AOT8N65 [FREESCALE]
600V,8A N-Channel MOSFET; 600V ， 8A N沟道MOSFET
| 型号： | AOT8N65 |
| 厂家： | 
Freescale |
| 描述： | 600V,8A N-Channel MOSFET |
| 文件： | 总6页 (文件大小：464K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT8N65/AOTF8N65
600V,8A N-Channel MOSFET
General Description
an advanced high voltage MOSFET process that is
The AOT8N65 & AOTF8N65 have been fabricated using
designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
Features
VDS
750V@150℃
8A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 1.15Ω
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
AOT8N65
AOTF8N65
Units
Drain-Source Voltage
Gate-Source Voltage
650
±30
V
V
VGS
TC=25°C
8
8*
Continuous Drain
Current
ID
TC=100°C
5.2
5.2*
A
Pulsed Drain Current C
IDM
32
3.4
173
347
5
Avalanche Current C
IAR
A
Repetitive avalanche energy C
EAR
EAS
dv/dt
mJ
Single plused avalanche energy G
Peak diode recovery dv/dt
TC=25°C
mJ
V/ns
W
W/ oC
208
50.0
0.3
PD
Power Dissipation B
Derate above 25oC
1.67
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
°C
°C
Parameter
Symbol
RθJA
AOT8N65
AOTF8N65
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A,D
65
0.5
0.6
65
--
Maximum Case-to-sink A
RθCS
Maximum Junction-to-Case
RθJC
2.5
* Drain current limited by maximum junction temperature.
1/6
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AOT8N65/AOTF8N65
600V,8A N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250ꢀA, VGS=0V, TJ=25°C
ID=250ꢀA, VGS=0V, TJ=150°C
650
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
750
0.7
V
BVDSS
V/ oC
/∆TJ
ID=250ꢀA, VGS=0V
VDS=650V, VGS=0V
1
IDSS
µA
VDS=520V, TJ=125°C
VDS=0V, VGS=±30V
VDS=5V ID=250µA
VGS=10V, ID=4A
VDS=40V, ID=4A
IS=1A,VGS=0V
10
IGSS
VGS(th)
RDS(ON)
gFS
Gate-Body leakage current
Gate Threshold Voltage
±100
4.5
nΑ
V
3
4
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
0.91
11
1.15
Ω
S
VSD
0.74
1
8
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
A
ISM
32
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
930
80
7
1165
101
9
1400
120
11
pF
pF
pF
Ω
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
1.8
3.7
5.6
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
18.5
5
23.5
6.2
9.5
26
28
7.5
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=520V, ID=8A
7.5
11.5
51
VGS=10V, VDS=325V, ID=8A, RG=25Ω
tD(off)
tf
65
43
trr
IF=8A,dI/dt=100A/µs,VDS=100V
IF=8A,dI/dt=100A/µs,VDS=100V
235
4
295
5
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
355
6
ns
Qrr
ꢀC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=3.3A, VDD=150V, RG=25Ω, Starting TJ=25°C
2/6
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AOT8N65/AOTF8N65
600V,8A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
14
12
10
8
100
10
1
10V
6.5V
6V
-55°C
VDS=40V
125°C
6
4
25°C
VGS=5.5V
2
0.1
0
2
4
6
8
10
0
5
10
15
VDS (Volts)
20
25
30
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
1.8
1.5
1.2
0.9
0.6
0.3
3
2.5
2
VGS=10V
ID=4A
VGS=10V
1.5
1
0.5
0
2
4
6
8
10
12
14
16
0
-100
-50
0
50
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
150
200
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.0E+02
1.2
1.1
1
1.0E+01
1.0E+00
1.0E-01
1.0E-02
125°C
25°C
1.0E-03
1.0E-04
1.0E-05
0.9
0.8
-100
-50
0
50
100
150
200
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
3/6
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AOT8N65/AOTF8N65
600V,8A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
1000
100
10
Ciss
VDS=520V
ID=8A
Coss
6
3
Crss
1
0
0.1
1
10
100
0
5
10
15
Q
20
g (nC)
Figure 7: Gate-Charge Characteristics
25
30
35
VDS (Volts)
Figure 8: Capacitance Characteristics
100
10
100
10µs
10µs
100µ
10
1
RDS(ON)
limited
RDS(ON)
limited
100µs
1ms
1ms
1
10ms
10ms
0.1s
1s
DC
DC
0.1
0.01
0.1
0.01
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
1
10
100
1000
1
10
100
1000
VDS (Volts)
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF8N65 (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT8N65 (Note F)
10
8
6
4
2
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 11: Current De-rating (Note B)
4/6
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AOT8N65/AOTF8N65
600V,8A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=Tc+PDM.ZθJC.RθJC
RθJC=0.6°C/W
1
0.1
PD
Ton
0.01
0.001
T
Single Pulse
0.001
0.00001
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT8N65 (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=Tc+PDM.ZθJC.RθJC
RθJC=2.5°C/W
0.1
PD
0.01
0.001
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.01
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF8N65 (Note F)
0.1
1
10
100
5/6
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AOT8N65/AOTF8N65
600V,8A N-Channel MOSFET
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR=1/2 LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTestCircuit &Waveforms
Qrr=- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
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