AON7220 [AOS]
25V N-Channel MOSFET; 25V N沟道MOSFET![AON7220](http://pdffile.icpdf.com/pdf1/p00193/img/icpdf/AON722_1092193_icpdf.jpg)
型号: | AON7220 |
厂家: | ![]() |
描述: | 25V N-Channel MOSFET |
文件: | 总6页 (文件大小:394K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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AON7220
25V N-Channel MOSFET
General Description
Product Summary
VDS
25V
The AON7220 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition,switching behavior is well
controlled with a "Schottky style" soft recovery body
diode.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
50A
< 3mΩ
< 4mΩ
100% UIS Tested
100% Rg Tested
DFN 3.3x3.3
D
Top View
Bottom View
Top View
1
8
2
3
7
6
G
4
5
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
25
Drain-Source Voltage
Gate-Source Voltage
V
V
±12
50
VGS
TC=25°C
Continuous Drain
Current G
ID
TC=100°C
39
A
Pulsed Drain Current C
IDM
311
37
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
A
30
48
IAS, IAR
A
115
83
EAS, EAR
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
33
TA=25°C
6.2
PDSM
W
°C
Power Dissipation A
TA=70°C
4
-55 to 150
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Symbol
Typ
16
Max
20
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
45
55
1.1
1.5
RθJC
Rev 0: March 2011
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Page 1 of 6
AON7220
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
V
25
VDS=25V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
nA
V
100
1.8
VGS(th)
ID(ON)
0.7
1.3
A
311
2.5
3.5
3
4.2
4
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
mΩ
VGS=4.5V, ID=18A
3.2
V
DS=5V, ID=20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
160
0.66
IS=1A,VGS=0V
Maximum Body-Diode Continuous CurrentG
1
50
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
pF
pF
pF
Ω
2368 2961 3554
VGS=0V, VDS=12.5V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
686
19
981
66
1276
113
1.0
VGS=0V, VDS=0V, f=1MHz
0.3
0.67
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
nC
nC
nC
nC
ns
34
12
42.8
17.4
6
52
23
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=12.5V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
3.6
7.8
VGS=10V, VDS=12.5V,
ns
2.5
RL=0.625Ω, RGEN=3Ω
tD(off)
tf
ns
37.8
3.8
ns
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
14
31
18.1
39.2
22
47
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: March 2011
www.aosmd.com
Page 2 of 6
AON7220
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
4.5V
10V
VDS=5V
4.0V
3.5V
125°C
3V
25°C
VGS=2.5V
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
8
6
4
2
0
1.8
1.6
1.4
1.2
1.0
0.8
VGS=10V
ID=20A
VGS=4.5V
VGS=10V
VGS=4.5V
I =18A
D
0
25
50
75
100 125 150 175 200
0
5
10
15
20
25
30
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
(Note E)
12
10
8
1.0E+02
1.0E+01
ID=20A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
6
25°C
4
2
25°C
0
2
4
6
8
10
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: March 2011
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Page 3 of 6
AON7220
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3500
3000
2500
2000
1500
1000
500
VDS=12.5V
ID=20A
8
Ciss
6
4
Coss
2
Crss
0
0
0
5
10
15
20
25
30
35
40
45
0
5
10
VDS (Volts)
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
800
600
400
200
0
1000.0
100.0
10.0
1.0
10µs
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100µs
1ms
DC
10ms
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
PD
0.1
0.01
Ton
T
Single Pulse
0.0001
0.00001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: March 2011
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Page 4 of 6
AON7220
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000.0
100
TA=25°C
TA=100°C
80
100.0
60
TA=150°C
40
10.0
TA=125°C
20
1.0
0
1
10
100
1000
0
25
50
75
100
125
150
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
60
50
40
30
20
10
0
TA=25°C
1
0.00001
0.001
0.1
10
1000
0
25
50
75
100
125
150
Pulse Width (s)
TCASE (°C)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note F)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=55°C/W
0.1
0.01
0.001
0.0001
PD
Single Pulse
0.01
Ton
T
0.0001
0.001
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: March 2011
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Page 5 of 6
AON7220
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 0: March 2011
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Page 6 of 6
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