AOT11S60 [AOS]
600V 11A a MOS Power Transistor; 600V 11A的MOS功率晶体管
| 型号： | AOT11S60 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 600V 11A a MOS Power Transistor |
| 文件： | 总6页 (文件大小：297K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT11S60/AOB11S60/AOTF11S60
600V 11A
α
MOS TM Power Transistor
General Description
Product Summary
VDS @ Tj,max
IDM
700V
45A
The AOT11S60& AOB11S60 & AOTF11S60 have been
fabricated using the advanced αMOSTM high voltage
process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
RDS(ON),max
Qg,typ
0.399Ω
11nC
2.7µJ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT11S60L & AOB11S60L & AOTF11S60L
Top View
TO-220F(3kVAC;1s)
TO-263
D2PAK
TO-220
D
D
G
S
S
S
D
D
G
S
G
G
AOT11S60
AOTF11S60
AOB11S60
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT11S60/AOB11S60
AOTF11S60
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
600
V
V
VGS
±30
TC=25°C
11
8
11*
8*
Continuous Drain
Current
ID
TC=100°C
A
Pulsed Drain Current C
Avalanche Current C
IDM
IAR
45
2
A
mJ
Repetitive avalanche energy C
Single pulsed avalanche energy G
TC=25°C
EAR
EAS
60
120
mJ
W
W/ oC
178
38
PD
Power Dissipation B
Derate above 25oC
1.4
100
20
0.3
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
dv/dt
V/ns
°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
TL
300
°C
Parameter
Symbol
AOT11S60/AOB11S60
AOTF11S60
Units
Maximum Junction-to-Ambient A,D
RθJA
65
65
°C/W
Maximum Case-to-sink A
RθCS
RθJC
0.5
0.7
--
°C/W
°C/W
Maximum Junction-to-Case
3.25
* Drain current limited by maximum junction temperature.
Rev 5: Sep 2012
www.aosmd.com
Page 1 of 6
AOT11S60/AOB11S60/AOTF11S60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
-
STATIC PARAMETERS
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
VDS=600V, VGS=0V
600
-
700
-
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
650
-
1
V
-
IDSS
µA
VDS=480V, TJ=150°C
-
10
-
-
IGSS
VDS=0V, VGS=±30V
Gate-Body leakage current
Gate Threshold Voltage
-
±100
4.1
nΑ
V
VGS(th)
VDS=5V, ID=250µA
2.8
3.5
VGS=10V, ID=3.8A, TJ=25°C
-
-
-
-
-
0.35 0.399
Ω
Ω
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=3.8A, TJ=150°C
0.98
1.11
-
IS=5.5A,VGS=0V, TJ=25°C
VSD
IS
Diode Forward Voltage
0.84
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed CurrentC
-
-
11
45
A
ISM
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
-
-
545
-
-
pF
pF
VGS=0V, VDS=100V, f=1MHz
Coss
37.3
Effective output capacitance, energy
related H
Co(er)
Co(tr)
-
-
30.8
93.6
-
-
pF
pF
VGS=0V, VDS=0 to 480V, f=1MHz
Effective output capacitance, time
related I
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Crss
Rg
Reverse Transfer Capacitance
Gate resistance
-
-
1.42
16.5
-
-
pF
Ω
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
-
-
-
-
-
-
-
-
-
-
11
2.8
3.8
20
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=480V, ID=5.5A
VGS=10V, VDS=400V, ID=5.5A,
20
RG=25Ω
tD(off)
tf
59
20
trr
IF=5.5A,dI/dt=100A/µs,VDS=400V
IF=5.5A,dI/dt=100A/µs,VDS=400V
IF=5.5A,dI/dt=100A/µs,VDS=400V
250
21
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
ns
A
Irm
Qrr
3.3
µC
Body Diode Reverse Recovery Charge
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=2A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 5: Sep 2012
www.aosmd.com
Page 2 of 6
AOT11S60/AOB11S60/AOTF11S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
16
24
10V
10V
20
16
12
7V
12
7V
6V
6V
8
5.5V
5.5V
5V
8
4
0
4
5V
VGS=4.5V
VGS=4.5V
15 20
0
0
5
10
DS (Volts)
0
5
10
15
20
V
VDS (Volts)
Figure 2: On-Region Characteristics@125°C
Figure 1: On-Region Characteristics@25°C
100
10
1.2
0.9
0.6
0.3
0.0
-55°C
VDS=20V
125°C
VGS=10V
1
25°C
0.1
0.01
0
5
10
15
ID (A)
20
25
2
4
6
8
10
VGS(Volts)
Figure 3: Transfer Characteristics
Figure 4: On-Resistance vs. Drain Current and
Gate Voltage
1.2
1.1
1
3
2.5
2
VGS=10V
ID=3.8A
1.5
1
0.9
0.8
0.5
0
-100
-50
0
50
100
150
200
-100
-50
0
50
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
100
150
200
TJ (oC)
Figure 6: Break Down vs. Junction Temperature
Rev 5: Sep 2012
www.aosmd.com
Page 3 of 6
AOT11S60/AOB11S60/AOTF11S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
1.0E+02
1.0E+01
125°C
12
VDS=480V
ID=5.5A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
9
6
3
0
25°C
0.0
0.2
0.4
0.6
0.8
1.0
0
4
8
12
16
VSD (Volts)
Qg (nC)
Figure 7: Body-Diode Characteristics (Note E)
Figure 8: Gate-Charge Characteristics
10000
1000
100
6
5
4
3
2
1
0
Ciss
Eoss
Coss
10
Crss
1
0
0
100
200
VDS (Volts)
Figure 10: Coss stored Energy
300
400
500
600
100
200
300
400
500
600
VDS (Volts)
Figure 9: Capacitance Characteristics
100
10
100
10µs
RDS(ON)
limited
RDS(ON)
10µs
10
1
limited
100µs
100µs
1
DC
1ms
10ms
0.1s
1s
1ms
10ms
DC
0.1
0.01
0.1
0.01
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
1
10
100
1000
0.1
1
10
100
1000
VDS (Volts)
VDS (Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT(B)11S60 (Note F)
Figure 12: Maximum Forward Biased Safe
Operating Area for AOTF11S60(Note F)
Rev 5: Sep 2012
www.aosmd.com
Page 4 of 6
AOT11S60/AOB11S60/AOTF11S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
90
60
30
0
12
9
6
3
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
TCASE (°C)
TCASE (°C)
Figure 13: Avalanche energy
Figure 14: Current De-rating (Note B)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
1
0.1
RθJC=0.7°C/W
PD
0.01
0.001
Ton
T
Single Pulse
0.0001
0.000001
0.00001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for AOT(B)11S60 (Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
θJC=3.25°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
0.1
PD
0.01
0.001
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for AOTF11S60 (Note F)
Rev 5: Sep 2012
www.aosmd.com
Page 5 of 6
AOT11S60/AOB11S60/AOTF11S60
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit& Waveforms
L
2
EAR=1/2LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit &Waveforms
Qrr =- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Rev 5: Sep 2012
www.aosmd.com
Page 6 of 6
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