AOP611L [AOS]
Complementary Enhancement Mode Field Effect Transistor; 互补增强型场效应晶体管
| 型号： | AOP611L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Complementary Enhancement Mode Field Effect Transistor |
| 文件： | 总7页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOP611
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
The AOP611 uses advanced trench
technology MOSFETs to provide excellen
RDS(ON) and low gate charge. The
complementary MOSFETs may be used
in H-bridge, Inverters and other
applications.Standard Product AOP611
is Pb-free (meets ROHS & Sony 259
specifications). AOP611L is a Green
Product ordering option. AOP611 and
AOP611L are electrically identical.
n-channel
p-channel
-40V
-5.5A (VGS = -10V)
RDS(ON)
VDS (V) = 40V
ID = 6.5A (VGS=10V)
RDS(ON)
< 35mΩ (VGS=10V)
< 47mΩ (VGS=4.5V)
< 52mΩ (VGS = -10V)
< 80mΩ (VGS = -4.5V)
ESD rating: 3000V (HBM)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
D1
D2
1
2
3
4
8
7
6
5
S2
G2
S1
G1
D2
D2
D1
D1
G2
G1
S2
S1
PDIP-8
n-channel
p-channel
Max p-channel Units
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Symbol
Max n-channel
VDS
Drain-Source Voltage
40
-40
±20
V
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
Pulsed Drain CurrentB
±20
6.5
TA=25°C
TA=70°C
-5.5
A
ID
5.3
-4.4
IDM
30
-25
TA=25°C
TA=70°C
2.5
2.5
PD
W
Power Dissipation
Avalanche CurrentB
1.6
1.6
IAR
13
17
A
Repetitive avalanche energy 0.3mHB
EAR
25
43
mJ
°C
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Device
n-ch
n-ch
Typ
37
74
Max Units
50 °C/W
90 °C/W
40 °C/W
Maximum Junction-to-AmbientA
t ≤ 10s
Steady-State
Maximum Junction-to-LeadC
Steady-State
RθJA
Maximum Junction-to-AmbientA
RθJL
RθJA
RθJL
n-ch
28
Maximum Junction-to-AmbientA
p-ch
p-ch
p-ch
35
73
32
50 °C/W
90 °C/W
40 °C/W
t ≤ 10s
Maximum Junction-to-AmbientA
Steady-State
Maximum Junction-to-LeadC
Steady-State
Alpha & Omega Semiconductor, Ltd.
AOP611
N Channel Electrical Characteristics (T=25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
40
V
VDS=32V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=6.5A
1
3
mA
V
VGS(th)
ID(ON)
1
2.2
30
A
28.5
40
35
48
47
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=5A
VDS=5V, ID=6.5A
IS=1A,VGS=0V
38.5
18
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
0.76
1
Maximum Body-Diode Continuous Current
3.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
506
106
38
pF
pF
pF
Ω
VGS=0V, VDS=30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
2.6
3.9
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
8.4
4.1
1.6
2.6
4.8
2
nC
nC
nC
nC
ns
V
GS=10V, VDS=20V, ID=6.7A
Qgd
tD(on)
tr
tD(off)
tf
VGS=10V, VDS=20V, RL=3Ω,
RGEN=3Ω
ns
17
ns
2.1
17.5
11.1
ns
trr
IF=6.5A, dI/dt=100A/µs
IF=6.5A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 0: October 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOP611
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
30
25
20
15
10
5
20
15
10
5
5V
10V
VDS=5V
4.5V
4V
125°C
VGS=3.5V
25°C
-40°C
0
0
0
1
2
3
4
5
2
2.5
3
3.5
GS(Volts)
4
4.5
5
V
DS (Volts)
V
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
50
40
30
20
1.8
1.6
1.4
1.2
1
VGS=10V
ID=6.5A
VGS=4.5V
VGS=4.5V
ID=5A
VGS=10V
0.8
0.6
0
5
10
15
20
-50 -25
0
25 50 75 100 125 150 175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
70
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=6.5A
60
50
40
30
20
10
125°C
125°C
25°C
25°C
-40°C
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10
V
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOP611
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10
8
800
600
400
200
0
VDS=30V
ID= 6.5A
Ciss
6
4
Coss
Crss
2
0
0
10
20
VDS (Volts)
30
40
0
2
4
6
8
10
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100.00
10.00
1.00
40
TJ(Max)=150°C
TA=25°C
10µs
100µs
30
20
10
0
1ms
RDS(ON)
limited
10ms
0.1s
1s
10s
DC
0.10
TJ(Max)=150°C TA=25°C
0.01
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AOP611
P-Channel Electrical Characteristics (T=25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-40
V
VDS=-32V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
µA
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
±150
VGS(th)
ID(ON)
-1
-2
-3
V
A
-25
V
GS=-10V, ID=-5.5A
43
60
52
72
80
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-4.4A
VDS=-5V, ID=-5.5A
IS=-1A,VGS=0V
65
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
11
S
V
A
-0.76
-1
Maximum Body-Diode Continuous Current
-3.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1006
152
77
pF
pF
pF
Ω
VGS=0V, VDS=-20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
11
16.5
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
17.4
8.8
3.3
4.5
9.7
6.3
35.5
26
nC
nC
nC
nC
ns
V
GS=-10V, VDS=-20V, ID=-5.5A
Qgd
tD(on)
tr
tD(off)
tf
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS=-10V, VDS=-20V, RL=3.6Ω,
ns
RGEN=3Ω
ns
ns
trr
IF=-5.5A, dI/dt=100A/µs
IF=-5.5A, dI/dt=100A/µs
22
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
15.9
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The SOA curve provides a single pulse rating.
Rev 0: October 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOP611
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
25
20
15
10
5
30
25
20
15
10
5
-40°C
-10V
VDS=-5V
-5V
-4.5V
-4V
-6V
125°C
25°C
-3.5V
VGS=-3V
0
0
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
-VDS (Volts)
-VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
80
70
60
50
40
30
1.8
1.6
1.4
1.2
1
VGS=-10V
ID=-5.5A
VGS=-4.5V
VGS=-4.5V
ID=-4.4A
0.8
0.6
VGS=-10V
-50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
Temperature (°C)
-ID (A)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
90
80
70
60
50
40
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
ID=-5.5A
125°C
125°C
25°C
25°C
-40°C
2
3
4
5
6
7
8
9
10
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOP611
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10
1400
1200
1000
800
600
400
200
0
VDS=-30V
ID=-5.5A
8
Ciss
6
4
Coss
2
Crss
0
0
5
10
15
20
0
10
20
-VDS (Volts)
30
40
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.00
10.00
1.00
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
10µs
100µs
1ms
RDS(ON)
limited
10ms
0.1s
TJ(Max)=150°C
TA=25°C
DC
1s
0.10
10s
0.01
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
V
DS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
PD
0.1
Ton
T
Single Pulse
0.01
Pulse Width (s)
0.1
0.00001
0.0001
0.001
0.01
1
10
100
1000
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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