AON6450_11 [AOS]
100V N-Channel MOSFET; 100V N沟道MOSFET
| 型号： | AON6450_11 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 100V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：279K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON6450
100V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
The AON6450 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well
suited for PWM, load switching and general purpose
applications.
VDS
100V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 7V)
52A
< 14.5mΩ
< 17.5mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
D
Top View
Top View
Bottom View
1
8
2
3
7
6
4
5
G
PIN1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
100
±25
52
V
V
VGS
TC=25°C
Continuous Drain
Current
ID
TC=100°C
33
A
Pulsed Drain Current C
IDM
110
TA=25°C
TA=70°C
9
Continuous Drain
Current
IDSM
A
7
41
Avalanche Current C
IAR
A
Repetitive avalanche energy L=0.1mH C
EAR
84
mJ
TC=25°C
Power Dissipation B
TC=100°C
83
PD
W
33
TA=25°C
2.3
PDSM
W
°C
Power Dissipation A
1.4
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
14
40
1
Max
17
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
55
RθJC
1.5
Rev 1: May 2011
www.aosmd.com
Page 1 of 7
AON6450
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
100
V
VDS=100V, VGS=0V
10
µA
50
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
V
DS=0V, VGS= ±25V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
3.8
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
2.8
3.3
110
A
12.1
22.8
14
14.5
27.5
17.5
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=7V, ID=20A
mΩ
S
VDS=5V, ID=20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
52
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current G
0.7
1
V
85
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2000 2570 3100
pF
pF
pF
Ω
VGS=0V, VDS=50V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
170
50
250
80
330
120
1.2
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=50V, ID=20A
VGS=10V, VDS=50V, RL=2.5Ω,
0.4
0.8
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
34
11
8
43
14
52
17
19
nC
nC
nC
ns
ns
ns
ns
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
13.5
15
5
RGEN=3Ω
tD(off)
tf
28.5
5
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
17
75
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
24
31
ns
Qrr
nC
108
140
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: May 2011
www.aosmd.com
Page 2 of 7
AON6450
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
110
100
90
80
70
60
50
40
30
20
10
0
110
100
90
80
70
60
50
40
30
20
10
0
10V
VDS=5V
7V
7.5V
6.5V
6V
125°C
VGS=5.5V
25°C
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
VGS(Volts)
V
DS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
16
15
14
13
12
11
2.2
2
VGS=10V
ID=20A
VGS=7V
1.8
1.6
1.4
1.2
1
VGS=10V
VGS=7V
ID=20A
0.8
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
30
25
20
15
10
5
1.0E+02
1.0E+01
ID=20A
125°C
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
25°C
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
5
6
7
8
9
10
VGS (Volts)
(Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: May 2011
www.aosmd.com
Page 3 of 7
AON6450
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3500
VDS=50V
ID=20A
3000
2500
2000
1500
1000
500
Ciss
8
6
4
Coss
2
Crss
0
0
0
10
20
30
40
50
0
20
40
V
60
DS (Volts)
80
100
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
400
350
300
250
200
150
100
50
1000.0
100.0
10.0
1.0
TJ(Max)=150°C
TC=25°C
RDS(ON)
limited
10µs
100µs
DC
1ms
TJ(Max)=150°C
TC=25°C
0.1
0.0
0
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: May 2011
www.aosmd.com
Page 4 of 7
AON6450
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
TA=25°C
TA=100°C
TA=150°C
TA=125°C
0
25
50
75
100
125
150
0.000001
0.00001
Time in avalanche, tA (s)
0.0001
T
CASE (°C)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
60
50
40
30
20
10
0
TA=25°C
1
0.0001
0.01
1
100
10000
0
25
50
75
100
125
150
T
CASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
10
1
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
θJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
R
0.1
0.01
PD
Ton
T
Single Pulse
0.1
0.001
0.0001
0.001
0.01
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Rev 1: May 2011
www.aosmd.com
Page 5 of 7
AON6450
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
210
180
150
120
90
26
24
22
20
18
16
14
12
10
8
30
25
20
15
10
5
2
125ºC
di/dt=800A/µs
125ºC
25ºC
di/dt=800A/µs
1.6
1.2
0.8
0.4
trr
25ºC
125ºC
Qrr
60
25ºC
S
30
25ºC
125ºC
Irm
0
0
0
0
5
10
15
20
25
30
0
5
10
15
IS (A)
20
25
30
I
S (A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
210
26
22
18
14
10
6
40
35
30
25
20
15
10
5
2
Is=20A
Is=20A
180
150
120
90
125ºC
25ºC
125ºC
1.5
1
trr
25ºC
125ºC
25ºC
Qrr
60
25ºC
0.5
S
30
125ºC
Irm
0
2
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Rev 1: May 2011
www.aosmd.com
Page 6 of 7
AON6450
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 1: May 2011
www.aosmd.com
Page 7 of 7
相关型号：
©2020 ICPDF网 联系我们和版权申明