AOD9N40 [AOS]
400V,8A N-Channel MOSFET; 400V ， 8A N沟道MOSFET
| 型号： | AOD9N40 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 400V,8A N-Channel MOSFET |
| 文件： | 总6页 (文件大小：266K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD9N40
400V,8A N-Channel MOSFET
General Description
Product Summary
The AOD9N40 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply
designs.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
500V@150℃
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
8A
<0.8Ω
100% UIS Tested!
100% Rg Tested!
TO252
DPAK
D
Top View
Bottom View
D
D
G
G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
400
±30
8
V
V
VGS
Continuous Drain
CurrentB
Pulsed Drain Current C
Avalanche Current C
TC=25°C
ID
TC=100°C
5
A
IDM
22
3.2
150
300
5
IAR
A
C
Repetitive avalanche energy
Single pulsed avalanche energy H
Peak diode recovery dv/dt
TC=25°C
EAR
EAS
dv/dt
mJ
mJ
V/ns
W
125
PD
Power Dissipation B
o
Derate above 25oC
1
W/ C
-50 to 150
TJ, TSTG
TL
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
°C
300
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Symbol
RθJA
Typical
Maximum
Units
°C/W
°C/W
°C/W
45
-
55
0.5
1
RθCS
RθJC
0.7
Rev0: Dec 2010
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Page 1 of 6
AOD9N40
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
400
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
500
0.4
V
BVDSS
V/ oC
ID=250µA, VGS=0V
/∆TJ
VDS=400V, VGS=0V
1
10
IDSS
µA
VDS=320V, TJ=125°C
IGSS
VGS(th)
RDS(ON)
gFS
V
DS=0V, VGS=±30V
±100
4.5
0.8
Gate-Body leakage current
Gate Threshold Voltage
nΑ
V
VDS=5V ID=250µA
3.4
4
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
V
V
GS=10V, ID=4A
DS=40V, ID=4A
0.64
8
Ω
S
VSD
IS=1A,VGS=0V
0.75
1
8
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
A
ISM
22
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
500
45
2
630
73
760
100
9
pF
pF
pF
Ω
V
V
GS=0V, VDS=25V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
5.7
2.6
1.2
4.0
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
10
13.1
3.9
4.8
17
16
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=320V, ID=8A
V
GS=10V, VDS=200V, ID=8A,
52
RG=25Ω
tD(off)
tf
25
30
trr
IF=8A,dI/dt=100A/µs,VDS=100V
IF=8A,dI/dt=100A/µs,VDS=100V
150
1.5
195
1.9
240
2.3
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting
the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=3.2A, VDD=150V, RG=10Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Dec 2010
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Page 2 of 6
AOD9N40
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
16
12
8
100
10
1
VDS=40V
-55°C
10V
6.5V
125°C
6V
4
VGS=5.5V
25°C
0.1
0
2
4
6
8
10
0
5
10
15
20
25
30
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
2.0
3
2.5
2
1.6
1.2
0.8
0.4
0.0
VGS=10V
ID=4A
VGS=10V
1.5
1
0.5
0
0
3
6
9
12
15
18
-100
-50
0
50
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
150
200
I
D (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1.0E+02
1.0E+01
1.1
125°C
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
25°C
1
0.9
0.8
0
-100
-50
50
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
100
150
200
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
Rev0: Dec 2010
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Page 3 of 6
AOD9N40
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
1000
100
10
Ciss
VDS=320V
ID=8A
Coss
6
Crss
3
0
1
0
4
8
12
16
20
0.1
1
10
100
VDS (Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100
800
600
400
200
0
10µs
TJ(Max)=150°C
TC=25°C
10
1
RDS(ON)
limited
100µs
1ms
10ms
TJ(Max)=150°C
TC=25°C
DC
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
1
10
100
1000
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0: Dec 2010
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Page 4 of 6
AOD9N40
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
120
90
60
30
0
10
8
6
4
2
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
CASE (°C)
T
CASE (°C)
Figure 12: Power De-rating (Note B)
Figure 13: Current De-rating (Note B)
400
300
200
100
0
TA=25°C
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
0.1
0.01
0.001
0.0001
PD
Ton
T
Single Pulse
0.01
0.0001
0.001
0.1
1
10
100
1000
10000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Rev0: Dec 2010
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Page 5 of 6
AOD9N40
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching TestCircuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Rev0: Dec 2010
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Page 6 of 6
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