AOT12N30 [AOS]
300V,11.5A N-Channel MOSFET; 300V ， 11.5A N沟道MOSFET
| 型号： | AOT12N30 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 300V,11.5A N-Channel MOSFET |
| 文件： | 总6页 (文件大小：330K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT12N30/AOTF12N30
300V,11.5A N-Channel MOSFET
General Description
Product Summary
VDS
350V@150℃
11.5A
The AOT12N30/AOTF12N30 is fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.By providing low RDS(on), Ciss
and Crss along with guaranteed avalanche capability this
parts can be adopted quickly into new and existing offline
power supply designs.These parts are ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 0.42Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT12N30L/AOTF12N30L
Top View
TO-220
TO-220F
D
G
S
S
D
D
S
G
G
AOT12N30
AOTF12N30
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
AOT12N30
AOTF12N30
Units
Drain-Source Voltage
Gate-Source Voltage
300
±30
V
V
VGS
TC=25°C
11.5
7.3
11.5*
7.3*
Continuous Drain
Current
ID
TC=100°C
A
Pulsed Drain Current C
IDM
29
3.8
430
5
Avalanche Current C
IAS
A
Single pulsed avalanche energy G
Peak diode recovery dv/dt
TC=25°C
EAS
dv/dt
mJ
V/ns
W
W/ oC
132
1
36
PD
Power Dissipation B
Derate above 25oC
0.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
300
°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TL
°C
Parameter
Symbol
RθJA
AOT12N30
AOTF12N30
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A,D
65
0.5
65
--
Maximum Case-to-sink A
RθCS
Maximum Junction-to-Case
RθJC
0.95
3.5
Rev 1: Nov 2011
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Page 1 of 6
AOT12N30/AOTF12N30
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250ꢀA, VGS=0V, TJ=25°C
ID=250ꢀA, VGS=0V, TJ=150°C
300
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
350
V
BVDSS
/∆TJ
V/ oC
ID=250ꢀA, VGS=0V
0.29
VDS=300V, VGS=0V
VDS=240V, TJ=125°C
1
IDSS
µA
10
IGSS
VGS(th)
RDS(ON)
gFS
VDS=0V, VGS=±30V
Gate-Body leakage current
Gate Threshold Voltage
±100
4.5
nΑ
V
VDS=5V ID=250µA
VGS=10V, ID=6A
VDS=40V, ID=6A
IS=1A,VGS=0V
3.4
4
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
0.31
11
0.42
Ω
S
VSD
0.74
1
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
11.5
29
A
ISM
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
500
55
3
632
90
7
790
125
11
pF
pF
pF
Ω
V
GS=0V, VDS=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
1.3
2.7
4.1
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
10
12.8
4.4
4.3
18
16
nC
nC
nC
ns
ns
ns
VGS=10V, VDS=240V, ID=12A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
VGS=10V, VDS=150V, ID=12A,
Turn-On Rise Time
31
RG=25Ω
D(off)
tf
Turn-Off Fall Time
20
trr
IF=12A,dI/dt=100A/µs,VDS=100V
IF=12A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
130
1
170
1.3
205
1.6
ns
Qrr
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.8A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: Nov 2011
www.aosmd.com
Page 2 of 6
AOT12N30/AOTF12N30
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10
1
20
VDS=40V
-55°C
10V
16
6.5V
12
125°C
8
6V
4
25°C
VGS=5.5V
0
0.1
0
5
10
15
20
25
30
0
2
4
6
8
10
VDS (Volts)
Fig 1: On-Region Characteristics
VGS(Volts)
Figure 2: Transfer Characteristics
1.5
3
2.5
2
VGS=10V
ID=6A
1.2
0.9
0.6
0.3
0.0
VGS=10V
1.5
1
0.5
0
-100
-50
0
50
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
150
200
0
5
10
15
ID (A)
20
25
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1.1
1
1.0E+02
1.0E+01
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
25°C
0.9
0.8
-100
-50
0
50
100
150
200
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
TJ (°C)
Figure 6: Body-Diode Characteristics (Note E)
Figure 5:Break Down vs. Junction Temparature
Rev 1: Nov 2011
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Page 3 of 6
AOT12N30/AOTF12N30
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
15
12
9
VDS=240V
ID=12A
Ciss
1000
100
10
6
Coss
3
Crss
10
0
1
0
4
8
12
16
20
0.1
1
100
Qg (nC)
VDS (Volts)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100
10
100
10
10µs
10µs
RDS(ON)
limited
RDS(ON)
limited
100µs
100µs
1
1
1ms
1ms
DC
DC
10ms
1s
10ms
0.1
0.01
0.1
0.01
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
1
10
100
1000
1
10
100
1000
VDS (Volts)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT12N30 (Note F)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF12N30 (Note F)
12
9
6
3
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 11: Current De-rating (Note B)
Rev 1: Nov 2011
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Page 4 of 6
AOT12N30/AOTF12N30
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
R
θJC=0.95°C/W
1
0.1
PD
0.01
0.001
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT12N30 (Note F)
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
θJC=3.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
1
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF12N30 (Note F)
Rev 1: Nov 2011
www.aosmd.com
Page 5 of 6
AOT12N30/AOTF12N30
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit& Waveforms
L
2
EAR=1/2LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit &Waveforms
Qrr =- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Rev 1: Nov 2011
www.aosmd.com
Page 6 of 6
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