AOI472A [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOI472A |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总7页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOI472A
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOI472A is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with
controlled switching behavior. This universal technology
is well suited for PWM, load switching and general
purpose applications.
V
DS (V) =25V
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
ID = 50A
R
DS(ON) < 5.2mΩ
DS(ON) < 9.5mΩ
R
100% UIS Tested!
100% Rg Tested!
- RoHS Compliant
- Halogen Free
TO-251A
IPAK
D
Bottom View
Top View
D
G
S
G
D
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
25
±20
50
V
VGS
ID
IDM
IDSM
Gate-Source Voltage
Continuous Drain
Current G
V
A
TC=25°C
TC=100°C
39
Pulsed Drain Current C
100
17
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Repetitive avalanche energy L=50uHC
A
13
IAR
50
A
EAR
63
mJ
TC=25°C
Power Dissipation B
TC=100°C
50
PD
W
25
TA=25°C
2.5
PDSM
W
Power Dissipation A
TA=70°C
1.6
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
15
Max
20
50
3
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
41
Steady-State
Steady-State
RθJC
2.1
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOI472A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
25
V
VDS=25V, VGS=0V
10
50
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
100
2.5
nA
V
VGS(th)
ID(ON)
1.2
2
100
A
V
GS=10V, ID=30A
4.3
6.2
8
5.2
7.4
9.5
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
VDS=5V, ID=30A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
65
0.7
S
V
A
1
Maximum Body-Diode Continuous Current
50
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1500 1800 2200
pF
pF
pF
Ω
VGS=0V, VDS=12.5V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
340
200
1.1
445
285
1.6
580
400
2.4
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
25
12
31
15
4.8
8.9
8
40
20
7
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
V
GS=10V, VDS=12.5V, ID=30A
3.5
6.5
13
VGS=10V, VDS=12.5V,
10.4
29
9
ns
RL=0.42Ω, RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF=30A, dI/dt=500A/µs
IF=30A, dI/dt=500A/µs
9.5
17
12
21
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
15
26
ns
Qrr
nC
2
A. The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25°C. The Power
A
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial T
J
=25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
2
H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25°C.
A
Rev0 : Dec-08
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOI472A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
80
60
40
20
0
10V
5V
VDS=5V
4.5V
4V
7V
125°C
VGS=3.5V
25°C
0
1
2
3
4
5
0
1
2
3
4
5
VGS(Volts)
V
DS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
12
10
8
1.8
1.6
1.4
1.2
1
VGS=10V
ID=30A
VGS=4.5V
6
VGS=4.5V
4
VGS=10V
ID=20A
2
0.8
0
0
25
50
75
100 125 150 175 200
0
5
10
15
20
25
30
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
20
15
10
5
1.0E+02
1.0E+01
ID=30A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
0
0.0
0.2
0.4
0.6
SD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.8
1.0
1.2
2
4
6
8
10
V
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOI472A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2800
2400
2000
1600
1200
800
VDS=12.5V
ID=30A
8
Ciss
6
4
Coss
2
400
Crss
0
0
0
5
10
15
20
25
30
35
0
5
10 15
VDS (Volts)
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
TJ(Max)=175°C
TC=25°C
10µs
RDS(ON)
100µs
DC
1ms
10ms
TJ(Max)=175°C
TC=25°C
0.1
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
V
DS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TC+PDM.ZθJC.RθJC
T
RθJC=3°C/W
PD
0.1
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOI472A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
60
40
20
60
50
40
30
20
10
0
TA=25°C
TA=100°C
TA=125°C
TA=150°C
0
0
25
50
75
100
125
150
175
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
60
50
40
30
20
10
0
TA=25°C
1
0.00001
0.001
0.1
10
1000
0
25
50
75
100
125
150
175
T
CASE (°C)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOI472A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
16
14
12
10
8
3
30
25
20
15
10
5
12
10
8
di/dt=700A/us
Qrr
di/dt=700A/us
125ºC
125ºC
25ºC
2.5
2
25ºC
trr
1.5
1
6
125ºC
25ºC
125ºC
6
4
Irm
4
S
25ºC
2
0.5
0
2
0
0
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
IB (A)
IB (A)
Figure 17: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
Figure 18: Diode Reverse Recovery Time and Soft
Coefficient vs. Conduction Current
20
2.5
30
25
20
15
10
5
10
Is=20A
Is=20A
125ºC
2
8
6
4
2
0
15
10
5
125ºC
25ºC
25ºC
1.5
1
trr
S
125º
25ºC
Qrr
125ºC
25ºC
0.5
Irm
0
0
0
0
100 200 300 400 500 600 700 800
0
100 200 300 400 500 600 700 800
di/dt (A/µs)
di/dt (A/µs)
Figure 20: Diode Reverse Recovery Time and Soft
Figure 19: Diode Reverse Recovery Charge and
Coefficient vs. di/dt
Peak Current vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOI472A
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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