AOT8N80 [AOS]
800V, 7.4A N-Channel MOSFET; 800V ， 7.4A N沟道MOSFET
| 型号： | AOT8N80 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 800V, 7.4A N-Channel MOSFET |
| 文件： | 总6页 (文件大小：354K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT8N80/AOTF8N80
800V, 7.4A N-Channel MOSFET
General Description
Product Summary
VDS
900V@150℃
7.4A
The AOT8N80 & AOTF8N80 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.By providing
low RDS(on), Ciss and Crss along with guaranteed avalanche
capability these parts can be adopted quickly into new and
existing offline power supply designs.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 1.63Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT8N80L & AOTF8N80L
Top View
D
TO-220
TO-220F
G
S
D
S
S
D
G
G
AOT8N80
AOTF8N80
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT8N80
AOTF8N80
Units
Drain-Source Voltage
VDS
800
±30
V
Gate-Source Voltage
VGS
V
A
TC=25°C
7.4
4.6
7.4*
4.6*
Continuous Drain
Current
ID
TC=100°C
Pulsed Drain Current C
Avalanche Current C
IDM
26
3.8
217
433
5
IAR
A
Repetitive avalanche energy C
EAR
EAS
dv/dt
mJ
Single pulsed avalanche energy G
Peak diode recovery dv/dt
TC=25°C
mJ
V/ns
W
W/ oC
245
2.0
50
PD
Power Dissipation B
Derate above 25oC
0.4
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
300
°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TL
°C
Parameter
Symbol
RθJA
AOT8N80
AOTF8N80
Units
Maximum Junction-to-Ambient A,D
65
65
°C/W
Maximum Case-to-sink A
RθCS
0.5
--
°C/W
°C/W
Maximum Junction-to-Case
RθJC
0.51
2.5
* Drain current limited by maximum junction temperature.
Rev0: Jun 2012
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Page 1 of 6
AOT8N80/AOTF8N80
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250ꢀA, VGS=0V, TJ=25°C
ID=250ꢀA, VGS=0V, TJ=150°C
800
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
900
V
BVDSS
/∆TJ
V/ oC
ID=250ꢀA, VGS=0V
0.86
VDS=800V, VGS=0V
VDS=640V, TJ=125°C
1
IDSS
µA
10
IGSS
VGS(th)
RDS(ON)
gFS
VDS=0V, VGS=±30V
Gate-Body leakage current
Gate Threshold Voltage
±100
4.5
nΑ
V
VDS=5V, ID=250µA
VGS=10V, ID=4A
VDS=40V, ID=4A
IS=1A,VGS=0V
3.3
3.9
1.35
9
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
1.63
Ω
S
VSD
0.72
1
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
7.4
26
A
ISM
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1100 1375 1650
pF
pF
pF
Ω
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
70
6
101
11
132
16
1.7
3.5
5.3
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
20
26
7.3
9.1
35
51
69
41
484
6
32
nC
nC
nC
ns
ns
ns
ns
V
GS=10V, VDS=640V, ID=8A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
VGS=10V, VDS=400V, ID=8A,
Turn-On Rise Time
G
tD(off)
tf
Turn-Off DelayTime
Turn-Off Fall Time
trr
IF=8A,dI/dt=100A/µs,VDS=100V
IF=8A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
380
4.5
585
7.5
ns
Qrr
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.8A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Jun 2012
www.aosmd.com
Page 2 of 6
AOT8N80/AOTF8N80
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
100
10V
VDS=40V
-55°C
12
9
6.5V
10
1
125°C
6V
5.5V
6
3
25°C
VGS=5V
25
0
0.1
0
5
10
15
20
30
2
4
6
8
10
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
3
2.5
2
VGS=10V
VGS=10V
1.5
1
0.5
0
-100
-50
0
50
100
150
200
0
2
4
6
8
10
12
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1.1
1
1E+02
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
125°C
25°C
0.9
0.8
-100
-50
0
50
100
150
200
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
TJ (°C)
Figure 5: Break Down vs. Junction Temparature
Rev0: Jun 2012
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Page 3 of 6
AOT8N80/AOTF8N80
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
1000
100
10
VDS=640V
ID=8A
Ciss
Coss
6
Crss
3
0
1
0
8
16
Qg (nC)
Figure 7: Gate-Charge Characteristics
24
32
40
0.1
1
10
100
VDS (Volts)
Figure 8: Capacitance Characteristics
100
10
100
10
10µs
10µs
RDS(ON)
limited
RDS(ON)
limited
100µs
100µs
1ms
1
1
1ms
DC
10ms
10ms
DC
0.1s
1s
0.1
0.01
0.1
0.01
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
1
10
100
1000
1
10
100
1000
VDS (Volts)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT8N80 (Note F)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF8N80 (Note F)
10
8
6
4
2
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 11: Current De-rating (Note B)
Rev0: Jun 2012
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Page 4 of 6
AOT8N80/AOTF8N80
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=0.51°C/W
1
0.1
PD
Single Pulse
0.0001
0.01
0.001
Ton
T
0.000001
0.00001
0.001
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT8N80 (Note F)
0.01
0.1
1
10
100
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
θJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
1
0.1
PD
Single Pulse
0.01
Ton
T
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF8N80 (Note F)
Rev0: Jun 2012
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Page 5 of 6
AOT8N80/AOTF8N80
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR=1/2 LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTestCircuit &Waveforms
Qrr=- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Rev0: Jun 2012
www.aosmd.com
Page 6 of 6
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