AOTF20C60 [AOS]
Plastic Encapsulated Device; 塑料封装的器件
| 型号： | AOTF20C60 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Plastic Encapsulated Device |
| 文件： | 总3页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOS Semiconductor
Product Reliability Report
AOTF20C60, rev A
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
www.aosmd.com
1
This AOS product reliability report summarizes the qualification result for AOTF20C60.
Accelerated environmental tests are performed on a specific sample size, and then followed by
electrical test at end point. Review of final electrical test result confirms that AOTF20C60 passes
AOS quality and reliability requirements.
Table of Contents:
I.
Product Description
II.
Package and Die information
Environmental Stress Test Summary and Result
Reliability Evaluation
III.
IV.
V.
Appendix: Test data
I. Product Description:
The AOTF20C60 is fabricated using an advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in popular AC-DC applications. By providing
low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be
adopted quickly into new and existing offline power supply designs.
For Halogen Free add "L" suffix to part number:
AOTF20C60L
Details refer to the datasheet.
II. Die / Package Information:
AOTF20C60
Process
Standard sub-micron
600V N-Channel MOSFET
TO220F
Bare Cu
Soft solder
Package Type
Lead Frame
Die Attach
Bonding
Al wire
Mold Material
Moisture Level
Epoxy resin with silica filler
Up to Level 1 *
Note * based on info provided by assembler and mold compound supplier
2
III. Result of Reliability Stress for AOTF20C60
Test Item
Test Condition Time
Point
Lot
Attribution
Total
Sample size of
Failures
Number
Reference
Standard
12 lots
2112pcs
0
0
0
0
JESD22-
A113
MSL
Precondition
-
168hr 85°c
/85%RH +3 cycle
reflow@250°c
168hrs
500 hrs
1000 hrs
539pcs
JESD22-
A108
HTGB
HTRB
HAST
Temp = 150°c ,
Vgs=100% of
Vgsmax
3 lots
4 lots
77 pcs / lot
539pcs
168hrs
500 hrs
1000 hrs
JESD22-
A108
Temp = 150°c ,
Vds=80% of
Vdsmax
3 lots
4 lots
77 pcs / lot
495pcs
96 hrs
9 lots
JESD22-
A110
130°c , 85%RH,
33.3 psi, Vgs =
100% of Vgs max
(Note A*)
9 lots
55 pcs / lot
693pcs
96 hrs
0
0
JESD22-
A102
Pressure Pot
121°c , 29.7psi,
RH=100%
(Note A*)
12 lots
77 pcs / lot
924pcs
250 / 500
cycles
JESD22-
A104
Temperature
Cycle
-65°c to 150°c ,
air to air,
(Note A*)
77 pcs / lot
IV. Reliability Evaluation
FIT rate (per billion): 4.16
MTTF = 27426 years
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size of the selected product (AOTF20C60). Failure Rate Determination is based on
JEDEC Standard JESD 85. FIT means one failure per billion hours.
Failure Rate (FIT) = Chi2 x 109 / [2 (N) (H) (Af)]
= 1.84 x 109 / [2x (6x77x500 +8x77x1000) x259] = 4.16
MTTF = 109 / FIT = 2.40 x 108hrs = 27426 years
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C )
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
55 deg C
70 deg C
85 deg C
32
100 deg C
13
115 deg C
5.64
130 deg C
2.59
150 deg C
1
Af
259
87
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 x 10-5eV / K
3
相关型号：
AOTF20S60L
Power Field-Effect Transistor, 20A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
AOS
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