AOTF16N50 [AOS]
500V, 16A N-Channel MOSFET; 500V ， 16A N沟道MOSFET
| 型号： | AOTF16N50 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 500V, 16A N-Channel MOSFET |
| 文件： | 总6页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT16N50/AOTF16N50
500V, 16A N-Channel MOSFET
General Description
Product Summary
VDS
600V@150℃
16A
The AOT16N50 & AOTF16N50 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
ID (at VGS=10V)
R
DS(ON) (at VGS=10V)
< 0.37Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT16N50L & AOTF16N50L
Top View
TO-220F
TO-220
D
G
G
G
D
D
S
S
S
AOT16N50
AOTF16N50
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
AOT16N50
AOTF16N50
Units
Drain-Source Voltage
Gate-Source Voltage
500
±30
V
V
VGS
TC=25°C
16
11
16*
11*
Continuous Drain
Current
ID
TC=100°C
A
Pulsed Drain Current C
IDM
64
6
Avalanche Current C
IAR
A
Repetitive avalanche energy C
EAR
EAS
dv/dt
540
1080
5
mJ
Single plused avalanche energy G
Peak diode recovery dv/dt
TC=25°C
mJ
V/ns
W
W/ oC
278
2.2
50.0
0.4
PD
Power Dissipation B
Derate above 25oC
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
°C
°C
Parameter
Symbol
RθJA
AOT16N50
AOTF16N50
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A,D
65
0.5
65
--
Maximum Case-to-sink A
RθCS
Maximum Junction-to-Case
RθJC
0.45
2.5
* Drain current limited by maximum junction temperature.
Rev3: Jul 2011
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Page 1 of 6
AOT16N50/AOTF16N50
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250ꢀA, VGS=0V, TJ=25°C
ID=250ꢀA, VGS=0V, TJ=150°C
500
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
600
0.5
V
BVDSS
/∆TJ
V/ oC
ID=250ꢀA, VGS=0V
VDS=500V, VGS=0V
VDS=400V, TJ=125°C
1
IDSS
µA
10
IGSS
VGS(th)
RDS(ON)
gFS
VDS=0V, VGS=±30V
Gate-Body leakage current
Gate Threshold Voltage
±100
4.5
nΑ
V
VDS=5V, ID=250µA
VGS=10V, ID=8A
VDS=40V, ID=8A
IS=1A,VGS=0V
3.3
4
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
0.29
20
0.37
Ω
S
VSD
0.71
1
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
16
64
A
ISM
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1531 1914 2297
pF
pF
pF
Ω
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
153
11
191
16
229
20
1.75
3.5
5.3
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
34
7.5
16
42.8
9.3
20.3
44
51
11
24
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=400V, ID=16A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
VGS=10V, VDS=250V, ID=16A,
Turn-On Rise Time
84
RG=25Ω
tD(off)
tf
Turn-Off DelayTime
92
Turn-Off Fall Time
50
trr
IF=16A,dI/dt=100A/µs,VDS=100V
IF=16A,dI/dt=100A/µs,VDS=100V
265
4.5
334
6
400
7.5
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=6A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev3: Jul 2011
www.aosmd.com
Page 2 of 6
AOT16N50/AOTF16N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
32
100
10V
-55°C
28
VDS=40V
125°C
6.5V
24
10
20
16
6V
12
VGS=5.5V
1
8
4
25°C
0
0.1
0
5
10
15
20
25
30
2
4
6
8
10
V
DS (Volts)
V
GS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
0.7
3
2.5
2
0.6
0.5
0.4
0.3
0.2
VGS=10V
ID=8A
VGS=10V
1.5
1
0.5
0
0
4
8
12
16
20
24
28
32
-100
-50
0
50
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
150
200
I
D (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1.1
1
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
0.9
0.8
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
-100
-50
0
50
100
150
200
TJ (°C)
Figure 5:Break Down vs. Junction Temparature
Rev3: Jul 2011
www.aosmd.com
Page 3 of 6
AOT16N50/AOTF16N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
1000
100
10
VDS=400V
ID=16A
Ciss
Coss
6
Crss
3
0
1
0
10
20
30
40
50
60
0.1
1
10
100
VDS (Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100
10
100
10
10µs
10µs
RDS(ON)
limited
RDS(ON)
limited
100µs
100µs
1ms
1ms
10ms
0.1s
1s
1
1
10ms
0.1s
DC
DC
TJ(Max)=150°C
TC=25°C
0.1
0.01
0.1
0.01
10s
TJ(Max)=150°C
TC=25°C
1
10
100
1000
1
10
100
1000
V
DS (Volts)
V
DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT16N50 (Note F)
Figure 10: Maximum Forward Biased Safe Operating
Area for AOTF16N50 (Note F)
18
15
12
9
6
3
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 11: Current De-rating (Note B)
Rev3: Jul 2011
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Page 4 of 6
AOT16N50/AOTF16N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.45°C/W
1
0.1
PD
Ton
0.01
0.001
T
1
Single Pulse
0.001
0.00001
0.0001
0.01
0.1
10
100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT16N50 (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
0.1
PD
0.01
0.001
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF16N50 (Note F)
Rev3: Jul 2011
www.aosmd.com
Page 5 of 6
AOT16N50/AOTF16N50
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR=1/2 LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTestCircuit &Waveforms
Qrr=- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Rev3: Jul 2011
www.aosmd.com
Page 6 of 6
相关型号：
AOTF20S60L
Power Field-Effect Transistor, 20A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
AOS
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