AON7405 [AOS]
30V P-Channel MOSFET; 30V P沟道MOSFET
| 型号： | AON7405 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V P-Channel MOSFET |
| 文件： | 总6页 (文件大小：252K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON7405
30V P-Channel MOSFET
General Description
Product Summary
VDS
-30V
The AON7405 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge.
This device is ideal for load switch and battery protection
applications.
ID (at VGS= -10V)
RDS(ON) (at VGS= -10V)
RDS(ON) (at VGS = -6V)
-50A
< 6.2mΩ
< 8.9mΩ
100% UIS Tested
100% Rg Tested
D
DFN 3.3x3.3 EP
Top View
Top View
Bottom
1
2
3
4
8
7
6
5
Pin 1
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
-30
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±25
TC=25°C
-50
Continuous Drain
CurrentG
ID
TC=100°C
-39
A
Pulsed Drain Current C
IDM
-210
-25
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDSM
A
-20
IAR, IAS
-44
A
EAR, EAS
97
mJ
TC=25°C
Power Dissipation B
TC=100°C
83
PD
W
33
TA=25°C
6.25
4
PDSM
W
°C
Power Dissipation A
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
16
Max
20
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Steady-State
Steady-State
45
55
RθJC
1.1
1.5
Rev 1: Feb 2010
www.aosmd.com
Page 1 of 6
AON7405
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
VDS=-30V, VGS=0V
-1
µA
-5
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
VDS=0V, VGS= ±25V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-20A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-2.8
nA
V
VGS(th)
ID(ON)
-1.7
-2.2
-210
A
5.1
7.6
6.2
9.2
8.9
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=-6V, ID=-20A
7.1
mΩ
mΩ
S
VGS=-4.5V, ID=-10A
10.7
46
VDS=-5V, ID=-20A
IS=-1A,VGS=0V
Maximum Body-Diode Continuous CurrentG
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
-0.7
-1
V
-50
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1960 2450 2940
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
380
220
7
550
370
14
720
520
28
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
33
16
5.5
7
42
21
7
51
26
8.5
17
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=-10V, VDS=-15V, ID=-20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
12
9.5
10
104
78
VGS=-10V, VDS=-15V, RL=0.75Ω,
RGEN=3Ω
ns
tD(off)
tf
ns
ns
trr
IF=-20A, dI/dt=500A/µs
IF=-20A, dI/dt=500A/µs
20
37
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
25
47
30
57
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: Feb 2010
www.aosmd.com
Page 2 of 6
AON7405
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
120
VDS=-5V
-5V
100
80
60
40
20
0
-6V,-8V,-10V
-4V
25°C
125°C
VGS=-3.5V
0
1
2
3
4
5
1
2
3
4
5
6
-VDS (Volts)
-VGS(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
9
8
7
6
5
4
3
1.8
1.6
1.4
1.2
1
VGS=-10V
ID=-20A
VGS=-6V
VGS=-6V
I =-20A
D
VGS=-10V
0.8
0
5
10
15
20
25
30
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+02
21
ID=-20A
1.0E+01
17
13
9
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
5
25°C
1
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: Feb 2010
www.aosmd.com
Page 3 of 6
AON7405
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4000
10
VDS=-15V
ID=-20A
3500
3000
2500
2000
1500
1000
500
8
Ciss
6
4
Coss
2
Crss
0
0
0
10
20
30
40
50
0
5
10
15
20
25
30
Qg (nC)
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
400
350
300
250
200
150
100
50
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
100µs
limited
1ms
DC
0.1
TJ(Max)=150°C
TC=25°C
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
0.1
0.01
PD
Ton
T
Single Pulse
0.0001
0.00001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: Feb 2010
www.aosmd.com
Page 4 of 6
AON7405
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
10
90
80
70
60
50
40
30
20
10
0
TA=25°C
TA=100°C
TA=150°C
TA=125°C
0
25
50
75
100
125
150
1
10
100
1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
T
CASE (°C)
Figure 13: Power De-rating (Note F)
60
50
40
30
20
10
10000
1000
100
10
TA=25°C
1
0
0
0.00001
0.001
0.1
10
1000
25
50
75
100
125
150
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
0.1
0.01
0.001
0.0001
PD
Single Pulse
Ton
T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1: Feb 2010
www.aosmd.com
Page 5 of 6
AON7405
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
f
td(off)
td(on)
t
r
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
BVDSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Rev 1: Feb 2010
www.aosmd.com
Page 6 of 6
相关型号：
©2020 ICPDF网 联系我们和版权申明