AOTF20C60P [AOS]
600V,20A N-Channel MOSFET;
| 型号： | AOTF20C60P |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 600V,20A N-Channel MOSFET |
| 文件： | 总6页 (文件大小：462K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOTF20C60P
600V,20A N-Channel MOSFET
General Description
Product Summary
• Trench Power AlphaMOS-II technology
• Low RDS(ON)
• Low Ciss and Crss
VDS @ Tj,max
IDM
700V
80A
RDS(ON),max
Qg,typ
< 0.25Ω
52nC
8.2µJ
• High Current Capability
Eoss @ 400V
Applications
100% UIS Tested
100% Rg Tested
• General Lighting for LED and CCFL
• AC/DC Power supplies for Industrial, Consumer, and
Telecom
D
TO-220F
S
G
D
G
S
AOTF20C60P
Orderable Part Number
AOTF20C60P
Package Type
TO-220F Pb Free
Form
Tube
Minimum Order Quantity
1000
AOTF20C60PL
TO-220F Green
Tube
1000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
AOTF20C60P
AOTF20C60PL
Units
Drain-Source Voltage
Gate-Source Voltage
600
±30
V
V
VGS
TC=25°C
20*
16*
20*
16*
Continuous Drain
Current
ID
TC=100°C
A
Pulsed Drain Current C
IDM
IAR
80
20
Avalanche Current C L=1mH
Repetitive avalanche energy C
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
TC=25°C
A
EAR
EAS
200
mJ
mJ
1599
100
20
dv/dt
V/ns
W
W/°C
°C
50
45
PD
Power Dissipation B
Derate above 25°C
0.4
0.35
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
300
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TL
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Maximum Junction-to-Case
Symbol
RθJA
AOTF20C60P
AOTF20C60PL
Units
°C/W
°C/W
65
65
RθJC
2.5
2.8
* Drain current limited by maximum junction temperature.
Rev.1.0: November 2014
www.aosmd.com
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
600
BVDSS
Drain-Source Breakdown Voltage
V
700
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
V/ oC
ID=250µA, VGS=0V
0.54
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
VDS=0V, VGS=±30V
VDS=5V, ID=250µA
VGS=10V, ID=10A
VDS=40V, ID=10A
IS=1A,VGS=0V
1
10
IDSS
Zero Gate Voltage Drain Current
µA
IGSS
VGS(th)
RDS(ON)
gFS
Gate-Body leakage current
Gate Threshold Voltage
±100
5
nA
V
3
3.8
0.215
20
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
0.25
Ω
S
VSD
0.7
1
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current C
20
80
A
ISM
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
3607
140
pF
pF
VGS=0V, VDS=100V, f=1MHz
Coss
Effective output capacitance, energy
related H
Co(er)
Co(tr)
95
pF
pF
VGS=0V, VDS=0 to 480V, f=1MHz
Effective output capacitance, time
related I
182
VGS=0V, VDS=100V, f=1MHz
f=1MHz
Crss
Rg
Reverse Transfer Capacitance
Gate resistance
3.3
2
pF
Ω
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
52
20
80
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=480V, ID=20A
Gate Source Charge
Gate Drain Charge
14
Turn-On DelayTime
77
VGS=10V, VDS=300V, ID=20A,
Turn-On Rise Time
67
RG=25Ω
tD(off)
tf
Turn-Off DelayTime
120
43
Turn-Off Fall Time
trr
IF=20A,dI/dt=100A/µs,VDS=100V
IF=20A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
599
11
ns
Qrr
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=7.3A, VDD=150V, RG=25Ω, Starting TJ=25°C.
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: November 2014
www.aosmd.com
Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10
1
50
VDS=40V
10V
40
7V
30
-55°C
25°C
6.5V
125°C
6V
20
VGS=5.5V
10
0
0.1
0
5
10
15
20
25
30
2
4
6
8
10
VDS (Volts)
Figure 1: On-Region Characteristics
VGS(Volts)
Figure 2: Transfer Characteristics
3
0.5
0.4
0.3
0.2
0.1
0
2.5
2
VGS=10V
ID=10A
VGS=10V
1.5
1
0.5
0
-100
-50
0
50
100
150
200
0
10
20
30
40
50
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1E+02
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1.3
1.2
1.1
1
125°C
0.9
0.8
0.7
25°C
-100
-50
0
50
100
150
200
0.0
0.2
0.4
0.6
0.8
1.0
TJ (°C)
VSD (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: Break Down vs. Junction Temperature
Rev.1.0: November 2014
www.aosmd.com
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
Ciss
VDS=480V
ID=20A
1000
100
10
Coss
6
Crss
3
0
1
0
15
30
45
60
75
90
0.1
1
10
100
1000
Qg (nC)
VDS (Volts)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
25
20
16
12
8
20
15
10
5
Eoss
4
0
0
0
100
200
300
400
500
600
0
25
50
75
100
125
150
VDS (Volts)
Figure 9: Coss stored Energy
TCASE (°C)
Figure 10: Current De-rating (Note F)
100
10
100
10
10µs
100µs
1ms
RDS(ON)
limited
RDS(ON)
limited
10µs
100µs
1ms
1
1
10ms
0.1s
1s
10ms
DC
DC
0.1s
1s
0.1
0.01
0.1
0.01
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
1
10
100
1000
1
10
100
1000
VDS(Volts)
VDS(Volts)
Figure 11: Maximum Forward Biased Safe Operating
Area for TO-220F Pb Free (Note F)
Figure 12: Maximum Forward Biased Safe Operating
Area for TO-220F Green (Note F)
Rev.1.0: November 2014
www.aosmd.com
Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
R
θJC=2.5°C/W
1
0.1
PDM
0.01
0.001
Single Pulse
Ton
T
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for TO-220F Pb Free (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
θJC=2.8°C/W
R
0.1
PDM
0.01
0.001
Single Pulse
0.001
Ton
T
1E-05
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for TO-220F Green (Note F)
Rev.1.0: November 2014
www.aosmd.com
Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
IF
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev.1.0: November 2014
www.aosmd.com
Page 6 of 6
相关型号：
AOTF20S60L
Power Field-Effect Transistor, 20A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
AOS
©2020 ICPDF网 联系我们和版权申明