AOT8N50 [AOS]
500V, 8A N-Channel MOSFET; 500V ， 8A N沟道MOSFET
| 型号： | AOT8N50 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 500V, 8A N-Channel MOSFET |
| 文件： | 总6页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT8N50/AOTF8N50
500V, 8A N-Channel MOSFET
General Description
Features
The AOT8N50 & AOTF8N50 have been fabricated
using an advanced high voltage MOSFET process that
is designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power
supply designs.
VDS (V) = 600V @ 150°C
ID = 8A
(VGS = 10V)
RDS(ON) < 0.85Ω
100% UIS Tested!
100% R g Tested!
Top View
TO-220F
TO-220
D
G
G
G
D
D
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT8N50
AOTF8N50
Units
VDS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage
±30
V
A
TC=25°C
8
8*
5.6*
Continuous Drain
Current
Pulsed Drain Current C
Avalanche Current C, G
ID
TC=100°C
5.6
IDM
30
3.2
154
307
5
IAR
A
Repetitive avalanche energy C, G
EAR
EAS
dv/dt
mJ
G
Single pulsed avalanche energy
Peak diode recovery dv/dt
TC=25°C
mJ
V/ns
W
W/ oC
176
1.4
38.5
0.3
PD
Power Dissipation B
Derate above 25oC
TJ, TSTG
Junction and Storage Temperature Range
-50 to 150
300
°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TL
°C
Parameter
Maximum Junction-to-Ambient A,D
Symbol
RθJA
AOT8N50
AOTF8N50
Units
65
65
°C/W
Maximum Case-to-Sink A
Maximum Junction-to-Case
--
°C/W
°C/W
RθCS
0.5
RθJC
0.71
3.25
* Drain current limited by maximum junction temperature.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT8N50/AOTF8N50
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
500
V
V
BVDSS
Drain-Source Breakdown Voltage
600
BVDSS
Breakdown Voltage Temperature
Coefficient
V/ oC
ID=250µA, VGS=0V
/∆TJ
0.56
VDS=500V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
10
V
DS=400V, TJ=125°C
VDS=0V, VGS=±30V
DS=VGS, ID=250µA
IGSS
VGS(th)
RDS(ON)
gFS
Gate-Body leakage current
Gate Threshold Voltage
±100
4.6
nA
V
V
3.4
4
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=10V, ID=4A
VDS=40V, ID=4A
IS=1A, VGS=0V
0.63
10
0.85
Ω
S
VSD
0.73
1
8
V
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
IS
A
ISM
30
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
694
74
6.2
2
868
93
7.8
4
1042
112
9.4
pF
pF
pF
Ω
VGS=0V, VDS=25V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
6.0
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
23.6
5.2
28.3
6.2
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=400V, ID=8A
10.6
19.5
47
12.7
323
56.4
62.0
46.0
VGS=10V, VDS=250V, ID=8A,
RG=25Ω
tD(off)
tf
51.5
38.5
206
2.14
trr
IF=8A,dI/dt=100A/µs,VDS=100V
IF=8A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
247.0
2.6
ns
Qrr
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.2A, VDD=50V, RG=25Ω, Starting TJ=25°C
Rev 3.
Dec-08
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT8N50/AOTF8N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
16
100
10V
VDS=40V
14
12
10
8
-55°C
6.5V
10
1
6V
125°C
6
VGS=5.5V
4
25°C
2
0.1
0
0
5
10
15
20
25
30
2
4
6
8
10
VDS (Volts)
V
GS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
0.4
3
2.5
2
VGS=10V
ID=4A
VGS=10V
1.5
1
0.5
0
0
2
4
6
8
10 12 14 16 18
D (A)
-100
-50
0
50
100
150
200
I
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.2
1.1
1
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
0.9
0.8
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
-100
-50
0
50
100
150
200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT8N50/AOTF8N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
1000
100
10
VDS=400V
ID=8A
Ciss
Coss
6
3
Crss
0
1
0
5
10
15
Q
20
g (nC)
Figure 7: Gate-Charge Characteristics
25
30
35
0.1
1
10
100
VDS (Volts)
Figure 8: Capacitance Characteristics
100
100
10
1
10µs
10µs
10
1
RDS(ON)
limited
RDS(ON)
limited
100µs
100µs
1ms
10ms
0.1s
DC
1ms
10ms
0.1s
1s
DC
0.1
0.01
0.1
10s
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
0.01
1
1
10
100
1000
10
100
1000
VDS (Volts)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT8N50 (Note F)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF8N50 (Note F)
10
8
6
4
2
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 11: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT8N50/AOTF8N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJC.RθJC
RθJC=0.71°C/W
1
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT8N50 (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJC.RθJC
RθJC=3.25°C/W
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.001
0.00001
0.0001
0.01
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF8N50 (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT8N50/AOTF8N50
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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