-
1915
MHz
V
+3.4 +4.35
+3.4 +4.35
POUT < +29.0 dBm
V
POUT < +29.0 dBm
+1.35
0
+1.8
0
+3.1
+0.5
PAꢀ“on”
PAꢀ“shutꢀdown”
Enable Voltage (VENABLE)
V
V
+1.35
0
+1.8
0
+3.1
+0.5
LowꢀBiasꢀMode
HighꢀBiasꢀMode
Mode Control Voltage (VMODE1)
RFꢀOutputꢀPowerꢀ(POUT)
ꢀꢀR99ꢀWCDMA,ꢀHPM
ꢀꢀHSPAꢀ(MPRꢀ=ꢀ0),ꢀHPM
LTE, HPM
ꢀꢀR99ꢀWCDMA,ꢀLPM
ꢀꢀHSPAꢀ(MPRꢀ=ꢀ0),ꢀLPM
LTE, LPM
28.2ꢀ(1)
27.2 (1)
27.2 (1)
29.0
28.0
28.0
29.0
28.0
28.0
3GPPꢀTSꢀ34.121-1,ꢀRelꢀ8
Table C.11.1.3, for WCDMA
Subtestꢀ1
dBm
15.95 (1) 16.75 16.75
14.95ꢀ(1) 15.75 15.75
14.95ꢀ(1) 15.75 15.75
TSꢀ36.101ꢀRelꢀ8ꢀforꢀLTE
CDMAꢀOutputꢀPower
HPM
LPM
27.4ꢀ(1)
14.95ꢀ(1) 15.75
28.2
-
-
dBm
°C
CDMA2000,ꢀRC-1
CaseꢀTemperatureꢀ(TC)
-30
-
+90
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
Notes:
(1) For operation at Vcc = +3.1 V, Pout is derated by 0.8 dB.
DATA SHEET - Rev 2.1
3
02/2012
AWT6632
Table 4: Electrical Specifications - WCDMA Operation (R99 waveform)
(TC
= +25 °C, VCC = VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system)
COMMENTS
PARAMETER
MIN
TYP
MAX
UNIT
P
OUT
V
MODE1
25
12
27
14
29
16
+29.0 dBm
0 V
Gain
dB
dBc
dBc
%
+16.75 dBm
1.8 V
-
-
-42
-40
-39
-37
+29.0 dBm
+16.75 dBm
0 V
1.8 V
ACLR1 at 5 MHz offset (1)
ACLR2 at 10 MHz offset
Power-Added Efficiency (1)
-
-
-55
-55
-48
-48
+29.0 dBm
+16.75 dBm
0 V
1.8 V
36
20
40
23
-
-
+29.0 dBm
+16.75 dBm
0 V
1.8 V
Quiescent Current (Icq)
Low Bias Mode
-
-
10
15
mA
mA
VMODE1 = +1.8 V
Mode Control Current
0.2
0.4
through VMODE pin, VMODE1 = +1.8 V
Enable Current
BATT Current
-
-
0.3
2.5
0.5
5
mA
mA
through VENABLE pin
through VBATT pin, VMODE1 = +1.8 V
V
V
BATT = +4.2 V, VCC = +4.2 V,
ENABLE = 0 V, VMODE1 = 0 V
Leakage Current
-
3
4
µA
-
-
-134
-140
-
-
dBm/Hz
dBm/Hz
P
P
OUT < +29.0 dBm, VMODE1 = 0V
Noise in Receive Band(2)
OUT < 16.75 dBm, VMODE1 = +1.8 V
Harmonics
2fo
3fo, 4fo
-
-
-39
-60
-35
-50
P
OUT < +29.0 dBm
dBc
Input Impedance
Coupling Factor
Directivity
-
-
-
2:1
20
22
-
-
-
VSWR
dB
dB
698 MHz to 2620 MHz
Pin 6 to 8
Shutdown Mode
Coupler In - Out
Daisy Chain Insertion Loss
-
0.25
-
dB
P
OUT < +29.0 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating
conditions
Spurious Output Level
(all spurious outputs)
-
-
-70
dBc
Load mismatch stress with no
permanent degradation or failure
8:1
-
-
-
-
VSWR Applies over full operating range
Deg
Phase Delta (HPM-LPM)
10
Notes:
(1) ACLR and Efficiency measured at 1880 MHz.
(2) Noise measured at 1930 MHz to 1990 MHz.
DATA SHEET - Rev 2.1
4
02/2012
AWT6632
Table 5: Electrical Specifications - LTE Operation (RB = 12, START = 0, QPSK)
(T
C
= +25 °C, VBATT = VCC = +3.4 V, VENABLE = +1.8 V, 50 Ω system)
COMMENTS
PARAMETER
MIN
TYP
MAX
UNIT
P
OUT
V
MODE1
24
12
26.5
14
29
16
+28.0 dBm
0 V
Gain
dB
dBc
dBc
dBc
%
+15.75 dBm
1.8 V
ACLR E-UTRA
at
-
-
-39
-38
-36
-35
+28.0 dBm
+15.75 dBm
0 V
1.8 V
10 MHz offset
ACLR1 UTRA (1)
at
-
-
-40
-39
-37
-36
+28.0 dBm
+15.75 dBm
0 V
1.8 V
7.5 MHz offset
ACLR2 UTRA
at
-
-
-62
-62
-58
-58
+28.0 dBm
+15.75 dBm
0 V
1.8 V
12.5 MHz offset
33
17
36
20
-
-
+28.0 dBm
+15.75 dBm
0 V
1.8 V
Power-Added Efficiency (1)
P
OUT ≤ +28.0 dBm
Spurious Output Level
(all spurious outputs)
In-band load VSWR < 5:1
-
-
-
<-70
-
dBc
Out-of-band load VSWR < 10:1
Applies over all operating conditions
Load mismatch stress with no
permanent degradation or failure
8:1
VSWR Applies over full operating range
Notes:
(1) ACLR and Efficiency measured at 1880 MHz.
DATA SHEET - Rev 2.1
5
02/2012
AWT6632
Table 6: Electrical Specifications - CDMA Operation (CDMA 2000, RC-1)
(T
C
= +25 °C, VCC = VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system)
COMMENTS
PARAMETER
MIN
TYP
MAX
UNIT
P
OUT
V
MODE1
24
12
26
14
28
16
+28.2 dBm
+15.75 dBm
0 V
1.8 V
Gain
dB
Adjacent Channel Power
at +1.25 MHz offset(1)
-
-
-50
-50
-46
-46
+28.2 dBm
+15.75 dBm
0 V
1.8 V
dBc
Primary Channel BW = 1.23 MHz
Adjacent Channel BW = 30 kHz
Adjacent Channel Power
at + 1.98 MHz offset (1)
-
-
-55
-60
-51
-56
+28.2 dBm
0 V
dBc
%
Primary Channel = 1.23 MHz
Adjacent Channel = 30 kHz
+15.75 dBm
1.8 V
-
-
37
20
-
-
+28.2 dBm
+15.75 dBm
0 V
1.8 V
Power-Added Efficiency (1)
P
OUT < +28.2 dBm
Spurious Output Level
(all spurious outputs)
In-band load VSWR < 5:1
-
-
-
<-70
-
dBc
Out-of-band load VSWR < 10:1
Applies over all operating ranges
Load mismatch stress with no
permanent degradation or failure
8:1
VSWR Applies over full operating range
Notes:
(1) ACPR and Efficiency measured at 1880 MHz.
DATA SHEET - Rev 2.1
6
02/2012
AWT6632
APPLICATION INFORMATION
Toꢀ ensureꢀproperꢀperformance,ꢀ referꢀ toꢀ allꢀ relatedꢀ logicꢀlevelꢀ(seeꢀOperatingꢀRangesꢀtable)ꢀtoꢀVMODE1
.
Applicationꢀ Notesꢀ onꢀ theꢀANADIGICSꢀ webꢀ site:ꢀ TheꢀBiasꢀControlꢀtableꢀlistsꢀtheꢀrecommendedꢀmodesꢀ
http://www.anadigics.com
ofꢀoperationꢀforꢀvariousꢀapplications.ꢀVMODE2ꢀisꢀnotꢀ
necessaryꢀforꢀthisꢀPA.
Shutdown Mode
Theꢀpowerꢀamplifierꢀmayꢀbeꢀplacedꢀinꢀaꢀshutdownꢀ Twoꢀoperatingꢀmodesꢀareꢀavailableꢀtoꢀoptimizeꢀcurrentꢀ
modeꢀ byꢀ applyingꢀ logicꢀ lowꢀ levelsꢀ (seeꢀ Operatingꢀ consumption.ꢀHighꢀBias/HighꢀPowerꢀoperatingꢀmodeꢀ
Rangesꢀtable)ꢀtoꢀtheꢀVENABLE and VMODE1ꢀvoltages.
isꢀforꢀPOUTꢀlevelsꢀ> 15.75 dBm. At around 16.75 dBm
outputꢀ power,ꢀ theꢀ PAꢀ shouldꢀ beꢀ “Modeꢀ Switched”ꢀ
toꢀ ꢀ Lowꢀ powerꢀ modeꢀ forꢀ lowestꢀ quiescentꢀ currentꢀ
consumption.
Bias Modes
TheꢀpowerꢀamplifierꢀmayꢀbeꢀplacedꢀinꢀeitherꢀaꢀLowꢀBiasꢀ
modeꢀorꢀaꢀHighꢀBiasꢀmodeꢀbyꢀapplyingꢀtheꢀappropriateꢀ
Vcontrols
Venable/Vmode(s)
Rise/Fall Max 1µS
Defined at 10% to 90%
of Min/Max Voltage
On Sequence Start
T_0N=0µ
Off Sequence Start
T_0FF=0µ
ON Sequence
OFF Sequence
RFIN
notes 1,2
V
EN
VCC
note 1
T_0N+1µS
T_0N+3µS
T_0FF+2µS T_0FF+3µS
Referenced After 90%of Rise
Time
Referenced Before10%of Fall
Time
Figure 3: Recommended ON/OFF Timing Sequence
Notes:
(1) Level might be changed after RF is ON.
(2) RF OFF defined as PIN ≤ -30 dBm.
(3) Switching simultaneously between VMODE and VEN is not recommended.
Table 7: Bias Control
P
OUT
BIAS
MODE
Application
V
ENABLE
V
MODE1
V
CC
V
BATT
LEVELS
Highꢀpower
(HighꢀBiasꢀMode)
>+15.75 dBm
High
Low
+1.8ꢀV
+1.8ꢀV
0 V
0 V
1.5ꢀ-ꢀ4.35ꢀV
0.5ꢀ-ꢀ4.35ꢀV
0.5ꢀ-ꢀ4.35ꢀV
> 3.1 V
> 3.1 V
> 3.1 V
Med/lowꢀpower
(LowꢀBiasꢀMode)
+16.75 dBm
+1.8ꢀV
Shutdown
-
Shutdown
0 V
DATA SHEET - Rev 2.1
7
02/2012
AWT6632
VBATT
VCC
C2
0.1µF
C1
C3
C5
2.2 µF
GND at slug
33pF
2.2µFceramic
1
2
10
9
V
BATT
V
CC
RFIN
RFIN
RFOUT
RFOUT
3
4
5
8
7
6
CPLIN
GND
V
V
V
MODE2 (N/C)
CPLIN
V
MODE1
MODE1
CPLOUT
V
EN
CPLOUT
EN
Figure 4: Evaluation Circuit Schematic
RFOUT
C3
C6
C1
C2
RFIN
C4
CPLIN
Figure 5: Evaluation Board Layout
DATA SHEET - Rev 2.1
8
02/2012
AWT6632
HELP3DCTM
TheꢀAWT6632ꢀpowerꢀamplifierꢀmoduleꢀisꢀbasedꢀonꢀ whichꢀ eliminatesꢀ theꢀ needꢀ forꢀ anꢀ externalꢀ constantꢀ
ANADIGICS proprietary HELP3DC™ technology. voltageꢀ source.ꢀ Theꢀ PAꢀ isꢀ turnꢀ on/offꢀ isꢀ controlledꢀ
TheꢀPAꢀisꢀdesignedꢀtoꢀoperateꢀupꢀtoꢀ17ꢀdBmꢀinꢀtheꢀlowꢀ by VENꢀpin.ꢀAꢀsingleꢀVMODE control logic (VMODE1)ꢀisꢀ
powerꢀmode,ꢀthusꢀeliminatingꢀtheꢀneedꢀforꢀthreeꢀgainꢀ neededꢀ toꢀ operateꢀ thisꢀ device.ꢀ ꢀAWT6632ꢀ requiresꢀ
states,ꢀ whileꢀ stillꢀ maintainingꢀ lowꢀ quiescentꢀ currentꢀ onlyꢀ twoꢀ calibrationꢀ sweepsꢀ forꢀ systemꢀ calibration,ꢀ
andꢀhighꢀefficiencyꢀinꢀlowꢀandꢀmediumꢀpowerꢀlevels.ꢀ thusꢀsavingꢀcalibrationꢀtime.ꢀ
Averageꢀ weightedꢀ efficiencyꢀ canꢀ beꢀ increasedꢀ byꢀ
usingꢀanꢀexternalꢀswitchꢀmodeꢀpowerꢀsupplyꢀ(SMPS)ꢀ Figureꢀ5ꢀshowsꢀoneꢀapplicationꢀexampleꢀonꢀmobileꢀ
orꢀDC/DCꢀconverterꢀtoꢀreduceꢀVCC.
board.ꢀC1ꢀandꢀC2ꢀareꢀRFꢀbypassꢀcapsꢀandꢀshouldꢀ
beꢀ placedꢀ nearbyꢀ pinꢀ 1ꢀ andꢀ pinꢀ 10.ꢀ Bypassꢀ capsꢀ
Theꢀdirectionalꢀ“daisyꢀchainable”ꢀcouplerꢀisꢀintegratedꢀ C4ꢀandꢀC5ꢀmayꢀnotꢀbeꢀneeded.ꢀAlsoꢀaꢀ“T”ꢀmatchingꢀ
withinꢀtheꢀPAꢀmodule,ꢀthereforeꢀthereꢀisꢀnoꢀneedꢀforꢀ topologyꢀ isꢀ recommendedꢀ atꢀ PAꢀ RFINꢀ andꢀ RFOUT
externalꢀcouplers.
portsꢀtoꢀprovideꢀmatchingꢀbetweenꢀinputꢀTXꢀFilterꢀandꢀ
Duplexerꢀ/ꢀIsolator.
TheꢀAWT6632ꢀ hasꢀ anꢀ integratedꢀ voltageꢀ regulator,ꢀ
SMPS
VBATT
C6
C1
C2
C3
GND
at slug
GND
GND
GND
GND
RFOUT
VCC
RFOUT
VBATT
RFIN
RFIN
TX filter
Duplexer
Output
Matching
Input
Matching
VMODE2
CPLIN
50Ω
VMODE1
VEN
GND
CPLOUT
C5
GND
GND
BB
To
Detector
PA_R0
PA_0N
C4
GND
Figure 6: Typical Application Circuit
DATA SHEET - Rev 2.1
9
02/2012
AWT6632
PERFORMANCE DATA:
Figure 8: WCDMA Gain (dB) over Voltage
Figure 7: WCDMA Gain (dB) over Temperature
(VBATT = VCC = 3.4 V)
(TC = 25 8C)
30
30
-30Cꢀ3.4Vcc
25C 3.2Vcc
25Cꢀ3.4Vcc
25Cꢀ4.2Vcc
25C 3.0Vcc
25Cꢀ3.4Vccꢀ
25
90Cꢀ3.4Vccꢀ
25
20
15
10
20
15
10
5
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Pout(dBm)
Pout(dBm)
Figure 9: WCDMA PAE (%) over Temperature
Figure 10: WCDMA PAE (%) over Voltage
(VBATT = VCC = 3.4 V)
(TC = 25 8C)
50
50
45
40
35
30
25
20
15
10
5
-30ꢀ3.4cc
25C 3.2Vcc
25Cꢀ3.4Vcc
25Cꢀ4.2Vcc
25C 3.0Vcc
45
25Cꢀ3.4Vcc
40
90Cꢀ3.4Vcc
35
30
25
20
15
10
5
0
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Pout(dBm)
Pout(dBm)
Figure 11: WCDMA ACLR1 (dBc) over Temperature
(VBATT = VCC = 3.4 V)
Figure 12: WCDMA ACLR1 (dBc) over Temperature
(TC = 25 8C)
-25
-25
-30Cꢀ3.4Vcc
25Cꢀ3.4Vcc
25C 3.2Vcc
-30
-30
90Cꢀ3.4Vccꢀ
25Cꢀ3.4Vcc
25Cꢀ4.2Vccꢀ
-35
-35
25C 3.0Vcc
-40
-45
-50
-55
-40
-45
-50
-55
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Pout(dBm)
Pout(dBm)
DATA SHEET - Rev 2.1
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AWT6632
PACKAGE OUTLINE
Figure 13: Package Outline - 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module
Part Number
6632
LLLLNN
YYWWCC
Pin 1 Identifier
Lot Number
Date Code
YY=Year; WW=Work week
Country Code (CC)
Figure 14: Branding Specification Package
DATA SHEET - Rev 2.1
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AWT6632
PCB AND STENCIL DESIGN GUIDELINE
Figure 15: Recommended PCB Layout Information
DATA SHEET - Rev 2.1
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AWT6632
COMPONENT PACKAGING
Pin 1
Figure 16: Carrier Tape
Figure 17: Reel
DATA SHEET - Rev 2.1
13
02/2012
AWT6632
ORDERING INFORMATION
TEMPERATURE
PACKAGE
DESCRIPTION
ORDER NUMBER
COMPONENT PACKAGING
RANGE
RoHSꢀCompliantꢀ10ꢀPin
3ꢀmmꢀxꢀ3ꢀmmꢀxꢀ1ꢀmm TapeꢀandꢀReel,ꢀ2500ꢀpiecesꢀperꢀReel
AWT6632Q7
-30 oC to +90 oC
Surface Mount Module
RoHSꢀCompliantꢀ10ꢀPin
3ꢀmmꢀxꢀ3ꢀmmꢀxꢀ1ꢀmm PartialꢀTapeꢀandꢀReel
Surface Mount Module
AWT6632P9
-30 oC to +90 oC
anaDigiCS, iꢀc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
iMPOrTanT nOTiCE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
warning
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of anANADIGICS product
in any such application without written consent is prohibited.
DATA SHEET - Rev 2.1
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02/2012
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