AOB470L [AOS]
75V N-Channel MOSFET; 75V N沟道MOSFET
| 型号： | AOB470L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 75V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：311K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT470/AOB470L
75V N-Channel MOSFET
General Description
Product Summary
VDS
The AOT470/AOB470L uses advanced trench technology
and design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
75V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100A
< 10.5mΩ
100% UIS Tested
100% Rg Tested
TO-263
D2PAK
TO220
Top View
Bottom View
D
Top View
Bottom View
D
D
D
D
G
S
S
G
G
S
D
D
G
G
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
75
V
V
Gate-Source Voltage
VGS
±25
100
78
TC=25°C
Continuous Drain
Current G
ID
TC=100°C
A
Pulsed Drain Current C
IDM
200
10
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.3mH C
IDSM
A
8
IAS, IAR
45
A
EAS, EAR
300
268
134
2.1
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
TA=25°C
PDSM
W
°C
Power Dissipation A
1.3
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
10
Max
12
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
45
60
RθJC
0.45
0.56
Rev2: Mar 2012
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Page 1 of 6
AOT470/AOB470L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
75
V
VDS=75V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS= ±25V
VDS=VGS, ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=30A
TO220
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
1
4
µA
V
VGS(th)
ID(ON)
2
2.7
200
A
8.3
10.5
17
mΩ
TJ=125°C
13.7
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=30A
TO263
8
10.2
mΩ
VDS=5V, ID=30A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
90
S
IS=1A,VGS=0V
Maximum Body-Diode Continuous CurrentG
0.7
1
V
A
100
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
3760 4700 5640
pF
pF
pF
Ω
V
GS=0V, VDS=30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
280
110
1.5
400
180
3
520
250
4.5
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=30V, ID=30A
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
114
33
18
21
39
70
24
136
40
nC
nC
nC
ns
ns
ns
ns
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
25
VGS=10V, VDS=30V, RL=1Ω,
RGEN=3Ω
tD(off)
tf
trr
IF=30A, dI/dt=100A/µs
IF=30A, dI/dt=100A/µs
37
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
53
70
ns
Qrr
100
nC
143
185
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev2: Mar 2012
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Page 2 of 6
AOT470/AOB470L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
250
200
150
100
50
100
80
60
40
20
0
10V
VDS=5V
8V
6V
5.5V
125°C
25°C
-40°C
VGS=4.5V
8
0
0
2
4
6
10
3
3.5
4
4.5
5
5.5
6
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
2.2
2
13
12
11
10
9
VGS=10V
ID=30A
1.8
1.6
1.4
1.2
1
VGS=10V
8
7
0.8
0.6
6
0
20
40
60
ID (A)
80
100
-50 -25
0
25 50 75 100 125 150 175
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
25
20
15
10
5
1.0E+02
ID=30A
1.0E+01
1.0E+00
125°C
125°C
25°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
-40°C
25°C
0
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
4
8
12
16
20
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev2: Mar 2012
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Page 3 of 6
AOT470/AOB470L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
6
4
2
0
VDS=30V
ID=30A
8
Ciss
6
4
2
Coss
Crss
0
0
10
20
30
VDS (Volts)
40
50
60
0
20
40
60
80
100
120
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
800
600
400
200
0
1000.0
100.0
10.0
1.0
TJ(Max)=175°C
TC=25°C
10µs
RDS(ON)
limited
1ms
DC
10ms
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.56°C/W
PD
0.1
0.01
Ton
Single Pulse
0.0001
T
0.00001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev2: Mar 2012
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Page 4 of 6
AOT470/AOB470L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
300
250
TA=25°C
200
100
TA=100°C
150
100
50
TA=150°C
TA=125°C
10
0
1
10
100
1000
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note F)
100
125
150
175
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
10000
1000
100
10
120
TA=25°C
100
80
60
40
20
0
1
0.00001
0.001
0.1
10
1000
0
25
50
75
100
125
150
175
Pulse Width (s)
TCASE (°C)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note F)
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
RθJA=60°C/W
PD
0.01
Single Pulse
Ton
T
0.001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev2: Mar 2012
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Page 5 of 6
AOT470/AOB470L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev2: Mar 2012
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Page 6 of 6
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