AON7403 [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AON7403 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON7403
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AON7403/L uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications.
AON7403 and AON7403L are electrically identical.
-RoHS Compliant
VDS (V) = -30V
ID = -8A
(VGS = -10V)
RDS(ON) < 18mΩ (VGS = -10V)
RDS(ON) < 36mΩ (VGS = -4.5V)
-AON7403L is Halogen Free
DFN 3x3
Top View
Bottom View
D
S
Pin 1
S
S
D
D
D
S
G
G
D
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
Continuous Drain
Current B,G
±25
V
TC=25°C
-20
TC=100°C
ID
-20
Pulsed Drain Current C
IDM
A
-80
TA=25°C
TA=70°C
TC=25°C
TC=100°C
TA=25°C
TA=70°C
-8
Continuous Drain
Current
IDSM
PD
-6
27
Power Dissipation B
Power Dissipation A
11
1.6
W
PDSM
1
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
30
60
4
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
75
Steady-State
Steady-State
RθJC
4.5
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON7403
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
V
DS=-30V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±25V
±100
-3
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=-250µA
-1.7
-80
-2.2
V
V
GS=-10V, VDS=-5V
GS=-10V, ID=-8A
A
14
20
18
25
36
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
mΩ
VGS=-4.5V, ID=-6A
VDS=-5V, ID=-10A
IS=-1A,VGS=0V
26
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
21
S
V
A
-0.7
-1
-3
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1130
240
155
5.8
1400
pF
pF
pF
Ω
V
GS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
8
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
18
5.5
3.3
8.7
8.5
18
7
24
nC
nC
nC
ns
ns
ns
ns
V
GS=-10V, VDS=-15V, ID=-8A
VGS=-10V, VDS=-15V, RL=1.8Ω,
GEN=3Ω
R
tD(off)
tf
trr
IF=-8A, dI/dt=500A/µs
IF=-8A, dI/dt=500A/µs
12
26
16
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device in a still air environment with TA =25°C. The power dissipation PDSM and current rating IDSM are
based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
Rev0: Jun 2008
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON7403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
60
40
20
0
VDS=-5V
-10V
-8V
60
40
20
0
-6V
-4.5V
125°C
VGS=-4V
25°C
0
1
2
3
4
5
0
1
2
3
4
5
6
-VDS (Volts)
-VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
40
35
30
25
20
15
10
1.8
1.6
1.4
1.2
1
VGS=-10V
ID=-8A
VGS=-4.5V
VGS=-4.5V
ID=-6A
`
VGS=-10V
0
5
10
15
20
0.8
0
25
50
75
100
125
150
175
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
50
40
30
20
10
10
ID=-8A
1
0.1
125°C
25°C
0.01
0.001
125°C
0.0001
25°C
0.00001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
-VSD (Volts)
-VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON7403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
8
VDS=-15V
ID=-8A
1200
900
600
300
0
Ciss
6
4
Coss
2
Crss
0
0
5
10
15
20
0
5
10
15
20
25
30
Qg (nC)
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
50
1000.0
100.0
10.0
1.0
TJ(Max)=150°C
TA=25°C
40
30
20
10
0
10µs
100µs
RDS(ON)
limited
10ms
100m
10s
TJ(Max)=150°C
TA=25°C
DC
0.1
0.0
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
1
0.1
PD
0.01
Ton
SinglePulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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