AON6716 [AOS]
30V N-Channel MOSFET; 30V N沟道MOSFET
| 型号： | AON6716 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：285K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON6716
30V N-Channel MOSFET
TM
SRFET
General Description
Product Summary
SRFETTM AON6716 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications.
VDS
30V
ID (at VGS=10V)
85A
R
DS(ON) (at VGS=10V)
< 2.8mΩ
< 4.2mΩ
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
DFN5X6
D
Top View
Bottom View
Top View
SRFETTM
Soft Recovery MOSFET:
1
2
3
4
8
7
6
5
Integrated Schottky Diode
G
PIN1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
30
±20
85
V
V
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
ID
TC=100°C
67
A
A
IDM
310
23
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDSM
18
IAR
59
A
EAR
174
83
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
33
TA=25°C
2.3
PDSM
W
°C
Power Dissipation A
1.4
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
17
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
14
40
1
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Steady-State
Steady-State
55
RθJC
1.5
Rev 1: November 2010
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Page 1 of 7
AON6716
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
0.1
mA
20
IDSS
Zero Gate Voltage Drain Current
TJ=125°C
TJ=125°C
VDS=0V, VGS= ±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
2.2
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
1.2
1.7
310
A
2.3
3.4
2.8
4.1
4.2
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
3.3
mΩ
S
VDS=5V, ID=20A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
120
0.45
0.7
85
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
3300 4100 4900
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
560
240
0.2
800
400
0.4
1050
560
0.6
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
58
29
14
7
72
36
17
12
11
5.5
40
10
86
43
20
17
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
ns
tD(off)
tf
ns
ns
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
12
25
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
15
31
18
37
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: November 2010
www.aosmd.com
Page 2 of 7
AON6716
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
150
120
90
60
30
0
4V
4.5V
VDS=5V
120
90
60
30
0
5V
10V
3.5V
125°C
VGS=3V
25°C
0
1
2
3
4
5
0
1
2
3
4
5
6
V
DS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
6
5
4
3
2
1
0
1.8
1.6
1.4
1.2
1
VGS=10V
ID=20A
VGS=4.5V
VGS=10V
VGS=4.5V
ID=20A
0.8
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
8
7
6
5
4
3
2
1
1.0E+02
ID=20A
1.0E+01
1.0E+00
1.0E-01
1.0E-02
125°C
125°C
25°C
25°C
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
V
GS (Volts)
VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics
(Note E)
Rev 1: November 2010
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Page 3 of 7
AON6716
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
6000
5000
4000
3000
2000
1000
0
VDS=15V
ID=20A
8
Ciss
6
4
Coss
2
0
0
5
10
15
20
25
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
800
700
600
500
400
300
200
100
0
1000.0
100.0
10.0
1.0
RDS(ON)
limited
10µs
TJ(Max)=150°C
TC=25°C
100µs
1ms
DC
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
V
DS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TC+PDM.ZθJC.RθJC
θJC=1.5°C/W
T
R
PD
0.1
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: November 2010
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Page 4 of 7
AON6716
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
160
140
120
100
80
100
80
60
40
20
0
TA=25°C
TA=100°C
TA=125°C
60
TA=150°C
40
20
0
25
0
50
75
100
125
150
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
100
80
60
40
20
0
TA=25°C
1
0.00001
0.001
0.1
10
1000
0
25
50
75
100
125
150
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
RθJA=55°C/W
PD
0.01
0.001
Ton
Single Pulse
T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1: November 2010
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Page 5 of 7
AON6716
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
0.8
0.7
0.6
0.5
0.4
0.3
20A
VDS=30V
10A
5A
VDS=15V
IS=1A
0.2
0
50
100
Temperature (°C)
Figure 18: Diode Forward voltage vs. Junction
Temperature
150
200
0
50
100
Temperature (°C)
150
200
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
50
40
30
20
10
0
12
10
8
16
14
12
10
8
3
di/dt=800A/µs
125ºC
25ºC
di/dt=800A/µs
125ºC
2.5
2
trr
Qrr
25ºC
1.5
1
6
125ºC
25ºC
S
Irm
4
6
0.5
0
125ºC
25ºC
15
2
4
0
5
10
20
25
30
0
5
10
15
20
25
30
IS (A)
I
S (A)
Figure 18: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
Figure 19: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
45
10
20
18
16
14
12
10
8
2.2
1.7
1.2
0.7
0.2
Is=20A
Is=20A
40
35
30
25
20
15
10
5
125ºC
8
6
4
2
0
25ºC
trr
25ºC
125ºC
25ºC
125ºC
Qrr
S
25ºC
125º
Irm
6
0
4
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 20: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Figure 21: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Rev 1: November 2010
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Page 6 of 7
AON6716
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 1: November 2010
www.aosmd.com
Page 7 of 7
相关型号：
AON6718
Power Field-Effect Transistor, 80A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, GREEN, DFN-8
AOS
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