AOT402 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOT402 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT402
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOT402 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
Standard Product AOT402 is Pb-free (meets ROHS &
Sony 259 specifications). AOT402L is a Green
Product ordering option. AOT402 and AOT402L are
electrically identical.
VDS (V) = 105V
ID = 110 A
(VGS = 10V)
RDS(ON) < 8.6 mΩ (VGS = 10V) @ ID = 30A
RDS(ON) < 10 mΩ (VGS = 6V)
TO-220
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
105
V
VGS
Gate-Source Voltage
Continuous Drain
Current G
±25
110
V
A
TC=25°C
TC=100°C
ID
85
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
IDM
IAR
EAR
200
100
A
540
mJ
TC=25°C
Power Dissipation B
TC=100°C
300
PD
W
150
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Symbol
RθJA
Typ
Max
Units
Steady-State
Steady-State
47
60
°C/W
°C/W
RθJC
0.25
0.5
Alpha & Omega Semiconductor, Ltd.
AOT402
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=10mA, VGS=0V
VDS=84V, VGS=0V
105
V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±25V
100
4
nA
V
VGS(th)
ID(ON)
VDS=VGS, ID=250µA
2
3.3
VGS=10V, VDS=5V
200
A
V
GS=10V, ID=30A
6.9
12.8
7.9
88
8.6
15
10
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=6V, ID=30A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=30A
IS=1A, VGS=0V
S
V
A
0.7
1
Maximum Body-Diode Continuous Current
110
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
7.7
820
300
1.25
10
nF
pF
pF
Ω
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
2
SWITCHING PARAMETERS
Qg(10V)
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
182
54
230
nC
nC
nC
ns
ns
ns
ns
V
GS=10V, VDS=25V, ID=30A
44
30.5
42.5
66
VGS=10V, VDS=25V, RL=0.75Ω,
R
GEN=3Ω
tD(off)
tf
16
trr
IF=30A, dI/dt=100A/µs
IF=30A, dI/dt=100A/µs
86
115
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
375
nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev0: Sept. 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOT402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
175
150
80
10V
6V
VDS=5V
60
5V
125
100
40
75
4.5V
50
25
0
20
0
125°C
3
VGS=4V
4
25°C
0
1
2
3
5
0
1
2
4
5
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
10
9
2.4
2.2
2
VGS=6V
VGS=10V
ID=30A
8
1.8
1.6
1.4
1.2
1
7
VGS=6V
ID=30A
6
VGS=10V
5
4
0.8
0
20
40
60
80
100
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
18
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
ID=30A
16
14
12
10
8
125°C
125°C
25°C
25°C
6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
4
8
12
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
16
20
V
SD (Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AOT402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
12000
10000
8000
6000
4000
2000
0
VDS=25V
ID=30A
8
Ciss
6
4
Coss
2
Crss
0
0
20
40
60
80
100
0
25
50
75
100 125 150 175 200
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
1000
800
600
400
200
TJ(Max)=175°C, TA=25°C
10µs
TJ(Max)=175°C
TA=25°C
RDS(ON)
limited
100µs
10ms
DC
0.1
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
1000
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-
to-Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
RθJC=0.5°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOT402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
350
300
250
200
150
100
50
120
100
80
60
40
20
0
T=25°C
T=150°C
0
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
0.01
0
25
50
75
CASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
T
120
100
80
60
40
20
0
0
25
50
75
CASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
T
Alpha & Omega Semiconductor, Ltd.
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