AO3701 [AOS]
P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode; P沟道增强型场效应晶体管，肖特基二极管
| 型号： | AO3701 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| 文件： | 总5页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO3701
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
Features
VDS (V) = -20V
The AO3701 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications. It is
ESD protected. Standard Product AO3701 is Pb-free (meets
ROHS & Sony 259 specifications). AO3701L is a Green
Product ordering option. AO3701 and AO3701L are
electrically identical.
ID = -3A (VGS = -10V)
RDS(ON) < 80mΩ (VGS = -10V)
RDS(ON) < 100mΩ (VGS = -4.5V)
RDS(ON) < 145mΩ (VGS = -2.5V)
ESD Rating: 2000V HBM
SCHOTTKY
VDS (V) = 20V, IF = 1A, VF<0.5V@0.5A
D
K
SOT-23-5
Top View
D
K
G
S
A
1
2
3
5
4
G
A
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
MOSFET
Schottky
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
-20
V
V
VGS
±12
-3
TA=25°C
TA=70°C
ID
A
Continuous Drain Current
A
-2.3
-10
B
IDM
Pulsed Drain Current
VKA
Schottky reverse voltage
20
2
V
A
TA=25°C
TA=70°C
IF
IFM
A
Continuous Forward Current
1
B
Pulsed Forward Current
10
TA=25°C
TA=70°C
1.14
0.72
0.92
0.59
PD
W
°C
Power Dissipation
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Parameter: Thermal Characteristics MOSFET
Symbol
Typ
Max
Units
A
t ≤ 10s
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
80.3
110
RθJA
A
Steady-State
Steady-State
°C/W
°C/W
117
43
150
80
C
RθJL
Maximum Junction-to-Lead
Thermal Characteristics Schottky
A
t ≤ 10s
Maximum Junction-to-Ambient
109.4
135
RθJA
RθJL
A
Steady-State
Steady-State
Maximum Junction-to-Ambient
136.5
58.5
175
80
C
Maximum Junction-to-Lead
Alpha & Omega Semiconductor, Ltd.
AO3701
Electrical Characteristics (T =25°C unless otherwise noted)
J
Parameter
Conditions
Symbol
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-20
V
VDS=-16V, VGS=0V
-0.5
-5
IDSS
Zero Gate Voltage Drain Current
µΑ
TJ=55°C
µA
µA
VDS=0V, VGS=±10V
VDS=0V, VGS=±12V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
±1
IGSS
Gate-Body leakage current
±10
-1.4
VGS(th)
ID(ON)
Gate Threshold Voltage
On state drain current
-0.6
-10
-0.9
V
A
V
GS=-10V, ID=-3A
65
91
80
mΩ
TJ=125°C
110
100
145
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
VGS=-4.5V, ID=-2A
VGS=-2.5V, ID=-1A
VDS=-5V, ID=-3A
IS=-1A,VGS=0V
82
117
6.8
-0.8
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
-0.65
-0.95
-2
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
512
77
620
pF
pF
pF
Ω
V
GS=0V, VDS=-10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
62
VGS=0V, VDS=0V, f=1MHz
9.2
13
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
5.5
0.8
1.9
5
6.6
nC
nC
nC
ns
ns
ns
ns
VGS=-4.5V, VDS=-10V, ID=-3A
VGS=-10V, VDS=-10V, RL=2.8Ω,
6.7
28
R
GEN=3Ω
tD(off)
tf
13.5
9.8
2.7
trr
IF=-3A, dI/dt=100A/µs
IF=-3A, dI/dt=100A/µs
12
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
IF=0.5A
0.39
0.45
0.1
V
VR=16V
Irm
Maximum reverse leakage current
mA
VR=16V, TJ=125°C
20
CT
trr
Junction Capacitance
VR=10V
34
5.2
0.8
pF
IF=1A, dI/dt=100A/µs
IF=1A, dI/dt=100A/µs
10
Schottky Reverse Recovery Time
Schottky Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev1: May 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO3701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
25
20
15
10
5
-10.0V
VDS=-5V
-5.0V
8
6
4
2
0
-6.0V
-4.0V
-3.0V
125°C
-2.5V
-2.0V
25°C
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
-VGS(Volts)
-VDS (Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
160
140
120
100
80
1.6
1.4
1.2
1.0
0.8
ID=-2A, VGS=-4.5V
ID=-3A, VGS=-10V
VGS=-2.5V
VGS=-4.5V
ID=-1A, VGS=-2.5V
60
VGS=-10V
40
20
0
2
4
6
8
10
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
200
180
160
140
120
100
80
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
125°C
ID=-3A
125°C
25°C
25°C
60
40
0.0
0.2
0.4
0.6
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO3701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
5
4
3
2
1
0
ID=-3A
Ciss
600
400
200
0
Coss
Crss
0
1
2
3
4
5
6
0
5
10
15
20
-Qg (nC)
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
10µs
TA=25°C
RDS(ON)
limited
100µs
1ms
10ms
0.1s
1s
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=110°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO3701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
100
80
60
40
20
0
10
1
125°C
f = 1MHz
0.1
0.01
0.001
25°C
0.4
0.0
0.2
0.6
0.8
1.0
1.2
1.4
0
5
10
15
20
VF (Volts)
VKA (Volts)
Figure 12: Schottky Forward Characteristics
Figure 13: Schottky Capacitance Characteristics
0.5
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
0.4
0.3
0.2
0.1
IF=0.5A
VR=16V
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Temperature (°C)
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
Figure 14: Schottky Forward Drop vs.
Junction Temperature
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=135°C/W
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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