AON7240 [FREESCALE]
40V N-Channel MOSFET; 40V N沟道MOSFET
| 型号： | AON7240 |
| 厂家： | 
Freescale |
| 描述： | 40V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：453K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON7240
40V N-Channel MOSFET
General Description
The AON7240 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient hi
gh
frequency switching performance.Power losses are
minimized due to an extremely low combination of
DS(ON)
rss
and C
R
dy diode.
.In addition,switching behavior is well
controlled with a "Schottky style" soft recovery bo
Product Summary
VDS
40V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
40A
< 5.1mΩ
< 7mΩ
R
DS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
D
Top View
1
8
2
3
4
7
6
G
5
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
40
±20
40
V
V
VGS
TC=25°C
Continuous Drain
Current G
ID
TC=100°C
31
A
Pulsed Drain Current C
IDM
144
TA=25°C
TA=70°C
19
Continuous Drain
Current
IDSM
A
15
Avalanche Current C
IAS, IAR
40
80
A
Avalanche energy L=0.1mH C
EAS, EAR
mJ
TC=25°C
Power Dissipation B
TC=100°C
36.7
14
PD
W
TA=25°C
3.1
PDSM
W
°C
Power Dissipation A
2
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
30
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Steady-State
Steady-State
60
75
RθJC
2.8
3.4
1/6
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AON7240
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
40
V
VDS=40V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
V
DS=0V, VGS= ±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
2.4
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
1.4
1.9
144
A
4.2
6.3
5.6
67
5.1
7.6
7
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=15A
mΩ
S
VDS=5V, ID=20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current G
0.7
1
V
40
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1460 1830 2200
pF
pF
pF
Ω
V
GS=0V, VDS=20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
365
20
521
43
680
73
VGS=0V, VDS=0V, f=1MHz
0.4
0.8
1.2
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
22
10
3
27.8
12.8
3.9
6
35
15
5
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=20V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
2
10
7.2
3
VGS=10V, VDS=20V, RL=1Ω,
RGEN=3Ω
ns
tD(off)
tf
23
ns
3.5
ns
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
11
28
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
16.5
40
21
52
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be u sed if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2/6
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AON7240
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
80
60
40
20
0
10V
VDS=5V
4.5
6V
3.5V
125°C
VGS=3V
25°C
1
1.5
2
2.5
3
3.5
4
0
1
2
3
4
5
VGS(Volts)
V
DS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
8
7
6
5
4
3
2
1.8
1.6
1.4
1.2
1
VGS=10V
ID=20A
VGS=4.5V
VGS=4.5V
ID=15A
VGS=10V
0.8
0
5
10
15
20
25
30
0
25
50
75
100
125
150
175
I
D (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+02
1.0E+01
15
ID=20A
12
1.0E+00
9
6
3
0
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
2
4
6
8
10
0.0
0.2
0.4
0.6
VSD (Volts)
0.8
1.0
1.2
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
3/6
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AON7240
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2500
10
VDS=20V
ID=20A
Ciss
2000
1500
1000
500
0
8
6
4
Coss
2
Crss
0
0
5
10
15
g (nC)
20
25
30
0
10
20
DS (Volts)
30
40
Q
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
100µs
DC
1ms
10ms
TJ(Max)=150°C
TC=25°C
0.1
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
V
DS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK=TC+PDM.ZθJC.RθJC
RθJC=3.4°C/W
PD
0.1
0.01
Ton
T
Single Pulse
0.0001
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
4/6
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AON7240
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
40
35
30
TA=25°C
25
20
15
10
5
100
TA=100°C
TA=150°C
TA=125°C
10
0
1
10
100
1000
0
25
50
75
100
125
150
Time in avalanche, tA (µs)
TCASE (°C)
Figure 12: Single Pulse Avalanche capability
(Note C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
50
TA=25°C
40
30
20
10
0
1
0.00001
0.001
0.1
10
1000
0
25
50
75
100
125
150
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
θJA=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
R
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1
10
100
1000
5/6
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AON7240
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
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