AOD4185_12 [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AOD4185_12 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：275K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD4185/AOI4185
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD4185/AOI4185 uses advanced trench
technology to provide excellent RDS(ON) and low gate
charge. With the excellent thermal resistance of the
DPAK/IPAK package, this device is well suited for high
current applications.
VDS (V) = -40V
ID = -40A
RDS(ON) < 15mΩ (VGS = -10V)
RDS(ON) < 20mΩ (VGS = -4.5V)
(VGS = -10V)
100% UIS Tested!
100% Rg Tested!
-RoHS Compliant
-Halogen Free*
TO252
DPAK
TO-251A
IPAK
D
Bottom View
Top View
Top View
Bottom View
D
D
D
D
G
S
G
S
G
S
S
G
D
D
G
S
Absolute Maximum Ratings TC=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-40
V
Gate-Source Voltage
Continuous Drain
Current B,H
Pulsed Drain Current C
Avalanche Current C
VGS
±20
-40
V
TC=25°C
TC=100°C
ID
-31
A
IDM
IAR
EAR
-115
-42
Repetitive avalanche energy L=0.1mH C
88
mJ
W
°C
TC=25°C
62.5
31
PD
Power Dissipation B
TC=100°C
TA=25°C
2.5
PDSM
Power Dissipation A
1.6
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
15
41
2
Max
20
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A,G
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A,G
Maximum Junction-to-Case D,F
Steady-State
Steady-State
50
2.4
RθJC
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4185/AOI4185
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-40
V
VDS=-40V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-20A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-3
nA
V
VGS(th)
ID(ON)
-1.7
-1.9
-115
A
12.5
19
15
23
20
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
mΩ
VGS=-4.5V, ID=-15A
VDS=-5V, ID=-20A
IS=-1A,VGS=0V
16
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
50
S
V
A
-0.72
-1
Maximum Body-Diode Continuous Current
-20
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2550
280
190
4
pF
pF
pF
Ω
VGS=0V, VDS=-20V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
2.5
6
SWITCHING PARAMETERS
Qg (-10V) Total Gate Charge
Qg (-4.5V) Total Gate Charge
42
18.6
7
55
nC
VGS=-10V, VDS=-20V,
ID=-20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
nC
nC
ns
ns
ns
ns
8.6
9.4
20
V
GS=-10V, VDS=-20V, RL=1Ω,
RGEN=3Ω
tD(off)
tf
55
30
trr
IF=-20A, dI/dt=100A/µs
IF=-20A, dI/dt=100A/µs
38
49
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
47
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are
based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev4: April, 2012
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4185/AOI4185
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
100
VDS=-5V
-6.0V
-10V
-4.5V
-4.0V
80
60
40
20
0
`
125°C
VGS=-3.5V
25°
0
1
2
3
4
5
1.5
2
2.5
3
3.5
4
4.5
5
-VDS (Volts)
-VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
24
2
1.8
1.6
1.4
1.2
1
22
20
18
16
14
12
10
VGS=-10V
ID=-20A
VGS=-4.5V
VGS=-10V
VGS=-4.5V
ID=-15A
0.8
0.6
0
10
20
30
40
50
60
-50 -25
0
25 50 75 100 125 150 175 200
-ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
45
40
35
30
25
20
15
10
ID=-20A
10
1
0.1
125°C
125°C
25°C
0.01
25°C
0.001
0.0001
0.00001
3
4
5
6
7
8
9
10
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
1.2
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4185/AOI4185
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3500
10
8
VDS=-20V
ID=-20A
3000
2500
2000
1500
1000
500
Ciss
6
4
Crss
2
Coss
0
0
0
5
10
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
20
25
30
35
40
0
5
10
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
25
30
35
40
45
10000
1000
100
1000
100
10
TJ(Max)=175°
C
10µs
RDS(ON)
limited
100µs
1ms
10ms
1
DC
TJ(Max)=175°C
TC=25°C
0.1
10
0.1
1
10
100
0.00001 0.0001
0.001
0.01
0.1
1
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=2.4°C/W
1
0.1
PD
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.01
0.1
1
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4185/AOI4185
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
60
50
40
30
20
10
0
50
40
30
20
10
0
0
25
50
75
TCASE (°C)
Figure 12: Power De-rating (Note B)
100
125
150
175
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Current De-rating (Note B)
10000
TJ(Max)=150°
C
1000
100
10
1
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
θJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
0.1
1
10
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4185/AOI4185
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
BVDSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
trr
Vds -
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Ig
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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