AOI4N60 [AOS]
600V,4A N-Channel MOSFET; 600V ， 4A N沟道MOSFET
| 型号： | AOI4N60 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 600V,4A N-Channel MOSFET |
| 文件： | 总6页 (文件大小：539K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD4N60/AOI4N60/AOU4N60
600V,4A N-Channel MOSFET
General Description
Product Summary
The AOD4N60 & AOI4N60 & AOU4N60 have been
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
700V@150℃
4A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 2.3Ω
100% UIS Tested!
100% Rg Tested!
TO252
DPAK
TO251A
IPAK
TO251
Top View
Bottom View
Top View
Bottom View
Top View
Bottom View
D
D
D
G
S
G
S
S
G
D
S
G
G
D
D
S
D
S
G
G
S
AOI4N60
AOU4N60
AOD4N60
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
600
V
V
Gate-Source Voltage
VGS
±30
4
TC=25°C
Continuous Drain
CurrentB
Pulsed Drain Current C
Avalanche Current C
ID
TC=100°C
2.6
14
A
IDM
IAR
2.8
118
A
Repetitive avalanche energy C
EAR
EAS
dv/dt
mJ
Single plused avalanche energy H
Peak diode recovery dv/dt
TC=25°C
235
5
mJ
V/ns
W
W/ oC
104
PD
Power Dissipation B
Derate above 25oC
0.83
Junction and Storage Temperature Range
TJ, TSTG
TL
-50 to 150
°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
300
°C
Thermal Characteristics
Parameter
Symbol
RθJA
Typical
Maximum
Units
Maximum Junction-to-Ambient A,G
43
55
°C/W
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
RθCS
-
0.5
1.2
°C/W
°C/W
RθJC
1
Rev2: Jan 2012
www.aosmd.com
Page 1 of 6
AOD4N60/AOI4N60/AOU4N60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250ꢀA, VGS=0V, TJ=25°C
ID=250ꢀA, VGS=0V, TJ=150°C
600
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
700
V
BVDSS
/∆TJ
V/ oC
ID=250ꢀA, VGS=0V
VDS=600V, VGS=0V
0.67
1
IDSS
µA
10
VDS=480V, TJ=125°C
VDS=0V, VGS=±30V
VDS=5V, ID=250µA
IGSS
VGS(th)
RDS(ON)
gFS
±100
Gate-Body leakage current
Gate Threshold Voltage
nΑ
3.4
4.1
1.8
6
4.5
2.3
V
Ω
S
V
A
A
VGS=10V, ID=2A
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VDS=40V, ID=2A
IS=1A,VGS=0V
VSD
0.76
4
1
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
ISM
14
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
420
35
528
53
640
70
7
pF
pF
pF
Ω
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
2.5
1.2
4.8
2.5
3.8
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
9.5
2.8
2.2
12
3.6
4.4
17
26
34
21
14.5
4.5
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=480V, ID=4A
6.6
VGS=10V, VDS=300V, ID=4A,
RG=25Ω
tD(off)
tf
trr
IF=4A,dI/dt=100A/µs,VDS=100V
IF=4A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
150
1.9
190
2.4
230
3
ns
Qrr
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=2.8A, VDD=150V, RG=10Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev2: Jan 2012
www.aosmd.com
Page 2 of 6
AOD4N60/AOI4N60/AOU4N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
8
7
6
5
4
3
2
1
0
100
10
1
10V
VDS=40V
-55°C
6.5V
125°C
6V
VGS=5.5V
25°C
0.1
0
5
10
15
20
25
30
2
4
6
8
10
VDS (Volts)
Fig 1: On-Region Characteristics
VGS(Volts)
Figure 2: Transfer Characteristics
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
3
2.5
2
VGS=10V
ID=2A
VGS=10V
1.5
1
0.5
0
-100
-50
0
50
100
150
200
0
2
4
6
8
10
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gat
Voltage
Figure 4: On-Resistance vs. Junction
Temperature
1.2
1.0E+02
1.0E+01
125°C
1.1
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1
0.9
0.8
25°C
-100
-50
0
50
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
100
150
200
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
Rev2: Jan 2012
www.aosmd.com
Page 3 of 6
AOD4N60/AOI4N60/AOU4N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
1000
100
10
VDS=480V
ID=2A
Ciss
Coss
6
3
Crss
0
1
0
3
6
9
12
15
18
0.1
1
10
100
VDS (Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100
800
600
400
200
0
TJ(Max)=150°C
TC=25°C
10
1
10µs
RDS(ON)
100µs
DC
1ms
10ms
0.1
0.01
TJ(Max)=150°C
1
10
100
1000
0.00001 0.0001 0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=1.2°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.000001
0.00001
0.0001
0.001
Pulse Width (s)
0.01
0.1
1
10
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev2: Jan 2012
www.aosmd.com
Page 4 of 6
AOD4N60/AOI4N60/AOU4N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
5
4
3
2
1
0
0
25
50
75
100
125
150
0
25
50
TCASE (°C)
75
100
125
150
TCASE (°C)
Figure 12: Power De-rating (Note B)
Figure 13: Current De-rating (Note B)
500
400
300
200
100
0
TJ(Max)=150°C
TA=25°C
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
θJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
0.1
0.01
0.001
0.0001
PD
Ton
Single Pulse
0.01
T
0.0001
0.001
0.1
Pulse Width (s)
1
10
100
1000
10000
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Rev2: Jan 2012
www.aosmd.com
Page 5 of 6
AOD4N60/AOI4N60/AOU4N60
Gatte Charge Test Circcuit &Waveform
Vgss
Qgg
1
+
VDC
+
VVdss
Q
g
s
Qgd
VDC
-
-
DDUT
Vgs
Ig
Chaargee
Resistiive Swwitching TestCCirrcuit && WWaavveeffoorrmmss
RRL
Vdss
VVds
9
+
DUTT
Vdd
Vgs
VDC
RRg
-
1
Vgs
Vgss
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR=1/2LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTestCircuit &Waveforms
Qrr =- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Rev2: Jan 2012
www.aosmd.com
Page 6 of 6
相关型号：
©2020 ICPDF网 联系我们和版权申明