AON4803_12 [AOS]
20V Dual P-Channel MOSFET; 双路20V P沟道MOSFET
| 型号： | AON4803_12 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 20V Dual P-Channel MOSFET |
| 文件： | 总5页 (文件大小：313K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON4803
20V Dual P-Channel MOSFET
General Description
Product Summary
VDS
-20V
The AON4803 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=-4.5V)
RDS(ON) (at VGS=-4.5V)
RDS(ON) (at VGS =-2.5V)
RDS(ON) (at VGS =-1.8V)
-3.4A
< 90mΩ
< 120mΩ
< 165mΩ
D2
DFN 3x2A
D1
Top View
Bottom View
Top View
1
8
S1
G1
S2
G2
D1
D1
D2
D2
2
3
7
6
4
5
G2
G1
S2
S1
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±8
-3.4
V
A
TA=25°C
TA=70°C
Continuous Drain
Current
ID
-2.7
Pulsed Drain Current C
IDM
PD
-15
TA=25°C
TA=70°C
1.7
W
°C
Power Dissipation B
1.1
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
75
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t
≤ 10s
51
88
28
RθJA
Steady-State
Steady-State
110
35
RθJL
Rev 2: July 2012
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Page 1 of 5
AON4803
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-20
V
VDS=-20V, VGS=0V
-1
µA
-5
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
VDS=0V, VGS=±8V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-4.5V, ID=-3.4A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-1
nA
V
VGS(th)
ID(ON)
-0.4
-15
-0.65
A
65
90
90
125
120
165
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=-2.5V, ID=-2.5A
80
mΩ
mΩ
S
VGS=-1.8V, ID=-1.5A
100
12
VDS=-5V, ID=-3.4A
IS=-1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
-0.7
-1
-2
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
560
80
745
pF
pF
pF
Ω
VGS=0V, VDS=-10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
70
VGS=0V, VDS=0V, f=1MHz
15
23
8
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
6.1
0.6
1.6
10
nC
nC
nC
ns
ns
ns
ns
VGS=-4.5V, VDS=-10V, ID=-3.4A
VGS=-4.5V, VDS=-10V, RL=2.9Ω,
RGEN=3Ω
12
tD(off)
tf
44
22
trr
IF=-3.4A, dI/dt=100A/µs
IF=-3.4A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
21
ns
Qrr
nC
7.5
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: July 2012
www.aosmd.com
Page 2 of 5
AON4803
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
20
15
10
5
-4.5V
VDS=-5V
-3.0V
-2.5V
125°C
-2.0V
25°C
VGS=-1.5V
4
0
0
0
1
2
3
4
0
1
2
3
5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
90
1.4
1.2
1
VGS=-2.5V
ID=-2.5A
80
70
60
50
40
VGS=-1.8V
ID=-1.5A
VGS=-2.5V
VGS=-4.5V
VGS=-4.5V
ID=-3.4A
0.8
0
2
4
6
8
10
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
180
140
100
60
1.0E+02
1.0E+01
ID=-3.4A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
20
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2: July 2012
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Page 3 of 5
AON4803
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
1400
VDS=-10V
ID=-3.4A
1200
1000
800
600
400
200
0
Ciss
Coss
Crss
0
2
4
6
8
10
0
5
10
15
20
Qg (nC)
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
10000
1000
100
10
100.0
10.0
1.0
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
0.1
10s
DC
TJ(Max)=150°C
TA=25°C
1
0.0
0.00001
0.001
0.1
10
1000
0.01
0.1
1
10
100
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
RθJA=110°C/W
PD
0.01
0.001
Single Pulse
0.001
Ton
T
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2: July 2012
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Page 4 of 5
AON4803
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
BVDSS
Vgs
Vdd
+
VDC
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Rev 2: July 2012
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Page 5 of 5
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