AON7401_12 [AOS]
30V P-Channel MOSFET; 30V P沟道MOSFET
| 型号： | AON7401_12 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V P-Channel MOSFET |
| 文件： | 总5页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON7401
30V P-Channel MOSFET
General Description
Product Summary
VDS
-30V
The AON7401 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as a
load switch or in PWM applications.
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
-35A
< 14mΩ
< 17mΩ
R
DS(ON) (at VGS=-6V)
100% UIS Tested
100% Rg Tested
DFN 3x3_EP
D
Top View
Bottom View
Top View
1
2
3
4
8
7
6
5
G
Pin 1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-30
V
V
Gate-Source Voltage
VGS
±25
-35
TC=25°C
Continuous Drain
Current
ID
TC=100°C
A
-23
Pulsed Drain Current C
IDM
-80
TA=25°C
TA=70°C
TC=25°C
TC=100°C
TA=25°C
TA=70°C
-12
Continuous Drain
Current
IDSM
A
-9.7
29
PD
W
Power Dissipation B
Power Dissipation A
12
3.1
PDSM
W
°C
2
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
30
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Steady-State
Steady-State
60
75
RθJL
3.5
4.2
Rev 4: Mar. 2011
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Page 1 of 5
AON7401
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
VDS=-30V, VGS=0V
-1
µA
-5
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
VDS=0V, VGS= ±25V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-9A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-3
nA
V
VGS(th)
ID(ON)
-1.7
-80
-2.2
A
11
16
14
19
17
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=-6V, ID=-7A
12.9
27
mΩ
S
VDS=-5V, ID=-9A
IS=-1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
-0.7
-1
V
Maximum Body-Diode Continuous Current
-25
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2060 2600
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
370
295
VGS=0V, VDS=0V, f=1MHz
2.4
3.6
39
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
30
4.6
10
11
9.4
24
12
14
35
nC
nC
nC
ns
ns
ns
ns
VGS=-10V, VDS=-15V, ID=-9A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=-10V, VDS=-15V, RL=1.6Ω,
RGEN=3Ω
tD(off)
tf
trr
IF=-9A, dI/dt=500A/µs
IF=-9A, dI/dt=500A/µs
18
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R qJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RqJA is the sum of the thermal impedence from junction to case RqJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 4: Mar. 2011
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Page 2 of 5
AON7401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
60
40
20
0
80
60
40
20
0
VDS=-5V
-10V
-6V
-5V
-4.5V
-4V
125°C
25°C
VGS=-3.5V
1
2
3
4
5
6
0
1
2
3
4
5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
16
1.8
1.6
1.4
1.2
1
VGS=-6V
VGS=-10V
ID=-9A
14
12
10
8
VGS=-10V
VGS=-6V
ID=-7A
6
0.8
0
5
10
15
20
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
30
1.0E+01
ID=-9A
25
20
15
10
5
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
125°
25°
25°C
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 4: Mar. 2011
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Page 3 of 5
AON7401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3200
10
VDS=-15V
ID=-9A
2800
2400
2000
1600
1200
800
8
Ciss
6
4
Coss
2
400
Crss
0
0
0
5
10
15
Qg (nC)
20
25
30
0
5
10
15
20
25
30
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
10000
1000
100
10
1000.0
100.0
10.0
1.0
TA=25°
10µs
100µs
RDS(ON)
limited
1ms
10ms
100ms
10s
TJ(Max)=150°C
TA=25°C
0.1
DC
1
0.0
0.00001
0.001
0.1
10
1000
0.01
0.1
1
10
100
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
PD
0.01
0.001
Single Pulse
0.001
Ton
T
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 4: Mar. 2011
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Page 4 of 5
AON7401
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
BVDSS
Vgs
Vdd
+
VDC
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Rev 4: Mar. 2011
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Page 5 of 5
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