AOD4184_09 [AOS]
40V N-Channel MOSFET; 40V N沟道MOSFET
| 型号： | AOD4184_09 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 40V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：292K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD4184/AOI4184
40V N-Channel MOSFET
General Description
Product Summary
VDS
The AOD4184/AOI4184 used advanced trench technology
and design to provide excellent RDS(ON) with low gate
charge. With the excellent thermal resistance of the DPAK
package, those devices are well suited for high current
load applications.
40V
50A
ID (at VGS=10V)
< 8mΩ
RDS(ON) (at VGS=10V)
< 11mΩ
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
TO252
DPAK
TO-251A
IPAK
D
TopView
Bottom View
Top View
Bottom View
D
D
D
G
S
G
S
G
S
D
D
S
G
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
40
Units
Drain-Source Voltage
V
VGS
ID
IDM
IDSM
±20
Gate-Source Voltage
V
A
TC=25°C
50
40
Continuous Drain
Current
Pulsed Drain Current C
TC=100°C
120
6.5
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
A
5
IAS, IAR
35
A
EAS, EAR
61
mJ
TC=25°C
50
PD
W
Power Dissipation B
Power Dissipation A
TC=100°C
TA=25°C
TA=70°C
25
2.3
PDSM
W
1.5
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
Max
22
55
3
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
18
44
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Steady-State
Steady-State
RθJC
2.4
Rev0 : April 2009
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Page 1 of 6
AOD4184/AOI4184
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
40
V
VDS=40V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
100
2.6
nA
V
VGS(th)
ID(ON)
1.7
2.2
120
A
V
GS=10V, ID=20A
6.7
11
8
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
13
11
VGS=4.5V, ID=15A
VDS=5V, ID=20A
IS=1A,VGS=0V
8.5
37
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
0.72
1
Maximum Body-Diode Continuous Current
20
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
120
150
80
1500 1800
pF
pF
pF
Ω
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
215
135
3.5
280
190
5
2
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
21
10
27.2
13.6
4.5
33
16
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
V
GS=10V, VDS=20V, ID=20A
6.4
6.4
VGS=10V, VDS=20V, RL=1Ω,
17.2
29.6
16.8
ns
R
GEN=3Ω
tD(off)
tf
ns
ns
trr
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
20
18
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
29
26
38
34
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Aug 2009
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Page 2 of 6
AOD4184/AOI4184
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
100
80
60
40
20
0
10V
5V
VDS=5V
4V
3.5V
125°C
25°C
VGS=3V
2
2.5
3
3.5
4
4.5
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
10
9
2.2
2
VGS=4.5V
VGS=10V
ID=20A
1.8
1.6
1.4
1.2
1
8
7
VGS=4.5V
VGS=10V
6
ID=15A
0.8
0.6
5
-50 -25
0
25 50
75 100 125 150 175
0
5
10
15
20
25
30
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
25
1.0E+02
ID=20A
1.0E+01
20
15
10
5
125°C
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
125°C
25°C
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS (Volts)
VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics
(Note E)
Rev 0 : Aug 2009
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Page 3 of 6
AOD4184/AOI4184
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2500
2000
1500
1000
500
VDS=20V
ID=20A
8
Ciss
6
4
Coss
Crss
2
0
0
0
5
10
15
Qg (nC)
20
25
30
0
10
20
VDS (Volts)
30
40
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
800
600
400
200
0
1000.0
100.0
10.0
1.0
TJ(Max)=175°C
TC=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
DC
0.1
TJ(Max)=175°C
TC=25°C
0.0
0.01
0.1
1
10
100
1E-05 0.0001 0.001 0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TC+PDM.ZθJC.RθJ
RθJC=3°C/W
T
0.1
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0 : Aug 2009
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Page 4 of 6
AOD4184/AOI4184
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
60
50
40
30
20
10
0
TA=25°C
TA=100°C
TA=125°C
TA=150°C
0.00001
10
0
25
50
75
100
125
150
175
0.000001
0.0001
0.001
Time in avalanche, tA (s)
TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
1000
100
10
60
50
40
30
20
10
0
TA=25°C
1
0.001
0.1
10
1000
0
25
50
75
100
125
150
175
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
0.1
0.01
PD
Ton
Single Pulse
0.01
T
0.001
0.00001
0.0001
0.001
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0 : Aug 2009
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Page 5 of 6
AOD4184/AOI4184
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 0 : Aug 2009
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Page 6 of 6
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