AON6403 [AOS]
30V P-Channel MOSFET; 30V P沟道MOSFET
| 型号： | AON6403 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V P-Channel MOSFET |
| 文件： | 总6页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON6403
30V P-Channel MOSFET
General Description
Product Summary
VDS
-30V
The AON6403 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS= -10V)
-85A
R
DS(ON) (at VGS= -10V)
< 3.1mΩ
< 4.3mΩ
RDS(ON) (at VGS = -4.5V)
100% UIS Tested
100% Rg Tested
DFN5X6
D
Top View
Top View
Bottom View
1
2
3
4
8
7
6
5
G
PIN1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
-30
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±20
TC=25°C
-85
Continuous Drain
Current G
ID
TC=100°C
-67
A
Pulsed Drain Current C
IDM
-280
-21
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDSM
A
-17
IAR
-72
A
EAR
259
mJ
TC=25°C
Power Dissipation B
TC=100°C
83
PD
W
33
TA=25°C
2.3
PDSM
W
°C
Power Dissipation A
1.4
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
14
40
1
Max
17
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Steady-State
Steady-State
55
RθJC
1.5
Rev 2: November 2010
www.aosmd.com
Page 1 of 6
AON6403
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
VDS=-30V, VGS=0V
-1
µA
-5
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
V
DS=0V, VGS= ±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-2.2
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-20A
-1.2
-1.7
-280
A
2.6
3.6
3.5
82
3.1
4.4
4.3
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-20A
mΩ
S
VDS=-5V, ID=-20A
IS=-1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
-0.7
-1
V
Maximum Body-Diode Continuous Current
-85
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
6100 7600 9120
pF
pF
pF
Ω
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
930
630
1
1320 1720
1050 1470
V
V
GS=0V, VDS=-15V, f=1MHz
GS=0V, VDS=0V, f=1MHz
GS=-10V, VDS=-15V, ID=-20A
GS=-10V, VDS=-15V,
2
4
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
130
63
163
79
22
33
13
18
135
52
26
78
196
95
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
V
V
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
18
26
20
46
ns
RL=0.75Ω, RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF=-20A, dI/dt=500A/µs
IF=-20A, dI/dt=500A/µs
21
63
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
32
94
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.Maximum UIS current limited by test equipment .
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev 2: Nov. 2010
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: November 2010
www.aosmd.com
Page 2 of 6
AON6403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
150
-3.5V
-4V
VDS=-5V
120
90
60
30
0
120
90
60
30
0
-3V
-10V
125°C
2
VGS=-2.5V
25°C
0
1
3
4
5
0
1
2
3
4
5
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
5
4
3
2
1
1.6
1.4
1.2
1
VGS=-10V
ID=-20A
VGS=-4.5V
VGS
=-4.5V
ID=-20A
VGS=-10V
0.8
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
I
D (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
9
8
7
6
5
4
3
2
1
1.0E+02
1.0E+01
ID=-20A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2: November 2010
www.aosmd.com
Page 3 of 6
AON6403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
12000
VDS=-15V
ID=-20A
10000
8000
6000
4000
2000
0
Ciss
6
4
Coss
2
Crss
0
0
30
60
90
g (nC)
120
150
180
0
5
10
15
-VDS (Volts)
20
25
30
Q
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
400
350
300
250
200
150
100
50
1000.0
100.0
10.0
1.0
RDS(ON)
10µs
TJ(Max)=150°C
TC=25°C
limited
100µs
1ms
10ms
DC
0.1
TJ(Max)=150°C
TC=25°C
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
PD
0.1
0.01
Ton
T
Single Pulse
0.0001
0.00001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2: November 2010
www.aosmd.com
Page 4 of 6
AON6403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
230.0
200.0
170.0
140.0
110.0
80.0
90
80
70
60
50
40
30
20
10
0
TA=25°C
TA=150°C
TA=100°C
TA=125°C
50.0
20.0
0
25
50
75
100
125
150
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
T
CASE (°C)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
100
80
60
40
20
0
TA=25°C
1
0.0001
0.01
1
100
10000
0
25
50
75
100
125
150
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
RθJA=55°C/W
PD
0.01
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 2: November 2010
www.aosmd.com
Page 5 of 6
AON6403
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
f
td(off)
td(on)
t
r
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
BVDSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Rev 2: November 2010
www.aosmd.com
Page 6 of 6
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