AOTF20N40 [FREESCALE]
400V,20A N-Channel MOSFET; 400V ， 20A N沟道MOSFET
| 型号： | AOTF20N40 |
| 厂家： | 
Freescale |
| 描述： | 400V,20A N-Channel MOSFET |
| 文件： | 总6页 (文件大小：409K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOTF20N40
400V,20A N-Channel MOSFET
General Description
The AOTF20N40 is fabricated using an advanced high
levels of performance and robustness in popular AC-DC
with guaranteed avalanche capability this parts can be
designs.
voltage MOSFET process that is designed to deliver high
applications.By providing low RDS(on), Ciss and Crss along
adopted quickly into new and existing offline power supply
Features
VDS
500@150℃
20A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 0.25Ω
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOTF20N40
AOTF20N40L
Units
Drain-Source Voltage
VDS
400
±30
V
Gate-Source Voltage
VGS
V
A
TC=25°C
20*
13*
20*
13*
Continuous Drain
Current
ID
TC=100°C
Pulsed Drain Current C
IDM
54
6
Avalanche Current C
IAR
A
Repetitive avalanche energy C
EAR
EAS
dv/dt
540
1080
5
mJ
Single pulsed avalanche energy G
Peak diode recovery dv/dt
TC=25°C
mJ
V/ns
W
50
40
PD
Power Dissipation B
Derate above 25oC
W/ oC
0.4
0.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
300
°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TL
°C
Parameter
Symbol
RθJA
AOTF20N40
AOTF20N40L
Units
°C/W
°C/W
Maximum Junction-to-Ambient A,D
65
65
Maximum Junction-to-Case
RθJC
2.5
3.1
* Drain current limited by maximum junction temperature.
1/6
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AOTF20N40
400V,20A N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250ꢀA, VGS=0V, TJ=25°C
ID=250ꢀA, VGS=0V, TJ=150°C
400
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
500
0.4
V
BVDSS
/∆TJ
V/ oC
ID=250ꢀA, VGS=0V
VDS=400V, VGS=0V
1
IDSS
µA
10
VDS=320V, TJ=125°C
VDS=0V, VGS=±30V
VDS=5V, ID=250µA
IGSS
VGS(th)
RDS(ON)
gFS
Gate-Body leakage current
Gate Threshold Voltage
±100
4.3
nΑ
V
3.0
3.7
0.2
20
VGS=10V, ID=10A
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
0.25
Ω
S
VDS=40V, ID=10A
IS=1A,VGS=0V
VSD
0.7
1
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
20
54
A
ISM
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1510 1898 2290
pF
pF
pF
Ω
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
145
9
212
15
3
290
21
1.5
4.5
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
28
37
12
45
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=320V, ID=20A
Gate Source Charge
Gate Drain Charge
12
Turn-On DelayTime
44
VGS=10V, VDS=200V, ID=20A,
Turn-On Rise Time
87
RG=25Ω
tD(off)
tf
Turn-Off DelayTime
96
Turn-Off Fall Time
59
trr
IF=20A,dI/dt=100A/µs,VDS=100V
IF=20A,dI/dt=100A/µs,VDS=100V
220
3
285
3.9
345
4.8
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=6A, VDD=150V, RG=25Ω, Starting TJ=25°C
2/6
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AOTF20N40
400V,20A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10
1
50
40
30
20
10
0
-55°C
10V
VDS=40V
6.5V
6V
125°C
5.5V
25°C
VGS=5V
0.1
0
5
10
15
VDS (Volts)
20
25
30
2
4
6
8
10
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
3
2.5
2
1.0
0.8
0.6
0.4
0.2
0.0
VGS=10V
ID=10A
VGS=10V
1.5
1
0.5
0
0
8
16
24
32
40
-100
-50
0
50
100
150
200
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
Figure 4: On-Resistance vs. Junction Temperature
1.2
1.1
1
1E+02
1E+01
1E+00
125°C
1E-01
1E-02
1E-03
1E-04
25°C
0.9
0.8
-100
-50
0
50
100
150
200
0.0
0.2
0.4
0.6
0.8
1.0
TJ (°C)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Figure 5:Break Down vs. Junction Temparature
3/6
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AOTF20N40
400V,20A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
1000
100
10
Ciss
VDS=320V
ID=20A
Coss
Crss
6
3
1
0
0.1
1
10
100
0
10
20
30
40
50
60
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
10
100
10
10µs
10µs
RDS(ON)
limited
RDS(ON)
limited
100µs
100µs
1ms
1ms
1
1
10ms
0.1s
10ms
0.1s
1s
DC
DC
1s
0.1
0.01
0.1
0.01
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
1
10
100
1000
1
10
100
1000
DS
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOTF20N40 (Note F)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF20N40L (Note F)
25
20
15
10
5
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 11: Current De-rating (Note B)
4/6
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AOTF20N40
400V,20A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=2.5°C/W
1
0.1
PD
0.01
0.001
Ton
Single Pulse
0.001
T
0.00001
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOTF20N40 (Note F)
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
θJC=3.1°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
1
0.1
PD
0.01
0.001
Ton
Single Pulse
0.001
T
0.00001
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF20N40L (Note F)
5/6
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AOTF20N40
400V,20A N-Channel MOSFET
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit& Waveforms
L
2
EAR=1/2LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit &Waveforms
Qrr =- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
6/6
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