AOTF10N65 [AOS]
650V,10A N-Channel MOSFET; 650V ， 10A的N沟道MOSFET
| 型号： | AOTF10N65 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 650V,10A N-Channel MOSFET |
| 文件： | 总6页 (文件大小：214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT10N65/AOTF10N65
650V,10A N-Channel MOSFET
General Description
Product Summary
ꢀꢀꢀVDS
750V@150℃
10A
TheꢀꢀAOT10N65ꢀ&ꢀAOTF10N65ꢀhaveꢀbeenꢀfabricated
usingꢀanꢀadvancedꢀhighꢀvoltageꢀMOSFETꢀprocessꢀthatꢀis
designedꢀtoꢀdeliverꢀhighꢀlevelsꢀofꢀperformanceꢀand
robustnessꢀinꢀpopularꢀACꢁDCꢀapplications.
ByꢀprovidingꢀlowꢀRDS(on),ꢀCissꢀandꢀCrssꢀalongꢀwith
guaranteedꢀavalancheꢀcapabilityꢀtheseꢀpartsꢀcanꢀbe
adoptedꢀquicklyꢀintoꢀnewꢀandꢀexistingꢀofflineꢀpowerꢀsupply
designs.
ꢀꢀꢀIDꢀꢀ(atꢀVGS=10V)
ꢀꢀꢀRDS(ON)ꢀ(atꢀVGS=10V)
<ꢀ1Ω
100%ꢀUISꢀTested
100%ꢀꢀRgꢀTested
ꢀꢀꢀForꢀHalogenꢀFreeꢀaddꢀ"L"ꢀsuffixꢀtoꢀpartꢀnumber:ꢀ
ꢀꢀꢀAOT10N65Lꢀ&ꢀAOTF10N65L
TopꢀView
TO-220F
TO-220
D
G
G
G
D
D
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
AOT10N65
AOTF10N65
Units
DrainꢁSourceꢀVoltage
GateꢁSourceꢀVoltage
650
±30
V
V
VGS
TC=25°C
10
10*
ContinuousꢀDrain
Current
ID
TC=100°C
6.2
6.2*
A
PulsedꢀDrainꢀCurrentꢀC
IDM
36
3.4
173
347
5
AvalancheꢀCurrentꢀC
IAR
A
RepetitiveꢀavalancheꢀenergyꢀC
EAR
EAS
dv/dt
mJ
SingleꢀpulsedꢀavalancheꢀenergyꢀG
Peakꢀdiodeꢀrecoveryꢀdv/dt
TC=25°C
mJ
V/ns
W
W/ꢀoC
250
2
50
PD
PowerꢀDissipationꢀB
Derateꢀaboveꢀ25oC
0.4
JunctionꢀandꢀStorageꢀTemperatureꢀRange
Maximumꢀleadꢀtemperatureꢀforꢀsoldering
purpose,ꢀ1/8"ꢀfromꢀcaseꢀforꢀ5ꢀseconds
Thermal Characteristics
TJ,ꢀTSTG
TL
ꢁ55ꢀtoꢀ150
300
°C
°C
Parameter
Symbol
RθJA
AOT10N65
AOTF10N65
Units
°C/W
°C/W
°C/W
MaximumꢀJunctionꢁtoꢁAmbientꢀA,D
65
0.5
0.5
65
ꢁꢁ
MaximumꢀCaseꢁtoꢁsinkꢀA
RθCS
MaximumꢀJunctionꢁtoꢁCase
RθJC
2.5
*ꢀDrainꢀcurrentꢀlimitedꢀbyꢀmaximumꢀjunctionꢀtemperature.
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀRev3:Marchꢀ2011ꢀ
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AOT10N65/AOTF10N65
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250ꢂA,ꢀVGS=0V,ꢀTJ=25°C
ID=250ꢂA,ꢀVGS=0V,ꢀTJ=150°C
650
BVDSS
DrainꢁSourceꢀBreakdownꢀVoltage
ZeroꢀGateꢀVoltageꢀDrainꢀCurrent
ZeroꢀGateꢀVoltageꢀDrainꢀCurrent
750
V
BVDSS
/∆TJ
V/ꢀoC
ID=250ꢂA,ꢀVGS=0Vꢀꢀ
VDS=650V,ꢀVGS=0V
0.75
1
10
IDSS
µA
VDS=520V,ꢀTJ=125°C
VDS=0V,ꢀVGS=±30V
VDS=5V,ꢀID=250µA
VGS=10V,ꢀID=5A
VDS=40V,ꢀID=5A
IS=1A,VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
GateꢁBodyꢀleakageꢀcurrent
GateꢀThresholdꢀVoltage
±100
4.5
1
nΑ
V
3
4
StaticꢀDrainꢁSourceꢀOnꢁResistance
ForwardꢀTransconductance
DiodeꢀForwardꢀVoltage
0.77
13
Ω
S
VSD
0.73
1
V
IS
MaximumꢀBodyꢁDiodeꢀContinuousꢀCurrent
MaximumꢀBodyꢁDiodeꢀPulsedꢀCurrent
10
36
A
ISM
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
InputꢀCapacitance
1095 1369 1645
pF
pF
pF
Ω
VGS=0V,ꢀVDS=25V,ꢀf=1MHz
GS=0V,ꢀVDS=0V,ꢀf=1MHz
OutputꢀCapacitance
ReverseꢀTransferꢀCapacitance
Gateꢀresistance
95
8
118
10
145
12
V
1.7
3.5
5.5
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
TotalꢀGateꢀCharge
GateꢀSourceꢀCharge
GateꢀDrainꢀCharge
TurnꢁOnꢀDelayTime
TurnꢁOnꢀRiseꢀTime
TurnꢁOffꢀDelayTime
TurnꢁOffꢀFallꢀTime
22
6
27.7
7.4
11.3
30
33
9
nC
nC
nC
ns
ns
ns
ns
VGS=10V,ꢀVDS=520V,ꢀID=10A
9
14
VGS=10V,ꢀVDS=325V,ꢀID=10A,
61
RG=25Ω
tD(off)
tf
74
53
trr
IF=10A,dI/dt=100A/µs,VDS=100V
IF=10A,dI/dt=100A/µs,VDS=100V
255
4.8
320
6
BodyꢀDiodeꢀReverseꢀRecoveryꢀTime
BodyꢀDiodeꢀReverseꢀRecoveryꢀCharge
385
7.2
ns
Qrr
ꢂC
A.ꢀTheꢀvalueꢀofꢀRꢀθJAꢀisꢀmeasuredꢀwithꢀtheꢀdeviceꢀinꢀaꢀstillꢀairꢀenvironmentꢀwithꢀT =25°C.
ꢀAꢀ
B.ꢀTheꢀpowerꢀdissipationꢀP ꢀisꢀbasedꢀonꢀTJ(MAX)=150°C,ꢀusingꢀjunctionꢁtoꢁcaseꢀthermalꢀresistance,ꢀandꢀisꢀmoreꢀusefulꢀinꢀsettingꢀtheꢀupperꢀdissipation
D
limitꢀforꢀcasesꢀwhereꢀadditionalꢀheatsinkingꢀisꢀused.
C.ꢀRepetitiveꢀrating,ꢀpulseꢀwidthꢀlimitedꢀbyꢀjunctionꢀtemperatureꢀTJ(MAX)=150°C,ꢀRatingsꢀareꢀbasedꢀonꢀlowꢀfrequencyꢀandꢀdutyꢀcyclesꢀtoꢀkeepꢀinitialꢀT
J
=25°C.
D.ꢀTheꢀRꢀθJAꢀisꢀtheꢀsumꢀofꢀtheꢀthermalꢀimpedanceꢀfromꢀjunctionꢀtoꢀcaseꢀRꢀθJCꢀandꢀcaseꢀtoꢀambient.
E.ꢀTheꢀstaticꢀcharacteristicsꢀinꢀFiguresꢀ1ꢀtoꢀ6ꢀareꢀobtainedꢀusingꢀ<300µꢀsꢀpulses,ꢀdutyꢀcycleꢀ0.5%ꢀmax.
F.ꢀTheseꢀcurvesꢀareꢀbasedꢀonꢀtheꢀjunctionꢁtoꢁcaseꢀthermalꢀimpedanceꢀwhichꢀisꢀmeasuredꢀwithꢀtheꢀdeviceꢀmountedꢀtoꢀaꢀlargeꢀheatsink,ꢀassumingꢀa
maximumꢀjunctionꢀtemperatureꢀofꢀTJ(MAX)=150°C.ꢀTheꢀSOAꢀcurveꢀprovidesꢀaꢀsingleꢀpulseꢀrating.
G.ꢀL=60mH,ꢀIAS=3.4A,ꢀVDD=150V,ꢀRG=25Ω,ꢀStartingꢀT =25°C
J
THISꢀPRODUCTꢀHASꢀBEENꢀDESIGNEDꢀANDꢀQUALIFIEDꢀFORꢀTHEꢀCONSUMERꢀMARKET.ꢀAPPLICATIONSꢀORꢀUSESꢀASꢀCRITICALꢀ
COMPONENTSꢀINꢀLIFEꢀSUPPORTꢀDEVICESꢀORꢀSYSTEMSꢀAREꢀNOTꢀAUTHORIZED.ꢀAOSꢀDOESꢀNOTꢀASSUMEꢀANYꢀLIABILITYꢀARISING
OUTꢀOFꢀSUCHꢀAPPLICATIONSꢀORꢀUSESꢀOFꢀITSꢀPRODUCTS.ꢀꢀAOSꢀRESERVESꢀTHEꢀRIGHTꢀTOꢀIMPROVEꢀPRODUCTꢀDESIGN,
FUNCTIONSꢀANDꢀRELIABILITYꢀWITHOUTꢀNOTICE.
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀRev3:ꢀMarchꢀ2011ꢀ
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AOT10N65/AOTF10N65
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
18
15
12
9
10V
ꢁ55°C
VDS=40V
125°C
6.5V
6V
10
1
VGS=5.5V
6
25°C
3
0.1
0
2
4
6
8
10
0
5
10
15
DS (Volts)
20
25
30
V
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
3
1.6
1.4
1.2
1.0
0.8
0.6
0.4
2.5
2
VGS=10V
VGS=10V
ID=5A
1.5
1
0.5
0
0
4
8
12
16
20
ꢁ100
ꢁ50
0
50
100
150
200
I
D (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1.1
1
1.0E+02
1.0E+01
1.0E+00
1.0Eꢁ01
1.0Eꢁ02
125°C
25°C
1.0Eꢁ03
1.0Eꢁ04
1.0Eꢁ05
0.9
0.8
ꢁ100
ꢁ50
0
50
100
150
200
0.0
0.2
0.4
0.6
0.8
1.0
TJ (oC)
V
SD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Figure 5: Break Down vs. Junction Temperature
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀRev3:ꢀMarchꢀ2011ꢀ
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AOT10N65/AOTF10N65
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
1000
100
10
15
12
9
Ciss
VDS=520V
ID=10A
Coss
6
3
Crss
1
0
0.1
1
10
100
0
5
10
15
20
25
30
35
40
VDS (Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100
100
10
10µs
10µs
RDS(ON)
limited
100µs
10
1
RDS(ON)
limited
1ms
100µs
10ms
0.1s
1ms
1
10ms
1s
DC
DC
0.1
0.01
0.1
0.01
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
1
10
100
1000
1
10
100
1000
VDS (Volts)
V
DS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF10N65 (Note F)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT10N65 (Note F)
12
10
8
6
4
2
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 11: Current De-rating (Note B)
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀRev3:ꢀMarchꢀ2011ꢀ
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AOT10N65/AOTF10N65
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
Inꢀdescendingꢀorder
D=0.5,ꢀ0.3,ꢀ0.1,ꢀ0.05,ꢀ0.02,ꢀ0.01,ꢀsingleꢀpulse
TJ,PK=Tc+PDM.ZθJC.RθJC
RθJC=0.5°C/W
1
0.1
PD
Ton
0.01
0.001
T
1
SingleꢀPulse
0.001
0.00001
0.0001
0.01
0.1
10
100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT10N65 (Note F)
10
1
D=Ton/T
Inꢀdescendingꢀorder
D=0.5,ꢀ0.3,ꢀ0.1,ꢀ0.05,ꢀ0.02,ꢀ0.01,ꢀsingleꢀpulse
TJ,PK=Tc+PDM.ZθJC.RθJC
RθJC=2.5°C/W
0.1
PD
0.01
0.001
Ton
T
SingleꢀPulse
0.001
0.00001
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF10N65 (Note F)
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AOT10N65/AOTF10N65
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
GateꢀChargeꢀTestꢀCircuitꢀ&ꢀWaveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
ꢁ
ꢁ
DUT
Vgs
Vds
Ig
Charge
ResistiveꢀSwitchingꢀTestꢀCircuitꢀ&ꢀWaveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
ꢁ
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
UnclampedꢀInductiveꢀSwitchingꢀ(UIS)ꢀTestꢀCircuitꢀ&ꢀWaveforms
L
2
Eꢀꢀꢀ=ꢀ1/2ꢀLI
AR
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
ꢁ
DUT
Vgs
Vgs
DiodeꢀRecoveryꢀTestꢀCircuitꢀ&ꢀWaveforms
Qꢀꢀꢀ=ꢀꢁꢀꢀꢀIdt
Vdsꢀ+
Vdsꢀꢁ
Ig
rr
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
ꢁ
Vds
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀRev3:ꢀMarchꢀ2011ꢀ
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