AON7200 [AOS]
30V N-Channel MOSFET; 30V N沟道MOSFET
| 型号： | AON7200 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：227K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON7200
30V N-Channel MOSFET
General Description
Product Summary
VDS
30V
The AON7200 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Conduction and
switching losses are minimized due to an extremely low
combination of RDS(ON) and Crss.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
40A
< 8mΩ
< 11mΩ
100% UIS Tested
100% Rg Tested
DFN 3x3 EP
D
Top View
Bottom View
Top View
1
8
7
6
5
2
3
4
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
30
V
V
Gate-Source Voltage
VGS
±20
40
TC=25°C
Continuous Drain
Current G
ID
TC=100°C
31
A
Pulsed Drain Current C
IDM
146
15.8
12.7
28
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDSM
A
IAS, IAR
A
EAS, EAR
39
mJ
TC=25°C
Power Dissipation B
TC=100°C
62
PD
W
25
TA=25°C
3.1
PDSM
W
°C
Power Dissipation A
2
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
30
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
40
75
2
RθJA
Steady-State
Steady-State
60
RθJC
1.6
Rev 5: Jul 2011
www.aosmd.com
Page 1 of 6
AON7200
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
2.4
nA
V
VGS(th)
ID(ON)
1.3
1.85
146
A
6.7
9.2
9
8
11
11
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=15A
mΩ
S
VDS=5V, ID=20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
60
0.7
IS=1A,VGS=0V
1
V
Maximum Body-Diode Continuous Current
30
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
870
340
22
1090 1300
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
490
38
640
53
VGS=0V, VDS=0V, f=1MHz
0.4
0.9
1.4
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
12
5
16
7
20
9
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
2
2.5
2.5
5
3
1.5
3.5
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
2
ns
tD(off)
tf
16
2
ns
ns
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
10
20
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
13
25
16
30
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 5: Jul 2011
www.aosmd.com
Page 2 of 6
AON7200
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
60
40
20
0
50
40
30
20
10
0
10V
4V
VDS=5V
4.5V
3.5V
125°C
VGS=3V
25°C
1
1.5
2
2.5
3
3.5
4
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
1.6
1.4
1.2
1
15
VGS=10V
ID=20A
12
9
VGS=4.5V
VGS=4.5V
ID=15A
6
VGS=10V
3
0.8
0
0
25
50
75
100
125
150
175
0
5
10
15
ID (A)
20
25
30
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. JunctionTemperature
(Note E)
40
35
30
25
20
15
10
5
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
125°C
25°C
125°C
25°C
0
2
4
6
8
10
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 5: Jul 2011
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Page 3 of 6
AON7200
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1800
1600
1400
1200
1000
800
600
400
200
0
VDS=15V
ID=20A
8
Ciss
6
4
Coss
2
Crss
0
0
3
6
9
12
15
18
0
5
10
15
20
25
30
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
500
400
300
200
100
0
1000.0
100.0
10.0
1.0
TJ(Max)=150°C
TC=25°C
10µs
100µs
RDS(ON)
1ms
1s
DC
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
0.00001 0.0001 0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2°C/W
1
0.1
PD
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 5: Jul 2011
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Page 4 of 6
AON7200
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
30
25
20
15
10
5
TA=25°C
TA=100°C
TA=150°C
TA=125°C
0
10
0.000001
0
25
50
75
100
125
150
0.00001
0.0001
0.001
Time in avalanche, tA (s)
TCASE (°C)
Figure 13: Power De-rating (Note F)
Figure 12: Single Pulse Avalanche capability
(Note C)
1000
50
40
30
20
10
0
TA=25°C
100
10
1
0
25
50
75
100
125
150
0.0001 0.001 0.01
0.1
1
10
100 1000
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
0.1
PD
0.01
0.001
Single Pulse
Ton
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 5: Jul 2011
www.aosmd.com
Page 5 of 6
AON7200
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 5: Jul 2011
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Page 6 of 6
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