AOI482 [AOS]
100V N-Channel MOSFET; 100V N沟道MOSFET
| 型号： | AOI482 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 100V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：305K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD482/AOI482
100V N-Channel MOSFET
General Description
Product Summary
VDS
100V
The AOD482/AOI482 combines advanced trench
MOSFET technology with a low resistance package to
provide extremely low RDS(ON). This device is ideal for
boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
32A
< 37mΩ
< 42mΩ
100% UIS Tested
100% Rg Tested
TO252
DPAK
TO-251A
IPAK
D
Top View
Bottom View
TopView
Bottom View
D
D
G
D
G
S
D
S
S
G
S
D
G
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
100
±20
32
V
V
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
ID
TC=100°C
22
A
A
IDM
70
TA=25°C
TA=70°C
5
4
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
35
A
EAS, EAR
61
mJ
TC=25°C
Power Dissipation B
TC=100°C
100
50
PD
W
TA=25°C
2.5
PDSM
W
°C
Power Dissipation A
1.6
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
14.2
39
Max
20
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
50
RθJC
0.8
1.5
Rev 2 : July 2011
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Page 1 of 6
AOD482/AOI482
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
100
V
VDS=100V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
V
DS=0V, VGS= ±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
2.7
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=10A
1.6
70
2.1
A
30
63
32
45
0.7
37
76
42
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=10A
mΩ
S
VDS=5V, ID=10A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
1
V
Maximum Body-Diode Continuous Current
54
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1300 1630 2000
pF
pF
pF
Ω
V
GS=0V, VDS=50V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
70
30
100
50
130
70
VGS=0V, VDS=0V, f=1MHz
0.3
0.75
1.1
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
26
14
4
34
18
6
44
22
8
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=50V, ID=10A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
5
9
13
7
VGS=10V, VDS=50V, RL=5Ω,
RGEN=3Ω
7
ns
tD(off)
tf
29
7
ns
ns
trr
IF=10A, dI/dt=500A/µs
IF=10A, dI/dt=500A/µs
22
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
32
42
ns
Qrr
140
nC
200
260
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2 : July 2011
www.aosmd.com
Page 2 of 6
AOD482/AOI482
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
40
30
20
10
0
50
40
30
20
10
0
VDS=5V
10V
7V
3.5V
4V
125°C
25°C
VGS=3V
1
2
3
4
5
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
50
2.8
2.4
2
45
40
35
30
25
20
VGS=10V
ID=10A
VGS=4.5V
VGS=10V
1.6
1.2
0.8
VGS=4.5V
ID=10A
0
25
50
75
100 125 150 175 200
0
5
10
15
20
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
80
70
60
50
40
30
20
1.0E+02
1.0E+01
ID=10A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
0.8
25°C
0.0
0.2
0.4
0.6
1.0
1.2
2
4
6
8
10
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2 : July 2011
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Page 3 of 6
AOD482/AOI482
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
10
VDS=50V
ID=10A
2500
2000
1500
1000
500
8
Ciss
6
4
2
Crss
Coss
0
0
0
5
10
15
20
g (nC)
25
30
35
40
0
20
40
V
60
DS (Volts)
80
100
Q
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
100.0
10.0
1.0
TJ(Max)=175°C
TC=25°C
10µs
100µs
RDS(ON)
limited
1ms
10ms
DC
TJ(Max)=175°C
TC=25°C
0.1
0.0
40
0.01
0.1
1
10
100
1000
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2 : July 2011
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Page 4 of 6
AOD482/AOI482
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
120
TA=25°C
TA=100°C
100
80
TA=150°C
10
60
40
20
0
TA=125°C
1
1
10
100
1000
0
25
50
75
100
125
150
175
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
40
TA=25°C
30
20
10
0
1
0.00001
0.001
0.1
10
1000
0
25
50
75
TCASE (°C)
Figure 14: Current De-rating (Note F)
100
125
150
175
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
θJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
R
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 2 : July 2011
www.aosmd.com
Page 5 of 6
AOD482/AOI482
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 2 : July 2011
www.aosmd.com
Page 6 of 6
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