AON6816 [AOS]
30V Dual N-Channel AlphaMOS; 30V双N沟道AlphaMOS
| 型号： | AON6816 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V Dual N-Channel AlphaMOS |
| 文件： | 总6页 (文件大小：287K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON6816
30V Dual N-Channel AlphaMOS
General Description
Product Summary
VDS
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• ESD protection
• RoHS and Halogen-Free Compliant
30V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
16A
< 6.1mΩ
< 9.5mΩ
Typical ESD protection
HBM Class 2
Application
• DC/DC Converters
100% UIS Tested
100% Rg Tested
D1
D2
Top View
DFN5X6 EP2
1
8
7
6
5
S1
D1
D1
D2
D2
2
G1
G1
G2
3
S2
4
G2
S1
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
A
TC=25°C
16
Continuous Drain
CurrentG
ID
TC=100°C
13
Pulsed Drain Current C
IDM
64
TA=25°C
TA=70°C
17
Continuous Drain
Current
IDSM
A
14
Avalanche Current C
IAS
35
A
mJ
V
Avalanche energy L=0.05mH C
EAS
31
VDS Spike
100ns
VSPIKE
36
TC=25°C
TC=100°C
TA=25°C
TA=70°C
21
PD
W
Power Dissipation B
Power Dissipation A
8
2.8
PDSM
W
°C
1.8
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
35
65
5
Max
45
80
6
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
RθJC
Rev0: Mar 2012
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Page 1 of 6
AON6816
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
5
VDS=0V, VGS= ±20V
VDS=VGS,ID=250µA
VGS=10V, ID=16A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
±10
2.2
6.2
8.4
9.6
µA
VGS(th)
1.2
1.8
5
V
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
6.8
7.5
62
VGS=4.5V, ID=15A
VDS=5V, ID=16A
IS=1A,VGS=0V
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.7
1
V
Maximum Body-Diode Continuous CurrentG
16
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1540
485
448
1.7
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
0.8
2.6
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
33.4
19.7
3.3
15.0
7
45
27
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=15V, ID=16A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=10V, VDS=15V, RL=0.9Ω,
RGEN=3Ω
8.3
24
ns
tD(off)
tf
ns
10
ns
trr
IF=16A, dI/dt=500A/µs
IF=16A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
15.2
22.2
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Mar 2012
www.aosmd.com
Page 2 of 6
AON6816
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
10
0
30
20
10
0
3.5V
VDS=5V
4.5V
10V
3V
125°C
25°C
VGS=2.5V
0
1
2
3
4
5
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
10
8
1.6
1.4
1.2
1
VGS=10V
ID=16A
VGS=4.5V
6
VGS
=4.5V
ID=15A
4
VGS=10V
2
0.8
0
5
10
ID (A)
15
20
0
25
50
75
100 125 150 175 200
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. JunctionTemperature
1.0E+02
1.0E+01
11
9.5
8
ID=16A
1.0E+00
125°C
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
6.5
5
25°C
25°C
3.5
2
2
4
6
8
10
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev0: Mar 2012
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Page 3 of 6
AON6816
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2500
VDS=15V
ID=16A
8
2000
1500
1000
500
0
Ciss
6
4
Coss
2
Crss
0
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
VDS (Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
100µs
1ms
DC
10ms
100ms
TJ(Max)=150°C
TC=25°C
0.1
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=6°C/W
0.1
PD
0.01
0.001
Ton
T
Single Pulse
0.01
1E-05
0.0001
0.001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0: Mar 2012
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Page 4 of 6
AON6816
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
20
15
10
5
15
10
5
0
0
0
25
50
75
TCASE (°C)
100
125
150
0
25
50
75
TCASE (°C)
100
125
150
Figure 12: Power De-rating (Note F)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
1000
100
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=80°C/W
0.1
0.01
PD
Ton
Single Pulse
0.01
T
0.001
0.0001
0.001
0.1
1
10
100
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev0: Mar 2012
www.aosmd.com
Page 5 of 6
AON6816
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev0: Mar 2012
www.aosmd.com
Page 6 of 6
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